2N5013 thru 2N5015
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
FEATURES: • • • • • • • BVCER and BVCEO to 1000 volts Low Saturation Voltage Low Leakage at High Temperature High Gain, Low Saturation 200° C Operating, Gold Eutectic Die Attach 2N5010 thru 2N5012 Also Available, Contact Factory TX, TXV, and S-Level Screening Available
0.5 AMP 800 – 1000 Volts NPN Transistor
Maximum Ratings
Symbol
Value
Units
Collector – Emitter Voltage (RBE = 1KΩ)
Collector – Base Voltage Emitter – Base Voltage Peak Collector Current Peak Base Current Total Device Dissipation @ TC = 100º C Derate above 100º C Operating and Storage Temperature Thermal Resistance, Junction to Case CASE OUTLINE: TO-5
PIN 1: EMITTER PIN 2: BASE PIN 3: COLLECTOR
2N5013 2N5014 2N5015 2N5013 2N5014 2N5015
VCER
VCBO VEBO IC IB PD Tj, Tstg RθJC
800 900 1000 800 900 1000 5 0.5 50 2.0 20 -65 to +200 50
V
V V A mA W mW/ºC ºC ºC/W
NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0043A
DOC
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com
2N5013 thru 2N5015
Electrical Characteristic 1/ Collector – Emitter Breakdown Voltage (IC = 200µADC, RBE = 1KΩ) Collector–Base Breakdown Voltage (IC = 200µADC) Emitter–Base Breakdown Voltage (IE = 50µADC) Collector Cutoff Current VCB = 650V (2N5013) VCB = 700V (2N5014) VCB = 750V (2N5015) VCB = 650V (2N5013) VCB = 700V (2N5014) VCB = 750V (2N5015) 2N5013 2N5014 2N5015 2N5013 2N5014 2N5015
Symbol BVCER
Min 800 900 1000 800 900 1000 5 –– –– –– –– –– –– 10 30 –– –– –– 20 –– –– –– –– ––
Max ––
Units V
BVCBO BVEBO
–– –– 12 12 12 100 100 100
V V
(TC = 100°)
ICBO
µAdc
DC Current Gain 2/ (IC = 5mADC, VCE = 10VDC) (IC = 20mADC, VCE = 10VDC) Collector – Emitter Saturation Voltage 2/ (IC = 20mADC, IB = 5mADC) Base – Emitter Saturation Voltage 2/ (IC = 20mADC, IB = 5mADC) Current Gain Bandwidth Product (IC = 20mADC, VCE = 10VDC, f = 1 – 20MHz) Output Capacitance (VCB = 10VDC, IE = 0ADC, f = 1.0MHz) 2N5013 2N5014 2N5015
hFE VCE(Sat) VBE(Sat) fT Cob td VCC = 125VDC, IC = 100mADC, IB1 = 20mADC, IB2 = 20mADC tr ts tf
180 1.6 1.6 1.8 1.0 –– 30 200 1200 3.0 800
–– Vdc Vdc MHz pF nsec nsec µsec nsec
Delay Time Rise Time Storage Time Fall Time
NOTES: 1/ Unless Otherwise Specified: All Tests @25ºC 2/ Pulse Test: Pulse Width = 300 µS, Duty Cycle = 2%
For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.
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