NGA-186

Preliminary Preliminary Product Description Sirenza Microdevices’ NGA-186 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for broadband performance up to 6 Ghz. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Small Signal Gain vs. Frequency NGA-186 DC-6000 MHz, Cascadable GaAs HBT MMIC Amplifier 25 20 15 dB Product Features • 12.0dB Gain, 14.7 dBm P1dB at 1950Mhz • Cascadable 50 ohm: 1.2:1 VSWR • Patented GaAs HBT Technology • Operates from Single Supply • Low Thermal Resistance Package • Unconditionally Stable Applications • PA Driver Amplifier • Cellular, PCS, GSM, UMTS • IF Amplifier • Wireless Data, Satellite U nits dB m Frequency 850 MHz 1950 MHz 2400 MHz 850 MHz 1950 MHz 2400 MHz 850 MHz 1950 MHz 2400 MHz D C - 5000 MHz D C - 5000 MHz 2000 MHz 3.6 45 11.2 Min. Ty p. 14.6 14.7 14.9 32.9 31.7 31.1 12.4 12.0 11.8 5600 1.2:1 1.2:1 4.0 4.1 50 120 4.6 55 13.6 Max. 10 5 0 0 1 2 3 4 5 6 7 8 Frequency GHz S y mbol P 1dB P arameter Output P ower at 1dB C ompressi on OIP 3 Output Thi rd Order Intercept P oi nt dB m G S mall S i gnal Gai n dB MHz dB V mA °C /W B andwi dth D etermi ned by Return Loss (