SSM2761P-A

SSM2761P-A N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY Lower On-resistance Fast Switching Characteristic Simple Drive Requirement RoHS Compliant D BVDSS RDS(ON) ID 650V 1Ω 10A G S DESCRIPTION The TO-220 package is universally preferred for all commercialindustrial applications. The device is suited for DC-DC ,AC-DC converters for power applications. G Pb-free; RoHS-compliant D TO-220 S ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 650 ±30 10 4.4 18 104 0.8 10 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ A ℃ ℃ Total Power Dissipation Linear Derating Factor Avalanche Current Storage Temperature Range Operating Junction Temperature Range THERMAL DATA Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 1.2 62 Units ℃/W ℃/W 05/25/2007 Rev.1.00 www.SiliconStandard.com 1 SSM2761P-A ELECTRICAL CHARACTERISTICS @Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=1mA Min. 650 2 - Typ. 0.6 4.5 53 10 15 16 20 82 36 320 8 Max. Units 1 4 10 100 ±100 85 V V/℃ Ω V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25 ℃, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VGS=10V, ID=3.5A VDS=VGS, ID=250uA VDS=10V, ID=3.5A VDS=600V, VGS=0V VDS=480V, VGS=0V VGS=±30V ID=10A VDS=520V VGS=10V VDD=320V ID=10A RG=10Ω,VGS=10V RD=32Ω VGS=0V VDS=15V f=1.0MHz Gate-Source Leakage Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 3 2770 4430 Source-Drain Diode Symbol VSD trr Qrr Notes: 1.Pulse width limited by safe operating area. o 2.Starting Tj=25 C , VDD=50V , L=1.2mH , RG=25Ω , IAS=10A. Parameter Forward On Voltage 3 3 Test Conditions IS=10A, VGS=0V IS=10A, VGS=0V, dI/dt=100A/µs Min. - Typ. 610 8.64 Max. Units 1.5 V ns µC Reverse Recovery Time Reverse Recovery Charge 3.Pulse width