SZM-2166Z-EVB2

Preliminary Product Description Sirenza Microdevices’ SZM-2166Z is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for 802.16 customer premise equipment (CPE) terminals in the 2.3-2.7 GHz bands. It can run from a 3V to 6V supply. The external output match and bias adjustability allows load line optimization for other applications or over narrower bands. It features an output power detector, on/off power control and high RF overdrive robustness. A 20dB step attenuator feature can be utilized by switching the second stage Power up/down control. This product features a RoHS compliant and Green package with matte tin finish, designated by the ‘Z’ suffix. SZM-2166Z 2.3-2.7GHz 2W Power Amplifier Pb RoHS Compliant & Green Package 6mm x 6mm QFN Package Functional Block Diagram Vcc = 5V RFIN RFOUT • • • • • • • • • Product Features P1dB = 35dBm @ 6V Three Stages of Gain: 37dB 802.11g 54Mb/s Class AB Performance Pout = 27dBm @ 2.5% EVM, Vcc 6V, 878mA Active Bias with Adjustable Current On-chip Output Power Detector Low Thermal Resistance Power up/down control < 1μs Attenuator step 20dB @ Vpc2 = 0V Vbias = 5V Stage 1 Bias Stage 2 Bias Stage 3 Bias Applications P ower Up/Dow n Control P ower Detector • • • 802.16 WiMAX Driver or Output Stage 802.11b/g WLAN, WiFi CPE Terminal Applications Unit MHz dBm dB % dBc dB dB V mA mA µA ºC/W 12 615 10 13 34.5 Min. 2300 35 36 2.5 -40 8.3 14 17 0.9 to 1.8 724 4 100 832 -35 Typ. Max. 2700 Key Specifications Symbol fO P1dB S21 EVM% IM3 NF IRL ORL Vdet Range Icq IVPC Ileak Rth, j-l Parameters: Test Conditions, 2.5-2.7GHz App circuit, Z0 = 50Ω, VCC = 6.0V, Iq = 724mA, TBP = 30ºC Frequency of Operation Output Power at 1dB Compression – 2.7GHz Small Signal Gain – 2.7GHz EVM at 27dBmOutput power EVM 802.11g 54Mb/s - 2.7GHz Third Order Suppression (Pout=23dBm per tone) - 2.7GHz Noise Figure at 2.7 GHz Worst Case Input Return Loss 2.5-2.7GHz Worst Case Output Return Loss 2.5-2.7GHz Output Voltage Range for Pout=10dBm to 33dBm Quiescent Current (Vcc = 6V) Power Up Control Current (Vpc=6V, ( IVPC1 +IVPC2+ IVPC3 ) Vcc Leakage Current (Vcc = 6V, Vpc = 0V) Thermal Resistance (junction - lead) The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2007 Sirenza Microdevices, Inc. All worldwide rights reserved. 303 South Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-105683 Rev B Preliminary SZM-2166Z 2.3-2.7GHz 2W Power Amp Typical Performance with appropriate app circuit(Vcc=6V, ***Icq=655mA, * 802.11g 54Mb/s 64QAM) Parameter Gain @ Pout=26dBm P1dB EVM% at 27dBm Output Power* Current @ Pout 2.5% EVM* Input Return Loss Output Return Loss Units dB dBm % mA dB dB **2.3GHz 37.5 34 2.3 768 23 14 **2.4GHz 37.5 34 2.9 779 21 11 ***2.5GHz 37.5 35 1.7 900 14 20 ***2.6GHz 37 35 1.7 889 14 25 ***2.7GHz 35 35 2.5 878 14 18 **Measured with 2.3-2.4GHz Application circuit. See page 11 for details. ***Measured with 2.5-2.7GHz Application circuit. See page 13 for details Absolute Maximum Ratings Parameters VC3 Collector Bias Current (IVC3) VC2 Collector Bias Current (IVC2) VC1 Collector Bias Current (IVC1) *****Device Voltage (VD) Power Dissipation Operating Lead Temperature (TL) ****Max CW RF output Power for 50 ohm continuous long term operation Max CW RF Input Power for 50 ohm output load Max CW RF Input Power for 10:1 VSWR RF out load Max Storage Temperature Operating Junction Temperature (TJ) ESD Human Body Model Value 1500 500 150 9.0 6 -40 to +85 30 26 5 +150 +150 Class 1B Unit mA mA mA V W ºC dBm dBm dBm ºC ºC Caution: ESD Sensitive Appropriate precaution in handling, packaging and testing devices must be observed. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias conditions should also satisfy the following expression: IcqVcc < (TJ - TL) / RTH’ j-l Note: Icq in this equation is for the stage with the highest current **** With specified application circuit. *****No RF Drive 303 South Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-105683 Rev B Preliminary SZM-2166Z 2.3-2.7GHz 2W Power Amp Pin Out Description Pin # 7, 11,12, 22, 29, 31, 39, 40 1,10, 21, 30 2 3 4-5 6 8 Function NC GND VC1 VBIAS12 R1A-R2A RFIN VPC1 Description These are no connect (NC) pins and are not wired inside the package. It is recommended to connect them as shown in the application circuit to achieve the stated performance. These pins are internally grounded inside the package to the backside ground paddle. It is recommended to also ground them external to the package to achieve the specified performance. This is the collector of the first stage. This is the supply voltage for the active bias circuit of the 1st and 2nd stages. A resistor is tied across these pins internal to the package. This is the RF input pin. It is DC grounded inside the package. Do not apply DC voltage to this pin. Power up/down control pin for the 1st stage. An external series resistor is required for proper setting of bias levels depending on control voltage. The voltage on this pin should never exceed the voltage on pin 3 by more than 0.5V unless the supply current from pin 3 is limited < 10mA. Power up/down control pin for the 2nd stage. Power down VPC