SSM2309GN

SSM2309GN P-channel Enhancement-mode Power MOSFET Low gate-charge Simple drive requirement Fast switching Pb-free; RoHS compliant. D BV DSS R DS(ON) ID -30V 75mΩ -3.7A G S DESCRIPTION The SSM2309GN is in a SOT-23-3 package, which is widely used for lower power commercial and industrial surface mount applications. It is well suited for low voltage applications such as DC/DC converters and and general switching applications. D S SOT-23-3 G ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1,2 3 3 Rating -30 ± 20 -3.7 -3 -12 1.38 0.01 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range THERMAL DATA Symbol Rthj-a Parameter Thermal Resistance, Junction-ambient 3 Value Max. 90 Unit °C/W 2/16/2005 Rev.2.1 www.SiliconStandard.com 1 of 5 SSM2309GN Electrical Characteristics @ T j = 25°C (unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA Min. -30 -1 Typ. -0.02 5 5 1 3 8 5 20 7 412 91 62 Max. Units 75 120 -3 -1 -25 ±100 8 660 V V/°C mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF ∆ BVDSS/ ∆ Tj RDS(ON) Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=-1mA Static Drain-Source On-Resistance VGS=-10V, ID=-3A VGS=-4.5V, ID=-2.6A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=55 C) o o VDS=VGS, ID=-250uA VDS=-10V, ID=-3A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS=±20V ID=-3A VDS=-24V VGS=-4.5V VDS=-15V ID=-1A RG=3.3Ω , VGS=-10V RD=15Ω VGS=0V VDS=-25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=-1.2A, VGS=0V IS=-3A, VGS=0V, dI/dt=100A/µs Min. - Typ. 20 15 Max. Units -1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by maximum junction temperature. 2.Pulse width