SST32HF802-90-4C-TBK

Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF802 / SST32HF162 / SST32HF164 SST32HF802 / 162 / 164MPF (x16) + 1Mb SRAM (x16) ComboMemories Data Sheet FEATURES: • MPF + SRAM ComboMemory – SST32HF802: 512K x16 Flash + 128K x16 SRAM – SST32HF162: 1M x16 Flash + 128K x16 SRAM – SST32HF164: 1M x16 Flash + 256K x16 SRAM • Single 2.7-3.3V Read and Write Operations • Concurrent Operation – Read from or write to SRAM while Erase/Program Flash • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention • Low Power Consumption: – Active Current: 15 mA (typical) for Flash or SRAM Read – Standby Current: 20 µA (typical) • Flexible Erase Capability – Uniform 2 KWord sectors – Uniform 32 KWord size blocks • Fast Read Access Times: – Flash: 70 ns and 90 ns – SRAM: 70 ns and 90 ns • Latched Address and Data for Flash • Flash Fast Erase and Word-Program: – Sector-Erase Time: 18 ms (typical) – Block-Erase Time: 18 ms (typical) – Chip-Erase Time: 70 ms (typical) – Word-Program Time: 14 µs (typical) – Chip Rewrite Time: SST32HF802: 8 seconds (typical) SST32HF162/164: 15 seconds (typical) • Flash Automatic Erase and Program Timing – Internal VPP Generation • Flash End-of-Write Detection – Toggle Bit – Data# Polling • CMOS I/O Compatibility • JEDEC Standard Command Set • Package Available – 48-lead TSOP (12mm x 20mm) – 48-ball TBGA (10mm x 12mm) PRODUCT DESCRIPTION The SST32HF802/162/164 ComboMemory devices integrate a 512K x16 or 1M x16 CMOS flash memory bank with a 128K x16 or 256K x16 CMOS SRAM memory bank in a Multi-Chip Package (MCP), manufactured with SST’s proprietary, high performance SuperFlash technology. Featuring high performance Word-Program, the flash memory bank provides a maximum Word-Program time of 14 µsec. The entire flash memory bank can be erased and programmed word-by-word in typically 8 seconds for the SST32HF802 and 15 seconds for the SST32HF162/164, when using interface features such as Toggle Bit or Data# Polling to indicate the completion of Program operation. To protect against inadvertent flash write, the SST32HF802/ 162/164 devices contain on-chip hardware and software data protection schemes.The SST32HF802/162/164 devices offer a guaranteed endurance of 10,000 cycles. Data retention is rated at greater than 100 years. The SST32HF802/162/164 devices consist of two independent memory banks with respective bank enable signals. The Flash and SRAM memory banks are superimposed in the same memory address space. Both memory banks share common address lines, data lines, WE# and OE#. The memory bank selection is done by memory bank enable signals. The SRAM bank enable signal, BES# selects the SRAM bank. The flash memory © 2001 Silicon Storage Technology, Inc. S71171-05-000 8/01 520 1 bank enable signal, BEF# selects the flash memory bank. The WE# signal has to be used with Software Data Protection (SDP) command sequence when controlling the Erase and Program operations in the flash memory bank. The SDP command sequence protects the data stored in the flash memory bank from accidental alteration. The SST32HF802/162/164 provide the added functionality of being able to simultaneously read from or write to the SRAM bank while erasing or programming in the flash memory bank. The SRAM memory bank can be read or written while the flash memory bank performs SectorErase, Bank-Erase, or Word-Program concurrently. All flash memory Erase and Program operations will automatically latch the input address and data signals and complete the operation in background without further input stimulus requirement. Once the internally controlled erase or program cycle in the flash bank has commenced, the SRAM bank can be accessed for read or write. The SST32HF802/162/164 devices are suited for applications that use both flash memory and SRAM memory to store code or data. For systems requiring low power and small form factor, the SST32HF802/162/164 devices significantly improve performance and reliability, while lowering power consumption, when compared with multiple chip solutions. The SST32HF802/162/164 inherently use less energy during erase and program than alternative flash The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. MPF and ComboMemory are trademarks of Silicon Storage Technology, Inc. These specifications are subject to change without notice. Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF802 / SST32HF162 / SST32HF164 Data Sheet technologies. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash technologies. The SuperFlash technology provides fixed Erase and Program times, independent of the number of Erase/Program cycles that have occurred. Therefore the system software or hardware does not have to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Program times increase with accumulated Erase/Program cycles. SRAM Write The SRAM Write operation of the SST32HF802/162/164 is controlled by WE# and BES# being low for the system to write to the SRAM. During the Word-Write operation, the addresses and data are referenced to the rising edge of WE# or BES#, which ever occurs first. The write time is measured from the last falling edge to the rising edge of WE# or BES#. Refer to the Write cycle timing diagrams, Figures 4 and 5, for further details. Flash Operation With BEF# active, the SST32HF162/164 operate as 1M x16 flash memory and the SST32HF802 operates as 512K x16 flash memory. The flash memory bank is read using the common address lines, data lines, WE# and OE#. Erase and Program operations are initiated with the JEDEC standard SDP command sequences. Address and data are latched during the SDP commands and during the internally timed Erase and Program operations. Device Operation The ComboMemory uses BES# and BEF# to control operation of either the SRAM or the flash memory bank. When BES# is low, the SRAM Bank is activated for Read and Write operation. When BEF# is low the flash bank is activated for Read, Program or Erase operation. BES# and BEF# cannot be at low level at the same time. If BES# and BEF# are both asserted to low level bus contention will result and the device may suffer permanent damage. All address, data, and control lines are shared by SRAM Bank and flash bank which minimizes power consumption and loading. The device goes into standby when both bank enables are high. Flash Read The Read operation of the SST32HF802/162/164 devices is controlled by BEF# and OE#. Both have to be low, with WE# high, for the system to obtain data from the outputs. BEF# is used for flash memory bank selection. When BEF# and BES# are high, both banks are deselected and only standby power is consumed. OE# is the output control and is used to gate data from the output pins. The data bus is in high impedance state when OE# is high. Refer to Figure 6 for further details. SRAM Operation With BES# low and BEF# high, the SST32HF802/162 operate as 128K x16 CMOS SRAM, and the SST32HF164 operates as 256K x16 CMOS SRAM, with fully static operation requiring no external clocks or timing strobes. The SST32HF802/162 SRAM is mapped into the first 128 KWord address space of the device, and the SST32HF164 SRAM is mapped into the first 256 KWord address space. When BES# and BEF# are high, both memory banks are deselected and the device enters standby mode. Read and Write cycle times are equal. The control signals UBS# and LBS# provide access to the upper data byte and lower data byte. See Table 3 for SRAM read and write data byte control modes of operation. Flash Erase/Program Operation SDP commands are used to initiate the flash memory bank Program and Erase operations of the SST32HF802/162/ 164. SDP commands are loaded to the flash memory bank using standard microprocessor write sequences. A command is loaded by asserting WE# low while keeping BEF# low and OE# high. The address is latched on the falling edge of WE# or BEF#, whichever occurs last. The data is latched on the rising edge of WE# or BEF#, whichever occurs first. SRAM Read The SRAM Read operation of the SST32HF802/162/164 is controlled by OE# and BES#, both have to be low with WE# high for the system to obtain data from the outputs. BES# is used for SRAM bank selection. OE# is the output control and is used to gate data from the output pins. The data bus is in high impedance state when OE# is high. See Figure 3 for the Read cycle timing diagram. ©2001 Silicon Storage Technology, Inc. Flash Word-Program Operation The flash memory bank of the SST32HF802/162/164 devices is programmed on a word-by-word basis. Before the Program operations, the memory must be erased first. The Program operation consists of three steps. The first step is the three-byte load sequence for Software Data Protection. The second step is to load word address and word data. During the Word-Program operation, the addresses S71171-05-000 8/01 520 2 Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF802 / SST32HF162 / SST32HF164 Data Sheet are latched on the falling edge of either BEF# or WE#, whichever occurs last. The data is latched on the rising edge of either BEF# or WE#, whichever occurs first. The third step is the internal Program operation which is initiated after the rising edge of the fourth WE# or BEF#, whichever occurs first. The Program operation, once initiated, will be completed, within 20 µs. See Figures 7 and 8 for WE# and BEF# controlled Program operation timing diagrams and Figure 18 for flowcharts. During the Program operation, the only valid flash Read operations are Data# Polling and Toggle Bit. During the internal Program operation, the host is free to perform additional tasks. Any SDP commands loaded during the internal Program operation will be ignored. the only valid read is Toggle Bit or Data# Polling. See Table 4 for the command sequence, Figure 10 for timing diagram, and Figure 21 for the flowchart. Any commands issued during the Chip-Erase operation are ignored. Write Operation Status Detection The SST32HF802/162/164 provide two software means to detect the completion of a write (Program or Erase) cycle, in order to optimize the system write cycle time. The software detection includes two status bits: Data# Polling (DQ7) and Toggle Bit (DQ6). The End-of-Write detection mode is enabled after the rising edge of WE#, which initiates the internal program or erase operation. The actual completion of the nonvolatile write is asynchronous with the system; therefore, either a Data# Polling or Toggle Bit read may be simultaneous with the completion of the Write cycle. If this occurs, the system may possibly get an erroneous result, i.e., valid data may appear to conflict with either DQ7 or DQ6. In order to prevent spurious rejection, if an erroneous result occurs, the software routine should include a loop to read the accessed location an additional two (2) times. If both reads are valid, then the device has completed the write cycle, otherwise the rejection is valid. Flash Sector/Block-Erase Operation The Flash Sector/Block-Erase operation allows the system to erase the device on a sector-by-sector (or block-byblock) basis. The SST32HF802/162/164 offer both SectorErase and Block-Erase mode. The sector architecture is based on uniform sector size of 2 KWord. The Block-Erase mode is based on uniform block size of 32 KWord. The Sector-Erase operation is initiated by executing a six-byte command sequence with Sector-Erase command (30H) and sector address (SA) in the last bus cycle. The address lines A19-A11, for SST32HF162/164, and A18-A11, for SST32HF802, are used to determine the sector address. The Block-Erase operation is initiated by executing a sixbyte command sequence with Block-Erase command (50H) and block address (BA) in the last bus cycle. The address lines A19-A15, for SST32HF162/164, and A18-A15, for SST32HF802, are used to determine the block address. The sector or block address is latched on the falling edge of the sixth WE# pulse, while the command (30H or 50H) is latched on the rising edge of the sixth WE# pulse. The internal Erase operation begins after the sixth WE# pulse. The End-of-Erase operation can be determined using either Data# Polling or Toggle Bit methods. See Figures 12 and 13 for timing waveforms. Any commands issued during the Sector- or Block-Erase operation are ignored. Flash Data# Polling (DQ7) When the SST32HF802/162/164 flash memory banks are in the internal Program operation, any attempt to read DQ7 will produce the complement of the true data. Once the Program operation is completed, DQ7 will produce true data. Note that even though DQ7 may have valid data immediately following the completion of an internal Write operation, the remaining data outputs may still be invalid: valid data on the entire data bus will appear in subsequent successive Read cycles. During internal Erase operation, any attempt to read DQ7 will produce a ‘0’. Once the internal Erase operation is completed, DQ7 will produce a ‘1’. The Data# Polling is valid after the rising edge of the fourth WE# (or BEF#) pulse for Program operation. For Sector- or Block-Erase, the Data# Polling is valid after the rising edge of the sixth WE# (or BEF#) pulse. See Figure 9 for Data# Polling timing diagram and Figure 19 for a flowchart. Flash Chip-Erase Operation The SST32HF802/162/164 provide a Chip-Erase operation, which allows the user to erase the entire memory array to the “1” state. This is useful when the entire device must be quickly erased. The Chip-Erase operation is initiated by executing a sixbyte command sequence with Chip-Erase command (10H) at address 5555H in the last byte sequence. The Erase operation begins with the rising edge of the sixth WE# or CE#, whichever occurs first. During the Erase operation, ©2001 Silicon Storage Technology, Inc. Flash Toggle Bit (DQ6) During the internal Program or Erase operation, any consecutive attempts to read DQ6 will produce alternating 1s and 0s, i.e., toggling between 1 and 0. When the internal Program or Erase operation is completed, the toggling will stop. The flash memory bank is then ready for the next operation. The Toggle Bit is valid after the rising edge of the fourth WE# (or BEF#) pulse for Program operation. For S71171-05-000 8/01 520 3 Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF802 / SST32HF162 / SST32HF164 Data Sheet Sector- or Bank-Erase, the Toggle Bit is valid after the rising edge of the sixth WE# (or BEF#) pulse. See Figure 10 for Toggle Bit timing diagram and Figure 19 for a flowchart. The device will ignore all SDP commands when an Erase or Program operation is in progress. Note that Product Identification commands use SDP; therefore, these commands will also be ignored while an Erase or Program operation is in progress. Flash Memory Data Protection The SST32HF802/162/164 flash memory bank provides both hardware and software features to protect nonvolatile data from inadvertent writes. Product Identification The product identification mode identifies the devices as the SST32HFxxx and manufacturer as SST. This mode may be accessed by software operations only. The hardware device ID Read operation, which is typically used by programmers, cannot be used on this device because of the shared lines between flash and SRAM in the multi-chip package. Therefore, application of high voltage to pin A9 may damage this device. Users may use the software product identification operation to identify the part (i.e., using the device ID) when using multiple manufacturers in the same socket. For details, see Tables 3 and 4 for software operation, Figure 14 for the software ID entry and read timing diagram and Figure 20 for the ID entry command sequence flowchart. TABLE 1: PRODUCT IDENTIFICATION Address Manufacturer’s ID Device ID SST32HF802 SST32HF162/164 0001H 0001H 2781H 2782H T1.1 520 Flash Hardware Data Protection Noise/Glitch Protection: A WE# or BEF# pulse of less than 5 ns will not initiate a Write cycle. VDD Power Up/Down Detection: The Write operation is inhibited when VDD is less than 1.5V. Write Inhibit Mode: Forcing OE# low, BEF# high, or WE# high will inhibit the Flash Write operation. This prevents inadvertent writes during power-up or power-down. Flash Software Data Protection (SDP) The SST32HF802/162/164 provide the JEDEC approved software data protection scheme for all flash memory bank data alteration operations, i.e., Program and Erase. Any Program operation requires the inclusion of a series of three-byte sequence. The three byte-load sequence is used to initiate the Program operation, providing optimal protection from inadvertent Write operations, e.g., during the system power-up or power-down. Any Erase operation requires the inclusion of six-byte load sequence. The SST32HF802/162/164 devices are shipped with the software data protection permanently enabled. See Table 4 for the specific software command codes. During SDP command sequence, invalid SDP commands will abort the device to the read mode, within Read Cycle Time (TRC). Data 00BFH 0000H Product Identification Mode Exit/Reset In order to return to the standard read mode, the Software Product Identification mode must be exited. Exiting is accomplished by issuing the Exit ID command sequence, which returns the device to the Read operation. Please note that the software-reset command is ignored during an internal Program or Erase operation. See Table 4 for software command codes, Figure 15 for timing waveform and Figure 20 for a flowchart. Concurrent Read and Write Operations The SST32HF802/162/164 provide the unique benefit of being able to read from or write to SRAM, while simultaneously erasing or programming the Flash. This allows data alteration code to be executed from SRAM, while altering the data in Flash. The following table lists all valid states. CONCURRENT READ/WRITE STATE TABLE Flash Program/Erase Program/Erase SRAM Read Write Design Considerations SST recommends a high frequency 0.1 µF ceramic capacitor to be placed as close as possible between VDD and VSS, e.g., less than 1 cm away from the VDD pin of the device. Additionally, a low frequency 4.7 µF electrolytic capacitor from VDD to VSS should be placed within 1 cm of the VDD pin. ©2001 Silicon Storage Technology, Inc. S71171-05-000 8/01 520 4 Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF802 / SST32HF162 / SST32HF164 Data Sheet FUNCTIONAL BLOCK DIAGRAM Address Buffers SRAM AMS(1)-A0 UBS# LBS# BES# BEF# OE# WE# Control Logic I/O Buffers DQ15 - DQ8 DQ7 - DQ0 Address Buffers & Latches SuperFlash Memory 520 ILL B1.1 SST32HF162/164 A15 A14 A13 A12 A11 A10 A9 A8 A19 NC WE# VDDS BES# UBS# LBS# A18 A17 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 SST32HF162/164 A16 NC VSS DQ15 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VDDF DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE# VSS BEF# A0 Standard Pinout Top View Die Up 520 ILL F01b.1 FIGURE 1: PIN ASSIGNMENTS FOR 48-LEAD TSOP (12MM X 20MM) ©2001 Silicon Storage Technology, Inc. S71171-05-000 8/01 520 5 Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF802 / SST32HF162 / SST32HF164 Data Sheet TOP VIEW (balls facing down) TOP VIEW (balls facing down) 6 5 4 3 2 BES# VSS DQ1 A10 DQ5 DQ2 OE# DQ7 DQ4 A11 A13 A8 A5 A1 A0 DQ0 DQ8 A2 A3 A6 A4 A7 A18 NC NC NC 6 A9 A14 A15 BES# VSS DQ1 A10 DQ5 DQ2 OE# DQ7 DQ4 A11 A8 A5 A1 A0 DQ0 DQ8 A2 A3 A6 A4 A7 A18 A19 NC NC A9 A14 A15 5 4 3 2 DQ3 DQ12 A12 LBS# DQ6 DQ15 520 ILL F01a.0 DQ3 DQ12 A12 LBS# DQ6 DQ15 520 ILL F01.0 A17 UBS# BEF# DQ10 VDDF VSS A13 A17 UBS# BEF# DQ10 VDDF VSS 1 WE# VDDS A16 DQ9 DQ11 DQ13 DQ14 1 WE# VDDS A16 DQ9 DQ11 DQ13 DQ14 ABCDEFGH S ST32HF802 ABCDEFGH S ST32HF162/SST32HF164 X FIGURE 2: PIN ASSIGNMENTS FOR 48-BALL TBGA (10MM TABLE 2: PIN DESCRIPTION Symbol AMS1-A0 DQ15-DQ0 Pin Name Address Inputs Data Input/output Functions 12MM) To provide flash addresses: A19-A0 for 16M, and A18-A0 for 8M SRAM addresses: A16-A0 for 2M and A17-A0 for 4M To output data during Read cycles and receive input data during Write cycles. Data is internally latched during a flash Erase/Program cycle. The outputs are in tri-state when OE# or BES# and BEF# are high. To activate the SRAM memory bank when BES# is low. To activate the Flash memory bank when BEF# is low. To gate the data output buffers. To control the Write operations. 2.7-3.3V Power Supply to Flash only. 2.7-3.3V Power Supply to SRAM only (For L3K package, VDDF and VDDS share one pin as VDD.) To enable DQ15-DQ8 To enable DQ7-DQ0 Unconnected Pins T2.2 520 BES# BEF# OE# WE# VDDF VDDS VSS UBS# LBS# NC SRAM Memory Bank Enable Flash Memory Bank Enable Output Enable Write Enable Power Supply (Flash) Power Supply (SRAM) Ground Upper Byte Control (SRAM) Lower Byte Control (SRAM) No Connection 1. AMS=Most significant address ©2001 Silicon Storage Technology, Inc. S71171-05-000 8/01 520 6 Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF802 / SST32HF162 / SST32HF164 Data Sheet TABLE 3: OPERATION MODES SELECTION Mode Not Allowed Flash Read Program Erase SRAM Read VIL VIL VIL Write VIL VIL VIL Standby Flash Write Inhibit VIHC X X X Output Disable VIH VIL VIL Product Identification Software Mode VIH VIL VIL VIH X X Manufacturer’s ID (00BFH) Device ID3 A19-A1=VIL, A0=VIH (See Table 4) T3.2 520 BES#1 BEF#1 OE# WE# UBS# LBS# VIL VIH VIH X VIL VIL VIL VIL X2 VIL VIH VIH X VIH VIL VIL X X X X X X X X DQ15 to DQ8 X DOUT DIN X DQ7 to DQ0 X DOUT DIN X Address X AIN AIN Sector or Block address, XXH for Chip-Erase AIN AIN AIN AIN AIN AIN X X X X X X X VIH VIH VIH VIH VIH VIH VIHC X X VIH VIL VIH VIH VIL VIL VIL X X X X VIL X X VIH X VIH VIH VIH VIH VIL VIL VIL X X VIH X VIH X VIH VIL VIL VIH VIL VIL VIH X X X X X VIH X VIL VIH VIL VIL VIH VIL X X X X X VIH X DOUT DOUT High Z DIN DIN High Z High Z DOUT High Z DOUT DIN High Z DIN High Z High Z / DOUT High Z / DOUT High Z / DOUT High Z / DOUT High Z / DOUT High Z / DOUT High Z High Z High Z High Z High Z High Z 1. Do not apply BES#=VIL and BEF#=VIL at the same time 2. X can be VIL or VIH, but no other value. 3. Device ID 2781H for SST32HF802, 2782H for SST32HF162/164 ©2001 Silicon Storage Technology, Inc. S71171-05-000 8/01 520 7 Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF802 / SST32HF162 / SST32HF164 Data Sheet TABLE 4: SOFTWARE COMMAND SEQUENCE Command Sequence Word-Program Sector-Erase Block-Erase Chip-Erase Software ID Entry5,6 Software ID Exit Software ID Exit 1. 2. 3. 4. 1st Bus Write Cycle Addr1 5555H 5555H 5555H 5555H 5555H XXH 5555H Data2 AAH AAH AAH AAH AAH F0H AAH 2nd Bus Write Cycle Addr1 2AAAH 2AAAH 2AAAH 2AAAH 2AAAH 2AAAH Data2 55H 55H 55H 55H 55H 55H 3rd Bus Write Cycle Addr1 5555H 5555H 5555H 5555H 5555H 5555H Data2 A0H 80H 80H 80H 90H F0H 4th Bus Write Cycle Addr1 WA3 5555H 5555H 5555H Data2 Data AAH AAH AAH 5th Bus Write Cycle Addr1 2AAAH 2AAAH 2AAAH Data2 55H 55H 55H 6th Bus Write Cycle Addr1 SAX4 BAX4 5555H Data2 30H 50H 10H T4.2 520 Address format A14-A0 (Hex),Address A15 can be VIL or VIH, but no other value, for the Command sequence. DQ15-DQ8 can be VIL or VIH, but no other value, for the Command sequence. WA = Program word address SAX for Sector-Erase; uses AMS-A11 address lines BAX, for Block-Erase; uses A19-A15 address lines AMS = Most significant address AMS = A18 for SST32HF802 and A19 for SST32HF162/164 5. The device does not remain in Software Product ID Mode if powered down. 6. With AMS-A1 =0; SST Manufacturer’s ID= 00BFH, is read with A0=0, SST32HF802 Device ID = 2781H, is read with A0=1. SST32HF162/164 Device ID = 2782H, is read with A0=1. Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.) Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -20°C to +85°C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-0.5V to VDD1+0.3V Transient Voltage (