SFF23N60S2

Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF23N60S1 SFF23N60S2 21 AMP, 600 Volts, 320 mΩ Avalanche Rated N-channel MOSFET Features: • • • • • • • • Rugged poly-Si gate Lowest ON-resistance in the industry Avalanche rated Hermetically Sealed, Hot Case power SMD Low Total Gate Charge Fast Switching TX, TXV, S-Level screening available Improved (RDS(ON) QG) figure of merit DESIGNER’S DATA SHEET SMD1, 2 Note 1/ maximum current limited by package configuration Maximum Ratings Drain - Source Voltage Gate – Source Voltage Max. Continuous Drain Current (package limited) Pulsed Drain (Instantaneous) Current (Tj limited) Max. Avalanche current Single / Repetitive Avalanche Energy Total Power Dissipation Operating & Storage Temperature Maximum Thermal Resistance SMD 1 continuous transient Symbol VDSS VGS ID1 ID2 ID3 IAR EAS / EAR PD TOP & TSTG Junction to Case SMD 2 Value 600 ±30 ±40 21 10 30 30 1500 / 30 300 -55 to +150 0.42 (typ 0.3) Units V V A A A mJ W ºC ºC/W @ TC = 25ºC @ TC = 125ºC @ TC = 25ºC @ L= 0.1 mH @ L= 0.1 mH @ TC = 25ºC R0JC NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0029B DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF23N60S1 SFF23N60S2 Symbol VGS = 0V, ID = 250μA VGS = 10V, ID = 11.5A, Tj= 25oC VGS = 10V, ID = 25A, Tj=25oC VGS =10V, ID = 11.5A, Tj= 125oC VDS = VGS, ID = 4mA, Tj= 25oC VDS = VGS, ID = 1mA, Tj= 25oC VGS = ±30V, Tj= 25oC VGS = ±20V, Tj= 125oC VDS = 600V, VGS = 0V, Tj = 25oC VDS = 480V, VGS = 0V, Tj = 125oC VDS = 10V, ID = 11.5A, Tj = 25oC VGS = 10V VDS = 300V ID = 16.5A VGS = 10V VDS = 300V ID = 16.5A RG = 2.0Ω, pw= 3us IF = 23A, VGS = 0V IF = 16.5A, VGS = 0V IF = 16.5A, di/dt = 100A/usec VGS = 0V VDS = 25V f = 1 MHz BVDSS RDS(on) VGS(th) IGSS IDSS gfs Qg Q gs Q gd td(on) tr td(off) tf VSD trr IRM(rec) Qrr Ciss Coss Crss Electrical Characteristics 4/ Drain to Source Breakdown Voltage Drain to Source On State Resistance Gate Threshold Voltage Gate to Source Leakage Zero Gate Voltage Drain Current Forward Transconductance Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn on Delay Time Rise Time Turn off Delay Time Fall Time Diode Forward Voltage Diode Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Min 600 –– –– –– 2.0 –– –– –– –– –– 10 –– –– –– –– –– –– –– –– –– –– –– –– –– –– –– Typ 620 300 300 670 3.5 3.4 20 30 0.1 0.085 20 100 23 45 28 33 80 23 1.0 0.87 210 tbd 1.3 4100 400 120 Max –– 320 –– –– 4.5 –– ±100 –– 25 1 –– –– –– –– –– –– –– –– 1.5 –– 250 –– –– –– –– –– Units V mΩ V nA μA mA Mho nC nsec V nsec A μC pF NOTES: * Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%. 1/ For Ordering Information, Price, and Availability Contact Factory. 2/ Screening per MIL-PRF-19500. 3/ For Package Outlines Contact Factory. 4/ Unless Otherwise Specified, All Electrical Characteristics @25oC. Available Part Numbers: Consult Factory PIN ASSIGNMENT (Standard) Package Drain Source Gate Pin 1 Pin 2 Pin 3 SMD1 Pin 1 Pin 2 Pin 3 SMD2 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0029B DOC