SSR2009M

Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SSR2008M, SSR2008Z SSR2009M, SSR2009Z SSR2010M, SSR2010Z 20 AMPS 100 VOLTS SCHOTTKY RECTIFER FEATURES: • • • • • • • • • • PIV: 100 Volts Low Reverse Leakage Current Low Forward Voltage Drop Guard Ring for Overvoltage Protection Isolated Hermetically Sealed Package Available in Glass or Ceramic Seal Packages Custom Lead Forming Available Eutectic Die Attach 175°C Operating Junction Temperature TX, TXV, and Space Level Screening Available Designer’s Data Sheet Part Number/Ordering Information 1/ SSR20 __ __ __ __ │ │ │ │ │ │ │ │ │ │ │ │ │ └ │ │ │ │ │ │ │ │ │ │ └ │ │ │ │ │ │ └ └ Screening 2/ __ = Not Screened TX = TX Level TXV = TXV Level S = S Level Lead Options __ = Straight Leads, DB = Bent Down UB = Bent Up M = TO-254 Z = TO-254Z Package Voltage / Family 08 = 80V 09 = 90V 10 = 100V MAXIMUM RATINGS3/ Peak Repetitive Reverse Voltage and DC Blocking Voltage Average Rectified Forward Current 1/4/ (Resistive Load, 60 Hz, Sine Wave, TC = 25°C) Peak Surge Current 4/ (8.3 ms Pulse, Half Sine Wave, TA = 25°C) Operating and Storage Temperature Maximum Thermal Resistance4/ (Junction to Case) NOTE: 1/ 2/ 3/ 4/ Derate linearly at 1A/ C for TC > 155 C Screening based on MIL-PRF-19500. Screening flows available on request. ° All electrical characteristics @25 C, unless otherwise specified Pins 2 and 3 externally connected together ° ° Symbol SSR2008M & Z SSR2009M & Z SSR2010M & Z VRRM VRWM VR IO IFSM TOP & Tstg RθJC TO-254 Value 80 90 100 20 300 -65 to +175 1.2 Unit Volts Amps Amps ° C ° C/W TO-254Z NOTE: A ll specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RS0091J DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SSR2008M, SSR2008Z SSR2009M, SSR2009Z SSR2010M, SSR2010Z Symbol IF = 10 A IF = 15 A IF = 20 A IF = 10 A TA = 25°C TC = 100°C VF1 VF2 VF3 VF4 IR1 IR2 CJ ELECTRICAL CHARACTERISTICS 3/ (per leg) Instantaneous Forward Voltage Drop (300 - 500μs Pulse) Instantaneous Forward Voltage Drop (TA = -55°C, 300 - 500μs Pulse) Reverse Leakage Current (Rated VR, 300μs pulse minimum) Junction Capacitance (VR = 10 V, f = 1MHz, TA = 25°C) CASE OUTLINE: TO-254 (Suffix M) Max 0.75 0.82 0.85 0.85 200 10 800 Unit Volts Volts μA mA pF CASE OUTLINE: TO-254Z (Suffix Z) Optional Bent Down Leads (MDB & ZDB Suffix) Optional with Bent Up Leads (MUB & ZUB Suffix) Available in the following configurations: TO-254: SSR2008M, SSR2008MUB, SSR2008MDB, SSR2009M, SSR2009MUB, SSR2009MDB, SSR2010M, SSR2010MUB, SSR2010MDB SSR2008Z, SSR2008ZUB, SSR2008ZDB, SSR2009Z, SSR2009ZUB, SSR2009ZDB, SSR2010Z, SSR2010ZUB, SSR2010ZDB FUNCTION Rectifier 5/ PIN ASSIGNMENT PIN 1 PIN 2 Cathode Anode PIN 3 Anode TO-254Z: NOTE: 5/ Pins 2 and 3 externally connected for best performance. NOTE: A ll specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RS0091J DOC