SFF25P20S2ITXV

Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF25P20 Series 25 AMP / 200 Volts 150 mΩ typical P-Channel MOSFET Features: • • • • • • • • polySi gate cell structure Low ON-resistance UIS (unclamped inductive switching) rated Hermetically Sealed, Isolated Package Low package inductance Stress relief provided by flexible leads – several options available Improved (RDS(ON) QG) figure of merit TX, TXV, S-Level screening available DESIGNER’S DATA SHEET Part Number/Ordering Information 1/ SFF25P20 ___ ___ │ └ Screening 2/ │ │ │ │ └ __ = Not Screened TX = TX Level TXV = TXV S = S Level Package 2/ S2I = SMD2 Isolated M = TO-254 Maximum Ratings Drain - Source Voltage Gate – Source Voltage Max. Continuous Drain Current Max. Instantaneous Drain Current (Tj limited) Max. Avalanche current Repetitive Avalanche Energy Total Power Dissipation Operating & Storage Temperature Maximum Thermal Resistance Junction to Case @ TC = 25ºC Continuous transient @ TC = 25ºC @ TC = 25ºC Symbol VDSS VGS ID1 ID3 IAR EAR PD T OP & TSTG R0JC Value -200 ±20 ±30 25 95 25 30 250 -55 to +150 0.83 0.6 typical Units V V A A A mJ W ºC ºC/W NOTES: 1/ For ordering information, price, operating curves, and availability- Contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ Unless otherwise specified, all electrical characteristics @25ºC. SMD 2 Isolated TO-254 NOTE: SEE DASH# DEFINITION TABLE FOR AVAILABLE LEAD FORMING CONFIGURATION NOTE: A ll specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0009B DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF25P20 series Symbol BVDSS RDS(on) VGS(th) IGSS IDSS gfs Qg Qgs Qgd td(on) tr td(off) tf VSD trr Ciss Coss Crss o Electrical Characteristics (@25oC, unless otherwise specified) Drain to Source Breakdown Voltage Drain to Source On State Resistance Gate Threshold Voltage Gate to Source Leakage Zero Gate Voltage Drain Current Forward Transconductance Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn on Delay Time Rise Time Turn off Delay Time Fall Time Diode Forward Voltage Diode Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance NOTES: Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%. VGS = 0V, ID = 250μA VGS = 10V, ID = 12A, Tj= 25 C o VGS = 10V, ID = 25A, Tj= 25 C VDS = VGS, ID = 250μA VGS = ±20V VDS = 160V, VGS = 0V, Tj = 25 C o VDS = 160V, VGS = 0V, Tj = 125 C VDS = 10V, ID = 24A, Tj = 25oC VGS = 10V VDS = 100V ID = 12A VGS = 10V VDS = 100V ID = 12A RG = 4.7Ω IF = 25A, VGS = 0V IF = 24A, di/dt = 100A/usec VGS = 0V VDS = 25V f = 1 MHz o Min 200 –– –– 3.0 –– –– –– 5 –– –– –– –– –– –– –– –– –– –– –– –– Typ –– 125 150 –– –– –– –– 12 150 35 70 35 30 70 30 2.0 250 4200 850 350 Max –– 150 –– 5.0 ±100 25 1 –– –– –– –– –– –– –– 3.0 –– –– –– –– Units V mΩ V nA μA mA Mho nC nsec V nsec pF NOTE: A ll specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0009B DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF25P20 series TO-254 (M) SMD2 Isolated .50 MIN .920 .50 MIN 1 .610 2 .290 3 .190 .160 .014 .006 A .160 MAX 3x .11±.02 2x .050 .220 .570 .510 .610 TOLERANCES: (UNLESS OTHERWISE SPECIFIED) .XX ± .02 .XXX ± .010 .880 LEAD FORMING CONFIGURATIONS SMD1I dash# -01 -02 -03 A 0.062” 0.000” 0.097” Package SMD1I PIN ASSIGNMENT (Standard) Drain Source Pin 1 Pin 2 Gate Pin 3 NOTE: A ll specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0009B DOC