SSG42N60S2

SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SSG42N60 SERIES 50 AMP 600 VOLTS FAST POWER IGBT APPLICATION NOTES: • 600V IGBT Technology • Positive Temperature Coefficient for Ease of Paralleling • High Current Switching for Motor Drives and Inverters • Low Saturation Voltage at High Currents. • Low Switching Losses. • High Short Circuit Capability • MOS Input, Voltage Controlled. • Ultra Fast Free Wheeling Diodes • Hermetic Sealed Construction. • TX, TXV, and S-Level Screening Available. DESIGNER'S DATA SHEET Part Number /Ordering Information SSG42N60 N _ TX Screening 2/: _ = Not Screened TX = TX Level TXV = TXV Level S = Space Level Lead Bend 3/4/_ = Straight UB = Up Bend DB = Down Bend Package: 3/ N = TO-258, Isolated P = TO-259, Isolated S2 = SMD2 1/ MAXIMUM RATINGS Collector-Emitter Voltage Continuous Collector Current Average Diode Current Peak Collector Current Gate Emitter Voltage Operating and Storage Temperature Total Device Dissipation @ TC = 25oC Thermal Resistance, Junction to Case TO-258 (N) N, P S2 TO-259 (P) @ TC = 25oC @ TC = 90oC @ TC = 25oC SYMBOL VCEO IC IO IC(pk) IIFSM VGE TJ, TSTG PD Rθ JC SMD2 (S2) VALUE 600 70 42 40 140 300 E20 -65 to +200 200 0.8 0.7 UNITS Volts Amps Amps Volts o C W o C/W NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TG0002A SSG42N60 SERIES ELECTRICAL CHARACTERISTICS 5/ Collector - Emitter Breakdown Voltage (VGE = 0V, IC = 2mA) Collector - Emitter Saturation Voltage (VGE = 15V, IC = 50A) Gate - Emitter Threshold Voltage (VGE = VCE, IC = 1mA) Zero Gate Voltage Collector Current (VCE = 600V, VGE = 0V) Gate - Emitter Leackage Current (VGE = 30V, VCE = 0V) Input Capacitance (VCE = 25V, VGE = 0V, f = 1MHz) Output Capacitance (VCE = 25V, VGE = 0V, f = 1MHz) Reverse Transfer Capacitance (VCE = 25V, VGE = 0V, f = 1MHz) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time (VCC = 400V, IC = 50ADC, VGE = 15 / 0V, RG = --Ω, tP = 10µsec, Duty Cycle ≤ 1% Tj = 150oC) IF = 20A IF = 40A TJ = 25oC TJ = 100oC SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SYMBOL V(BR)CES VCE (SAT) VGE (th) ICES IGES C iss C oss C rss td(on) tr td(off) tf VF tRR MIN 600 3 - TYP 2 4 2750 250 50 25 30 500 360 - MAX 2.5 5 150 12 120 1.35 1.55 35 UNITS V V V µA mA nA pF pF pF nsec nsec nsec nsec V nsec Reverse Diode Forward Voltage Drop (VGE = 0V) Reverse Diode Reverse Recovery Time (IF = 0.5A, IR = 1A, IRR = 0.25A) NOTES: Available Part Numbers: SSG42N60N SSG42N60NDB SSG42N60P SSG42N60PDB SSG42N60S2 SSG42N60NUB SSG42N60PUB * Pulse Test: Pulse Width = 300us, Duty Cycle = 2% 1/ For Ordering Information, Price, and Availability Contact Factory. 2/ Screening per MIL-PRF-19500. 3/ For Package Outlines Contact Factory. 4/ Up and Down Bend Configurations Available for N and P (TO-258 and TO-259) Packages Only. 5/ All Electrical Characteristics @25 C, Unless Otherwise Specified. o PIN ASSIGNMENT PACKAGE TO-258 TO-259 SMD2 Collector Pin1 Pin 1 Pin 1 Emitter Pin 2 Pin 2 Pin 2 Gate Pin 3 Pin 3 Pin 3