SLD304XT-2

SLD304XT 1000mW High Power Laser Diode Description The SLD304XT allows independent thermal and electric design. This laser diode has a built-in TE (Thermo Electric) cooler. Features • High power Recommended optical power output Po = 900mW • Low operating current • Flat Package with built-in photodiode, TE cooler and thermistor Applications • Solid state laser excitation • Medical use Structure AlGaAs double-hetero-type laser diode Operating Lifetime MTTF 10,000H (effective value) at Po = 900mW, Tth = 25°C Absolute Maximum Ratings (Tth = 25°C) • Optical power output Po • Reverse voltage VR LD PD • Operating temperature Topr • Storage temperature Tstg Equivalent Circuit TE Cooler N P TH LD PD 1 2 3 4 5 6 7 8 Pin Configuration (Top View) No. 1 2 3 4 5 6 1000 2 15 –10 to +30 –40 to +85 mW V V °C °C 7 8 Function TE cooler (negative) Thermistor lead 1 Thermistor lead 2 Laser diode (anode) Laser diode (cathode) Photodiode (cathode) Photodiode (anode) TE cooler (positive) Warranty This warranty period shall be 90 days after receipt of the product or 1,000 hours operation time whichever is shorter. Sony Quality Assurance Department shall analyze any product that fails during said warranty period, and if the analysis results show that the product failed due to material or manufacturing defects on the part of Sony, the product shall be replaced free of charge. Laser diodes naturally have differing lifetimes which follow a Weibull distribution. Special warranties are also available. 1 8 Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E88066C02-PS SLD304XT Electrical and Optical Characteristics Item Threshold current Operating current Operating voltage Wavelength∗ Monitor current Perpendicular Radiation angle Parallel Position Positional accuracy Differential efficiency Thermistor resistance Angle Symbol Ith Iop Vop λp Imon θ⊥ θ// ∆X, ∆Y ∆φ⊥ ηD Rth PO = 900mW PO = 900mW PO = 900mW PO = 900mW VR = 10V PO = 900mW Conditions (Tth: Thermistor temperature, Tth = 25°C) Min. Typ. 550 1600 2.2 770 1.5 28 13 PO = 900mW PO = 900mW Tth = 25°C 0.65 0.85 10 40 17 ±100 ±3 Max. 750 2000 3.0 840 Unit mA mA V nm mA degree degree µm degree mW/mA kΩ ∗ Wavelength Selection Classification Type SLD304XT-1 SLD304XT-2 SLD304XT-3 Type SLD304XT-21 SLD304XT-24 SLD304XT-25 Wavelength (nm) 785 ± 15 810 ± 10 830 ± 10 Wavelength (nm) 798 ± 3 807 ± 3 810 ± 3 Handling Precautions Eye protection against laser beams The optical output of laser diodes ranges from several mW to 1W. However the optical power density of the laser beam at the diode chip reaches 1MW/cm2. Unlike gas lasers, since laser diode beams are divergent, uncollimated laser diode beams are fairly safe at a laser diode. For observing laser beams, ALWAYS use safety goggles that block infrared rays. Usage of IR scopes, IR cameras and fluorescent plates is also recommended for monitoring laser beams safely. Laser diode Lens Optical material Safety goggles for protection from laser beam IR fluorescent plate AP C ATC Optical boad Optical power output control device temperature control device –2– SLD304XT Example of Representative Characteristics Optical power output vs. Forward current characteristics 1000 Tth = 25°C Tth = 0°C Po – Optical power output [mW] Tth = –10°C Tth = 15°C Po – Optical power output [mW] Tth = 30°C Tth = 25°C 1000 Tth = 15°C Tth = 0°C Tth = –10°C Tth = 30°C Optical power output vs. Monitor current characteristics 500 500 0 0 0 0.5 Imon – Monitor current [mA] 1 0 500 1000 1500 2000 IF – Forward current [mA] Threshold current vs. Temperature characteristics 1000 Power dependence of far field pattern (parallel to junction) Tth = 25°C PO = 900mW Ith – Threshold current [mA] 500 Radiation intensity (optional scale) PO = 800mW PO = 600mW PO = 400mW 100 –10 0 10 20 30 PO = 200mW Tth – Thermistor temperature [°C] –30 –20 –10 0 10 20 30 Angle [degree] Power dependence of near field pattern Tth = 25°C Radiation intensity (optional scale) PO = 900mW λp – Oscillation wavelength [nm] PO = 800mW PO = 600mW PO = 400mW PO = 200mW Oscillation wavelength vs. Temperature characteristics 830 PO = 900mW 820 810 800 790 200µm 780 –10 0 10 20 30 40 Tth – Thermistor temperature [°C] –3– SLD304XT Differential efficiency vs. Temperature characteristics 400 Power dependence of polarization ratio Tth = 25°C ηD – Differential efficiency [mW/mA] 1.0 300 Polarization ratio –10 0 10 20 30 40 200 0.5 100 0 0 200 400 600 800 1000 Tth – Thermistor temperature [°C] Po – Optical power output [mW] –4– SLD304XT Power dependence of wavelength Tth = 25°C Po = 200mW Relative radiant intensity Relative radiant intensity Tth = 25°C Po = 400mW 800 805 Wavelength [nm] 810 800 805 Wavelength [nm] 810 Tth = 25°C Po = 600mW Relative radiant intensity Relative radiant intensity Tth = 25°C Po = 800mW 800 805 Wavelength [nm] 810 800 805 Wavelength [nm] 810 Tth = 25°C Po = 900mW Relative radiant intensity 800 805 Wavelength [nm] 810 –5– SLD304XT Temperature dependence of wavelength (Po = 900mW) Tth = –5°C Tth = 0°C Relative radiant intensity 795 805 Wavelength [nm] 815 Relative radiant intensity 795 805 Wavelength [nm] 815 Tth = 5°C Tth = 10°C Relative radiant intensity 795 805 Wavelength [nm] 815 Relative radiant intensity 795 805 Wavelength [nm] 815 Tth = 15°C Tth = 20°C Relative radiant intensity 795 805 Wavelength [nm] 815 Relative radiant intensity 795 805 Wavelength [nm] 815 –6– SLD304XT Tth = 25°C Tth = 30°C Relative radiant intensity 795 805 Wavelength [nm] 815 Relative radiant intensity 795 805 Wavelength [nm] 815 TE cooler characteristics TE cooler characteristics 1 10 Tc = 33°C 10 TE cooler characteristics 2 IT = 2.5A Tc = 25°C ∆T vs V VT – Pin voltage [V] Q – Absorbed heat [W] Q – Absorbed heat [W] ∆T vs V IT = 2.5A 5 2.0A 5 1.5A 3 1.0A 2 0.5A 2.0A 1 0 0 4 5 1.5A 5 1.0A 4 3 2 ∆T 0.5A vs Q 5A 2.0A 0. 0 5A 1. 0A 50 1. 2. 1 0 5A 100 0 0 50 100 ∆T – Temperature difference [°C] ∆T : Tc – Tth Tth: Thermistor temperature Tc : Case temperature ∆T – Temperature difference [°C] Termistor characteristics 50 Rth – Thermistor resistance [kΩ] 10 5 1 –10 0 10 20 30 40 50 60 70 Tth – Thermistor temperature [°C] –7– VT – Pin voltage [V] 2.0A ∆T vs Q 1. 0A 0. 5A 1. 5A 2. 5A SLD304XT Package Outline Unit: mm M – 273(LO – 10) + 0.05 4 – Ø3.0 0 33.0 ± 0.05 14.0 Ø5.0 Window Glass 15.0 ± 0.05 * 7.5 ± 0.1 4 – R1.2 ± 0.3 8 – Ø0.6 2.54 38.0 ± 0.5 0.65MAX LD Chip 19.0 28.0 ± 0.5 + 2.0 8.0 – 1.0 Reference Plane 28.0 ± 0.5 7.5 ± 0.2 11.35 ± 0.1 10.4 *16.5 ± 0.1 *Distance between pilot hole and emittng area PACKAGE STRUCTURE SONY CODE EIAJ CODE JEDEC CODE M-273(LO-10) PACKAGE WEIGHT 43g –8– 3.0 Sony Corporation