SSM9987GM

SSM9987GM N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY D2 Low Gate Charge Single Drive Requirement Surface Mount Package D1 D1 D2 BVDSS RDS(ON) G2 S2 80V 90mΩ 3.5A ID DESCRIPTION SO-8 S1 G1 The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, ruggedized device design, lower on-resistance and cost-effectiveness. G1 D1 D2 G2 S1 S2 Pb-free; RoHS-compliant ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 10V Continuous Drain Current , VGS @ 10V Pulsed Drain Current 1 3 3 Rating 80 ±25 3.5 2.8 30 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range THERMAL DATA Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit ℃/W 05/31/2007 Rev.1.00 www.SiliconStandard.com 1 SSM9987GM ELECTRICAL CHARACTERISTICS @Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=1mA 2 Min. 80 1 - Typ. 0.08 7 11 3 5 8 4 24 5 980 70 50 1.2 Max. Units 90 105 3 1 25 ±100 18 1570 1.8 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=3A VGS=4.5V, ID=1A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=70oC) VDS=VGS, ID=250uA VDS=10V, ID=3A VDS=80V, VGS=0V VDS=64V ,VGS=0V VGS=±25V ID=3A VDS=64V VGS=4.5V VDS=40V ID=1A RG=3.3Ω,VGS=10V RD=40Ω VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions IS=1.6A, VGS=0V IS=3A, VGS=0V, dI/dt=100A/µs Min. - Typ. 30 40 Max. Units 1.2 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width