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SBL845

SBL845

  • 厂商:

    SIRECTIFIER

  • 封装:

  • 描述:

    SBL845 - Low VF Schottky Barrier Rectifiers - Sirectifier Semiconductors

  • 数据手册
  • 价格&库存
SBL845 数据手册
SBL830 thru SBL845 Low VF Schottky Barrier Rectifiers Dimensions TO-220AC A C(TAB) A C C Dim. A B C D E F G H J K L M N Q A=Anode, C=Cathode, TAB=Cathode VRRM V 30 35 40 45 VRMS V 21 24.5 28 31.5 VDC V 30 35 40 45 SBL830 SBL835 SBL840 SBL845 Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39 Symbol I(AV) IFSM VF IR CJ ROJC TJ TSTG Characteristics Maximum Average Forward Rectified Current @TC=95oC Maximum Ratings 8 200 0.55 @TJ=25 C @TJ=100oC o Unit A A V mA pF o Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) Maximum Forward Voltage At 8.0A DC (Note 1) Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Junction Capacitance (Note 2) Typical Thermal Resistance (Note 3) Operating Temperature Range Storage Temperature Range 0.5 50 450 3.0 -55 to +125 -55 to +150 C/W o o C C NOTES: 1. 300us Pulse Width, 2% Duty Cycle. 2. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. 3. Thermal Resistance Junction To Case. FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applications MECHANICAL DATA * Case: TO-220AC molded plastic * Polarity: As marked on the body * Weight: 0.08 ounces, 2.24 grams * Mounting position: Any SBL830 thru SBL845 Low VF Schottky Barrier Rectifiers 10 PEAK FORW ARD SURGE CURRENT , AMPERES FIG.1 - FORW ARD CURRENT DERATING CURVE AVERAGE FORW ARD CURRENT AMPERES FIG.2 - MAXIMUM NON-REPET ITIVE SURGE CURRENT 300 250 200 150 100 50 0 1 2 5 10 20 50 100 8 6 4 RESISTIVE OR INDUCTIVE LOAD 2 8.3ms Single Half-Sine-W ave (JEDEC METHOD) 0 25 50 75 100 125 150 175 CASE TEMPERATURE , C NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL REVERSE CHARACTERIST ICS 1000 FIG.4 - TYPICAL FORW ARD CHARACTERISTICS 100 INSTANTANEOUS FORW ARD CURRENT ,(A) INSTANTANEOUS REVERSE CURRENT ,(mA) 100 10 10 TJ = 100 C TJ = 75 C 1.0 1.0 0.1 TJ = 25 C TJ = 25 C PULSE W IDTH 300ua s 2% Duty cycle 0.01 0 20 40 60 80 100 120 140 0.1 0.1 0.2 0.3 0.4 0.5 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 0.6 0.7 0.8 0.9 1.0 INSTANTANEOUS FORW ARD VOLTAGE , VOLTS FIG.5 - TYPICAL JUNCTION CAPACITANCE 10000 CAPACIT ANCE , (pF) 1000 TJ = 25 C, f= 1MHz 100 0.1 1 4 10 100 REVERSE VO LTAGE , VO LTS
SBL845 价格&库存

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