SSM2316GN
N-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BVDSS R DS(ON) ID
DESCRIPTION
The SSM2316GN acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. The SSM2316GN is supplied in an RoHS-compliant SOT-23-3 package, which is widely used for lower power commercial and industrial surface mount applications.
30V 42mΩ 4.7A
Pb-free; RoHS-compliant SOT-23-3
D
S
SOT-23-3
G
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current
1,2
3
3 ,
Value 30 ± 20 T A = 25°C TA = 70°C 4.7 3.7 10 1.38 0.01 -55 to 150 -55 to 150
Units V V A A A W W/°C °C °C
Total power dissipation , TA = 25°C Linear derating factor Storage temperature range Operating junction temperature range
THERMAL CHARACTERISTICS
Symbol RΘJA Parameter Maximum thermal resistance, junction-ambient
3
Value 90
Units °C/W
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C. 2.Pulse width
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