AP132-317

Preliminary 3 V InGaP DCS Power Amplifier AP132-317 Features ■ Single Supply, 3.2 V Nominal Operating Voltage ■ DCS1800 and PCS1900 Operation ■ Output Power Greater Than 33 dBm ■ High Power Added Efficiency of 50% ■ Ultra Small, Thermally Enhanced Micro Leadframe Package ■ Low Current Standby Mode: < 10 µA ■ Integral Analog Power Control With 70 dB of Dynamic Range ■ GPRS Class 12 Capable ■ Designed to Work With AP131-317 as a Dual-/Tri-Band Solution 12˚ MAX. -317 0.157 (4.00 mm) BSC 0.148 (3.75 mm) BSC 0.148 (3.75 mm) BSC 2 0.079 (2.00 mm) 0.058 (1.47 mm) 0.058 (1.47mm) 1 0.062 2 (0.16 mm) 0.079 (2.00 mm) 1 16 0.157 (4.00 mm) BSC PIN INDICATOR 0.031 0.024 (0.80 mm) (0.60 mm) 0.124 BSC REF. (0.32 mm) 0.025 (0.65 mm) + 0.004 (0.10 mm) 0.039 (1.00 mm) MAX. 0.001 (0.025 mm) + 0.001 (0.025 mm) SEATING PLANE Absolute Maximum Ratings Characteristic Value 6 V Max. 4 V Max. 15 dBm Max. -40 to +85°C -45 to +120°C Supply Voltage VCC, Standby Mode, VAPC < 0.3 (No RF Input Power) Power Control Voltage Input Power (CW) Operating Case Temperature Storage Temperature Description The AP132-317 is a high performance IC power amplifier designed for use as the final amplification stage in GSM or GPRS mobile phones, and other digital wireless applications in the 1700–2000 MHz band. It features 3-cell battery operation, integrated analog power control with over 70 dB of dynamic range, and exceptional power added efficiency over the full battery voltage range. The amplifier is manufactured on an advanced InGaP HBT process, known industry-wide for its excellent reliability and performance.The AP132-317 is designed to be stable over a wide temperature range of -40 to +85°C and over a 10:1 output VSWR load. Output matching is provided externally to maximize performance, reduce costs, and allow optimal matching for output power and efficiency over a broader frequency range. A dual- and/or tri-band solution can be obtained by combining the AP132-317 with Alpha’s AP131-317. The AP132-317 is packaged in a thermally enhanced, ultra small micro leadframe package. DC Specifications Parameter Supply Voltage Leakage Current Power Control Voltage Power Control Current VAPC1,2 = 2.6 V, VCC = 3.2 V, CW No Input RF Power 0.1 Condition Min. 2.8 Typ. 3.2 Max. 4.2 10 2.6 5 Unit V µA V mA Skyworks Solutions, Inc. [978] 241-7000 • Fax [978] 241-7906 • Email sales@skyworksinc.com • www.skyworksinc.com Specifications subject to change without notice. 2/02A 1 3 V InGaP DCS Power Amplifier AP132-317 Electrical Specifications at 25°C Parameter Frequency Output Power DCS PCS VAPC1,2 = 2.6 V, VCC = 3.2 V, CW VAPC1,2 = 2.8 V, VCC = 3.5 V, CW VAPC1,2 = 2.8 V, VCC = 2.7 V, T = -20 to +85°C, CW VAPC = 0.1 to 2.8 V VAPC = 0.1 to 2.8 V POUT = POUT Max. POUT = 0–32.5 dBm PIN = 6 dBm, VAPC = 0.1 V PIN = 9 dBm, VAPC = 0.1 V At POUT Max., VCC = 3.2 V At POUT Max., VCC = 3.2 V 1805–1880 MHz, 100 KHz BW Output VSWR = 10:1 All Phase Angles, VCC = 4.2 V, PIN = 10 dBm, VAPC = 2.6 V Output VSWR = 10:1 All Phase Angles, VCC = 4.2 V, PIN = 10 dBm, VAPC = 2.6 V -50 -60 42 3 Condition Min. 1710 1850 32.0 32.5 30.5 60 75 50 6 10 2:1 -40 -35 -45 -55 -40 -76 No Module Damage or Permanent Performance Degradation -36 dBm dBm dBm dBc dBc dBm dBm 180 33.0 33.5 32.0 Typ. Max. 1785 1910 Unit MHz MHz dBm dBm dBm dB dB/VAPC % dBm Dynamic Range Power Control Slope Power Added Efficiency Input Power Input VSWR Forward Isolation Second Harmonic Third Harmonic All Others Non-harmonic Spurious Noise in the RX Band Ruggedness Stability Unless otherwise stated: pulsed operation @ 12.5% duty cycle, 50 Ω system, VCC = 3.2 and TA = 25°C. 2 Skyworks Solutions, Inc. [978] 241-7000 • Fax [978] 241-7906 • Email sales@skyworksinc.com • www.skyworksinc.com Specifications subject to change without notice. 2/02A 3 V InGaP DCS Power Amplifier AP132-317 Pin Out GND VCC2 VCC2 2 F0 N/C 16 15 14 13 1 Pin Configuration Pin 1 2 GND RF In GND 2 3 4 12 11 10 Symbol GND GND RF In Function Ground connection. Ground connection. RF input to power amplifier. A 33 pF DC blocking capacitor is required. Ground connection. Power supply input voltage. 1 µF and 33 pF RF bypassing capacitors are required. Power control input voltage for the first two stages of the amplifier. 10 nF, 100 pF, and 10,000 pF RF bypassing capacitors are required. Can be connected to Pin 7 for single power control operation. Power control input voltage for the third stage of the amplifier. 10 nF, 100 pF and 10,000 pF RF bypassing capacitors are required. Can be connected to Pin 6 for single power control operation. Power supply input voltage. 10 nF, 1 µF and 100 pF RF bypassing capacitors are required. Ground connection. 1. RF output: Two shunt matching capacitors, 4.5 pF high Q and 1.5 pF, and series 33 pF DC blocking capacitors are required. 2. VCC3: 100 pF, 10 nF, and 1 µF RF bypassing capacitors are required. RF Out RF Out RF Out 3 4 5 6 7 8 9 GND VCC VAPC1 VAPC2 VREF VCC1 GND 5 6 VAPC1 7 VAPC2 8 VCC 9 10 GND RF Out/VCC3 11 12 13 RF Out/VCC3 RF Out/VCC3 2 RF output and power supply input voltage. See description for Pin 10. RF output and power supply input voltage. See description for Pin 10. Second harmonic termination. This pin can be used to alter the second harmonic output characteristics, but for nominal GSM operation, no matching elements are required. No connect. Power supply input voltage. 1 µF, 100 pF, 10 nF, 5.6 pF and 10 pF interstage tuning and RF bypassing capacitors are required. Power supply input voltage connected to Pin 15. 14 15 NC VCC 16 VCC Skyworks Solutions, Inc. [978] 241-7000 • Fax [978] 241-7906 • Email sales@skyworksinc.com • www.skyworksinc.com Specifications subject to change without notice. 2/02A 3