SSM4500GM
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
PRODUCT SUMMARY
D2
N-CH BVDSS RDS(ON) ID
G2 S2
20V 30mΩ 6A -20V 50mΩ -5A
Simple Drive Requirement Low On-resistance Fast Switching
D2 D1 D1
P-CH BVDSS RDS(ON) ID
SO-8
S1
G1
DESCRIPTION
The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.
G1
D1
D2
G2 S1 S2
Pb-free; RoHS-compliant
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating N-channel 20 ±12 6 4.8 20 2.0 0.016 -55 to 150 -55 to 150 P-channel -20 ±12 -5 -4 -20
Units V V A A A W W/ ℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
THERMAL DATA
Symbol Rthj-a Parameter Thermal Resistance Junction-ambient
3
Value Max. 62.5
Unit ℃/W
02/13/2008 Rev.1.00
www.SiliconStandard.com
1
SSM4500GM
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
2
Test Conditions VGS=0V, ID=250uA
Min. Typ. Max. Units 20 0.5 0.037
30 45 1.2 1 25 15 480 -
V V/℃ mΩ mΩ V S uA uA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=6A VGS=2.5V, ID=5.2A
18.5 9 1.8 4.2 29 65 60 50 300 255 115
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70oC)
o
VDS=VGS, ID=250uA VDS=10V, ID=6A VDS=20V, VGS=0V VDS=16V, VGS=0V VGS=±12V ID=6A VDS=10V VGS=4.5V VDS=10V ID=1A RG=6Ω,VGS=4.5V RD=10Ω VGS=0V VDS=8V f=1.0MHz
Gate-Source Leakage Total Gate Charge
2
±100 nA
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
2
SOURCE-DRAIN DIODE
Symbol VSD trr Qrr Parameter Forward On Voltage
2
Test Conditions IS=1.7A, VGS=0V IS=6A, VGS=0V, dI/dt=100A/µs
Min. Typ. Max. Units 26 17 1.2 V ns nC
Reverse Recovery Time Reverse Recovery Charge
02/13/2008 Rev.1.00
www.SiliconStandard.com
2
SSM4500GM
P-CH Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
o
Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (T j=25 C) Drain-Source Leakage Current (T j=70 C)
o o
Test Conditions VGS=0V, ID=250uA
2
Min. Typ. Max. Units -20 -0.5 -0.037
50 90 -1 -1 -25 20 -
V V/℃ mΩ mΩ V S uA uA nC nC nC ns ns ns ns pF pF
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
VGS=-4.5V, ID=-2.2A VGS=-2.5V, ID=-1.8A VDS=VGS, ID=-250uA VDS=-10V, ID=-2.2A VDS=-20V, VGS=0V VDS=-16V, VGS=0V VGS= ± 12V ID=-5A VDS=-16V VGS=-4.5V VDS=-10V ID=-2.2A RG=6Ω,VGS=-10V RD=4.5Ω VGS=0V VDS=-20V f=1.0MHz
2.5 14 2 5.6 10 11 58 38 400 160
Gate-Source Leakage Total Gate Charge
2
±100 nA
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
2
940 1500 pF
SOURCE-DRAIN DIODE
Symbol VSD trr Qrr Parameter Forward On Voltage
2
Test Conditions IS=-1.8A, VGS=0V IS=-2.2A, VGS=0V, dI/dt=100A/µs
Min. Typ. Max. Units 25 21 -1.2 V ns nC
Reverse Recovery Time Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature. 2.Pulse width
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