0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
SSM2316GN

SSM2316GN

  • 厂商:

    SSC

  • 封装:

  • 描述:

    SSM2316GN - N-channel Enhancement-mode Power MOSFET - Silicon Standard Corp.

  • 数据手册
  • 价格&库存
SSM2316GN 数据手册
SSM2316GN N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS R DS(ON) ID DESCRIPTION The SSM2316GN acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. The SSM2316GN is supplied in an RoHS-compliant SOT-23-3 package, which is widely used for lower power commercial and industrial surface mount applications. 30V 42mΩ 4.7A Pb-free; RoHS-compliant SOT-23-3 D S SOT-23-3 G ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current 1,2 3 3 , Value 30 ± 20 T A = 25°C TA = 70°C 4.7 3.7 10 1.38 0.01 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Total power dissipation , TA = 25°C Linear derating factor Storage temperature range Operating junction temperature range THERMAL CHARACTERISTICS Symbol RΘJA Parameter Maximum thermal resistance, junction-ambient 3 Value 90 Units °C/W Notes: 1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C. 2.Pulse width
SSM2316GN 价格&库存

很抱歉,暂时无法提供与“SSM2316GN”相匹配的价格&库存,您可以联系我们找货

免费人工找货