1T408

1T408 Variable Capacitance Diode Description The 1T408 is a variable capacitance diode designed for electronic tuning of wide-band CATV tuners using a super-small-miniature flat package (SSVC). Features • Super-small-miniature flat package • Small series resistance 0.75Ω Max. (f = 470MHz) • Large capacitance ratio 11.7 Typ. (C2/C25) 18.0 Typ. (C1/C28) • Small leakage current 10nA Max. (VR = 28V) • Capacitance deviation in a matching group: within 2% Applications Electronic tuning of wide-band CATV tuners Structure Silicon epitaxial planar-type diode Absolute Maximum Ratings (Ta = 25°C) • Reverse voltage VR 34 • Operating temperature Topr –20 to +75 • Storage temperature Tstg –65 to +150 Electrical Characteristics Item Reverse current Diode capacitance IR C2 C25 Capacitance ratio Series resistance Capacitance deviation in a matching group C2/C25 C25/C28 rs ∆C CD = 14pF, f = 470MHz VR = 2 to 25V, f = 1MHz Symbol VR = 28V VR = 2V, f = 1MHz VR = 25V, f = 1MHz 29.46 2.49 11.0 1.03 0.75 2 Ω % 11.7 Conditions Min. Typ. M-290 V °C °C (Ta = 25°C) Max. 10 35.46 2.89 Unit nA pF pF Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E97522-PS 1T408 Example of Representative Characteristics Diode capacitance vs. Reverse voltage 100 Ta = 25°C 50 VR = 28V Reverse current vs. Ambient temperature C – Diode capacitance [pF] 20 100 10 5 IR – Reverse current [pA] 1 2 5 10 20 VR – Reverse voltage [V] 50 2 10 1 1 –20 0 20 40 60 Ta – Ambient temperature [°C] 80 Forward voltage vs. Ambient temperature 0.80 50 Reverse voltage vs. Ambient temperature VR – Reverse voltage [V] IR = 10µA 45 VF – Forward voltage [V] IF = 1mA 0.70 0.60 40 0.50 –20 0 20 40 60 Ta – Ambient temperature [°C] 80 35 –20 0 20 40 60 Ta – Ambient temperature [°C] 80 –2– 1T408 Diode capacitance vs. Ambient temperature 1.03 VR = 1V C [Ta] / C [25°C] – Diode capacitance 1.02 VR = 2V VR = 7V 1.01 VR = 15V VR = 25V 1.00 0.99 0.98 –20 0 20 40 60 Ta – Ambient temperature [°C] 80 Reverse current vs. Reverse voltage 1000 1000 Ta = 80°C Temperature coefficient of diode capacitance Temperature coefficient [ppm/°C] 500 Ta = 60°C IR – Reverse current [pA] 100 200 Ta = 25°C 100 50 1 10 2 5 10 VR – Reverse voltage [V] 20 50 1 1 3 10 VR – Reverse voltage [V] 50 –3– 1T408 Package Outline Unit: mm M-290 1.3 ± 0.1 A 1.7 ± 0.1 0.8 ± 0.1 0.2 M A 10° MAX b c 10° MAX 0.7 ± 0.1 BASE METAL WITH PLATING c b 0.11 ± 0.005 0.3 ± 0.025 + 0.11 – 0.05 0.01 + 0.05 0.3 – 0.02 PACKAGE MATERIAL SONY CODE EIAJ CODE JEDEC CODE M-290 LEAD TREATMENT LEAD MATERIAL PACKAGE WEIGHT EPOXY RESIN SOLDER PLATING COPPER 0.002g –4– 0.2 ± 0.05