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SRM4HF

SRM4HF

  • 厂商:

    SSDI

  • 封装:

  • 描述:

    SRM4HF - Hyper Fast Rectifier - Solid States Devices, Inc

  • 数据手册
  • 价格&库存
SRM4HF 数据手册
PRELIMINARY Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SRM3HF thru SRM4HF Series 20 AMP 300-400 Volts 40 nsec Hyper Fast Rectifier Features: • • • • • • • • • • • Replaces DO-4 and DO-5 (1N5816,1N6306) High Current/ Voltage Version of 1N5811 Hyper Fast Recovery PIV to 400 Volts Low Reverse Leakage Current Hermetically Sealed Void-Free Construction 3/ Monolithic Single Chip Construction High Surge Rating Low Thermal Resistance Available in Surface Mount Versions Equivalent to 1N6688-1N6689 T X, TXV, and Space Level Screening Available Designer’s Data Sheet Part Number / Ordering Information 1/ SRM__ HF __ __ │ │ └ Screening2/ __ = Not Screened │ │ T X = TX Level TXV = TXV │ │ S = S Level │ │ │ └ Package Type __ = Axial │ SMS = Surface Mount Square Tab │ BTR = Button │ │ └ Voltage 3 = 300 V 4 = 400 V • M AXIMUM RATINGS Peak Repetitive Reverse Voltage and DC Blocking Voltage Average Rectified Forward Current (Resistive Load, 60Hz Sine Wave, TA=25◦C) Symbol SRM3HF SRM4HF VRRM VRWM VR IO IFSM T op & T stg Axial ( ) Square Tab (SMS) Button (BTR) Value 300 400 20 475 -65 to +175 3.0 2.5 1.0 Units Volts Amps Amps o Peak Surge Current (8.3 ms Pulse, Half sine Wave Superimposed on Io, Allow Junction to Reach Equilibrium Between Pulses, TA=25oC) Operating and Storage Temperature Maximum Thermal Resistance (Axial – Junction to Lead, L=3/8”) (SMS – Junction to End Tab) (Button – Junction to Case) C Rθ JL Rθ JE Rθ JC o C/W Notes: 1/ For ordering information, price, operating curves, and availability, contact factory. 2/ Modified MIL-PRF-19500 Screening Flow – Consult Factory. 3/ P IND testing not required on void free devices per MIL-PRF-19500. Axial SMS Button NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RH0165F DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SRM3HF thru SRM4HF Series ELECTRICAL CHARACTERISTICS Instantaneous Forward Voltage Drop (IF = 20Adc, 500 μsec Pulse, T A = 25oC) Symbol VF1 VF2 IR1 IR2 CJ trr M ax 1.05 1.2 100 10 350 40 Unit Vdc Vdc μA mA pF nsec Instantaneous Forward Voltage Drop (IF = 20Adc, 300 μsec Pulse, T A = -65oC) Reverse Leakage Current Reverse Leakage Current Junction Capacitance (Rated VR, 300 μsec Pulse Minimum, T A = 25oC) (Rated VR, 300 μsec Pulse Minimum, T A = 100oC) (VR =10 VDC, f = 1MHz, T A = 25oC) (IF = 0.5A, IR = 1.0 A, IRR = 0.25A, T A = 25oC) Reverse Recovery Time CASE OUTLINES: Axial ( ) TOLERANCES (UNLESS SPECIFIED) .XX ± .03” .XXX ± .010” Square Tab (SMS) Button (BTR) NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RH0165F DOC
SRM4HF 价格&库存

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