SGA-0363

Preliminary SGA-0363 Product Description The SGA-0363 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only 2 DC-blocking capacitors, a bias resistor and an optional RF choke are required for operation. The matte tin finish on Sirenza’s lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. This package is also manufactured with green molding compounds that contain no antimony trioxide nor halogenated fire retardants. Small Signal Gain vs. Frequency 25 20 15 SGA-0363Z Pb RoHS Compliant & Green Package Preliminary DC-5000 MHz, Silicon Germanium Cascadeable Gain Block Product Features • Now available in Lead Free, RoHS Compliant, & Green Packaging • DC-5000 MHz Operation • Single Voltage Supply • Low Current Draw: 11mA at 2.5V typ. • High Output Intercept: 14 dBm typ. at 1950MHz Applications • • • • PA Driver Amplifier Cellular, PCS, GSM, UMTS IF Amplifier Wireless Data, Satellite Units dBm dBm dBm dBm dBm dBm dB dB dB MHz DC - 4500MHz DC - 4500MHz 850 MHz 1950 MHz 2400 MHz 1950 MHz dB dB dB dB V mA ºC/W 9 dB 10 5 0 0 1 2 3 4 5 6 Frequency GHz Symbol P1dB Parameter Output Pow er at 1dB Compression Frequency 850 MHz 1950 MHz 2400 MHz 850 MHz 1950 MHz 2400 MHz 850 MHz 1950 MHz 2400 MHz Min. Typ. 2.3 2.3 1.6 14.2 14.0 13.1 19.6 17.2 16.2 5000 1.8:1 1.7:1 24.0 22.8 22.1 3.0 2.5 11 255 Max. IP3 Third Order Intercept Point S21 BW3dB VSWRIN VSWROUT S12 NF VD ID RTH, j-l Small Signal Gain 3dB Bandw idth Input VSWR Output VSWR Reverse Isolation Noise Figure Device Operating Voltage Device Operating Current Thermal Resistance (junction - lead) 13 Test Conditions: VS = 5 V RBIAS = 220 Ohms ID = 11 mA Typ. TL = 25ºC OIP3 Tone Spacing = 1 MHz, Pout per tone = -12 dBm ZS = ZL = 50 Ohms The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights reserved. 303 Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-101495 Rev D Preliminary Preliminary SGA-0363 DC-5.0 GHz 2.5V SiGe Amplifier Key parameters, at typical operating frequencies: Parameter 100 MHz Gain Output IP3 Output P1dB Input Return Loss Reverse Isolation Noise Figure 500 MHz Gain Output IP3 Output P1dB Input Return Loss Reverse Isolation Noise Figure 850 MHz Gain Output IP3 Output P1dB Input Return Loss Reverse Isolation Noise Figure 1950 MHz Gain Output IP3 Output P1dB Input Return Loss Reverse Isolation Noise Figure 2400 MHz Gain Output IP3 Output P1dB Input Return Loss Reverse Isolation 3500 MHz Gain Output IP3 Output P1dB Input Return Loss Reverse Isolation Typical 25ºC Test Condition Unit dB dBm dBm dB dB dB dB dBm dBm dB dB dB dB dBm dBm dB dB dB dB dBm dBm dB dB dB dB dBm dBm dB dB dB dBm dBm dB dB (ID = 11mA, unless otherwise noted) 20.4 14.8 3.2 9.3 23.9 2.9 20.0 14.5 2.9 9.4 23.9 2.8 19.6 14.2 2.3 9.4 24.0 3.0 17.2 14.0 2.3 10.4 22.8 3.0 16.2 13.1 1.6 10.8 22.1 13.8 11.5 0.8 11.3 20.1 Tone spacing = 1 MHz, Pout per tone = -12dBm Zs = 50 Ohms Tone spacing = 1 MHz, Pout per tone = -12dBm Zs = 50 Ohms Tone spacing = 1 MHz, Pout per tone = -12dBm Zs = 50 Ohms Tone spacing = 1 MHz, Pout per tone = -12dBm Zs = 50 Ohms Tone spacing = 1 MHz, Pout per tone = -12dBm Tone spacing = 1 MHz, Pout per tone = -12dBm Absolute Maximum Ratings Parameter Max. Device Current (ID) Max. Device Voltage (VD) Max. RF Input Power Max. Junction Temp. (TJ) Operating Temp. Range (TL) Absolute Limit 22 mA 6V -5 dBm +150°C -40°C to +85°C +150°C Max. Storage Temp. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias conditions should also satisfy the following expression: IDVD < (TJ - TL) / RTH, j-l 303 Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-101495 Rev D Preliminary Preliminary SGA-0363 DC-5.0 GHz 2.5V SiGe Amplifier 30 S21 vs. Temperature, ID = 11mA 25C -40C 85C 0 S12 vs. Temperature, ID = 11mA 25C -40C 85C 20 -10 dB 10 dB -20 0 0 1 2 3 4 5 6 -30 0 1 2 3 4 5 6 GHz GHz 0 -5 S11 vs. Temperature, ID = 11mA 25C -40C 85C 0 -5 S22 vs. Temperature, ID = 11mA 25C -40C 85C dB -10 -15 -20 0 1 2 3 4 5 6 dB -10 -15 -20 0 1 2 3 4 5 6 GHz GHz 20 IP3 vs. Temperature, ID = 11mA 4 P1dB vs. Temperature, ID = 11mA 15 2 dBm 10 25C -40C 85C 0 1 2 3 4 dBm 0 25C -40C 85C 0 1 2 3 4 5 -2 0 -4 GHz GHz 303 Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-101495 Rev D Preliminary Preliminary SGA-0363 DC-5.0 GHz 2.5V SiGe Amplifier Basic Application Circuit R BIAS Application Circuit Element Values Frequency (Mhz) Reference Designator 500 850 1950 2400 3500 VS 1 uF 1000 pF CD LC 1,2 CB CD LC 220 pF 100 pF 68 nH 100 pF 68 pF 33 nH 68 pF 22 pF 22 nH 56 pF 22 pF 18 nH 39 pF 15 pF 15 nH RF in CB 3 SGA-0363 6 4,5 CB RF out Recommended Bias Resistor Values for ID=11mA RBIAS=( VS-VD ) / ID Supply Voltage(VS) RBIAS 5V 220 7.5 V 470 9V 620 12 V 910 VS RBIAS 1 uF 1000 pF Note: RBIAS provides DC bias stability over temperature. CD LC G47 Mounting Instructions 1. Use a large ground pad area near device pins 1, 2, CB CB 4, and 5 with many plated through-holes as shown. 2. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 31 mil thick FR-4 board with 1 ounce copper on both sides. Part Identification Marking Pin # 3 Function RF IN Description RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possible. 654 654 1, 2, 4, 5 GND G47 G47 123 G47Z 6 123 RF OUT/ RF output and bias pin. DC voltage is BIAS present on this pin, therefore a DC blocking capacitor is necessary for proper operation. Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. G47 Part Number Reel Size Devices/Reel Part Number Ordering Information SGA-0363 SGA-0363Z 7" 7" 3000 3000 303 Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 4 http://www.sirenza.com EDS-101495 Rev D Preliminary Preliminary SGA-0363 DC-5.0 GHz 2.5V SiGe Amplifier SOT-363 PCB Pad Layout Dimensions in inches [millimeters] RF OUT RF IN Notes: 1. Provide a large ground pad area under device pins 1, 2, 4, & 5 with many plated via holes as shown. 2. Dimensions given for 50 Ohm RF I/O lines are for 31 mil thick Getek. Scale accordingly for different board thicknesses and dielectric contants. 3. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 31 mil thick Getek with 1 ounce copper on both sides. SOT-363 Nominal Package Dimensions Dimensions in inches [millimeters] A link to the SOT-363 package outline drawing with full dimensions and tolerances may be found on the product web page at www.sirenza.com. 303 Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 5 http://www.sirenza.com EDS-101495 Rev D