SHF1104_2

Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SHF1104 & SHF1104SMS thru SHF1110 & SHF1110SMS 1 AMP 400 - 1000 V Hyper Fast Rectifier Features: • • • • • • • Hyper fast recovery: 40 nsec maximum PIV to 1000 Volts, consult factory Hermetically sealed Void free construction For high efficiency applications Replaces UES 1104, UES1106, 1N6621-1N6625 2/ TX, TXV, and S level screening available DESIGNER’S DATA SHEET Part Number/Ordering Information 1/ SHF11 __ __ __ │ │ │ │ │ │ │ │ └ │ │ │ │ └ └ Screening 2/ __ = Not Screened TX = TX Level TXV = TXV Level S = S Level Package Type __ = Axial Leaded SMS = Surface Mount Square Tab Family/Voltage 04 = 400 V 06 = 600 V 08 = 800 V 09 = 900 V 10 = 1000V Maximum Ratings SHF1104 SHF1106 SHF1108 SHF1109 SHF1110 Symbol VRRM VRSM VR IO IFSM TOP & TSTG Junction to Leads, L = 3/8 Junction to Tabs RθJE Value 400 600 800 900 1000 1.0 20 -65 to +175 35 28 Units Peak Repetitive Reverse and DC Blocking Voltage Volts Average Rectified Forward Current (Resistive Load, 60 Hz Sine Wave, TA = 25°C) Peak Surge Current (8.3 ms Pulse, Half Sine Wave, TA = 25°C) Operating & Storage Temperature Maximum Thermal Resistance NOTES: 1/ For ordering information, price, and availability - contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. Amps Amps ºC ºC/W SMS Axial Lead Diode NOTE: A ll specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RH0111G DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SHF1104 & SHF1104SMS thru SHF1110 & SHF1110SMS Symbol SHF1104-1106 SHF1108-1110 SHF1104-1106 SHF1108-1110 Max Units Electrical Characteristic Instantaneous Forward Voltage Drop (IF = 1ADC, TA = 25ºC pulsed) Instantaneous Forward Voltage Drop (IF = 1ADC, TA = -55ºC pulsed) Reverse Leakage Current (Rated VR, TA = 25ºC pulsed) Reverse Leakage Current (Rated VR, TA = 100ºC pulsed) Reverse Recovery Time (IF = 500mA, IR = 1A, IRR = 250mA, TA = 25ºC) Junction Capacitance (VR = 10VDC, TA = 25ºC, f = 1MHz) Case Outline: (Axial) VF VF 1.35 1.65 1.50 1.80 10 1 40 22 DIM A B C D MIN 0.100” 0.130” 0.027” 1.00” VDC VDC µA mA nsec pF MAX 0.130” 0.180” 0.033” -- IR IR tRR CJ D B D ØC ØA Case Outline: (SMS) B A DIM A B C D A MIN 0.127” 0.180” 0.020” 0.002” MAX 0.140” 0.230” 0.030” -- C D NOTE: A ll specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RH0111G DOC