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SST34HF324G-70-4E-L3KE

SST34HF324G-70-4E-L3KE

  • 厂商:

    SST

  • 封装:

  • 描述:

    SST34HF324G-70-4E-L3KE - 32 Mbit Dual-Bank Flash 4 Mbit SRAM ComboMemory - Silicon Storage Technolo...

  • 数据手册
  • 价格&库存
SST34HF324G-70-4E-L3KE 数据手册
32 Mbit Dual-Bank Flash + 4 Mbit SRAM ComboMemory SST34HF324G SST34HF324G32Mb Dual-Bank Flash + 4 Mb SRAM MCP ComboMemory Data Sheet FEATURES: • Flash Organization: 2M x16 – 32 Mbit: 24Mbit + 8Mbit • Concurrent Operation – Read from or Write to SRAM while Erase/Program Flash • SRAM Organization: – 4 Mbit: 256K x16 • Single 2.7-3.3V Read and Write Operations • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention • Low Power Consumption: (typical values @ 5 MHz) – Active Current: Flash 10 mA (typical) SRAM 6 mA (typical) – Standby Current: 10 µA (typical) • Hardware Sector Protection (WP#) – Protects 4 outer most sectors (8 KWord) in the smaller bank by holding WP# low and unprotects by holding WP# high • Hardware Reset Pin (RST#) – Resets the internal state machine to reading data array • Sector-Erase Capability – Uniform 2 KWord sectors • Block-Erase Capability – Uniform 32 KWord blocks • Read Access Time – Flash: 70 ns – SRAM: 70 ns • Erase-Suspend / Erase-Resume Capabilities • Latched Address and Data • Fast Erase and Word-Program (typical): – Sector-Erase Time: 18 ms – Block-Erase Time: 18 ms – Chip-Erase Time: 35 ms – Program Time: 7 µs • Automatic Write Timing – Internal VPP Generation • End-of-Write Detection – Toggle Bit – Data# Polling • CMOS I/O Compatibility • JEDEC Standard Command Set • Packages Available – 48-ball LFBGA (6mm x 8mm) • All non-Pb (lead-free) devices are RoHS compliant PRODUCT DESCRIPTION The SST34HF324G ComboMemory devices integrate a 2M x16 CMOS flash memory bank with 256K x16 CMOS SRAM memory bank in a multi-chip package (MCP). These devices are fabricated using SST’s proprietary, highperformance CMOS SuperFlash technology incorporating the split-gate cell design and thick-oxide tunneling injector to attain better reliability and manufacturability compared with alternate approaches. The SST34HF324G devices are ideal for applications such as cellular phones, GPS devices, PDAs, and other portable electronic devices in a low power and small form factor system. The SuperFlash technology provides fixed Erase and Program times, independent of the number of Erase/Program cycles that have occurred. Therefore, the system software or hardware does not have to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Program times increase with accumulated Erase/Program cycles. The SST34HF324G devices offer a guaranteed endurance of 10,000 cycles. Data retention is rated at greater than 100 years. With high-performance Program operations, the flash memory banks provide a typical Pro© 2006 Silicon Storage Technology, Inc. S71310-00-000 6/06 1 gram time of 7 µsec. The entire flash memory bank can be erased and programmed word-by-word in 4 seconds (typically) for the SST34HF324G, when using interface features such as Toggle Bit or Data# Polling to indicate the completion of Program operation. To protect against inadvertent flash write, the SST34HF324G devices contain on-chip hardware and software data protection schemes. The flash and SRAM operate as two independent memory banks with respective bank enable signals. The memory bank selection is done by two bank enable signals. The SRAM bank enable signal, BES#, selects the SRAM bank. The flash memory bank enable signal, BEF#, has to be used with Software Data Protection (SDP) command sequence when controlling the Erase and Program operations in the flash memory bank. The memory banks are superimposed in the same memory address space where they share common address lines, data lines, WE# and OE# which minimize power consumption and area. See Table 3 for memory organization. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. ComboMemory is a trademark of Silicon Storage Technology, Inc. These specifications are subject to change without notice. 32 Mbit Dual-Bank Flash + 4 Mbit SRAM ComboMemory SST34HF324G Data Sheet Designed, manufactured, and tested for applications requiring low power and small form factor, the SST34HF324G are offered in both commercial and extended temperatures and a small footprint package to meet board space constraint requirements. See Figure 2 for pin assignments. Flash Program Operation These devices are programmed on a word-by-word basis. Before programming, one must ensure that the sector which is being programmed is fully erased. The Program operation is accomplished in three steps: Device Operation The SST34HF324G use BES# and BEF# to control operation of either the flash or the SRAM memory bank. When BEF# is low, the flash bank is activated for Read, Program or Erase operation. When BES# is low the SRAM is activated for Read and Write operation. BEF# and BES# cannot be at low level at the same time. If all bank enable signals are asserted, bus contention will result and the device may suffer permanent damage. All address, data, and control lines are shared by flash and SRAM memory banks which minimizes power consumption and loading. The device goes into standby when BEF# and BES# bank enables are raised to VIHC (Logic High) or when BEF# is high. 1. Software Data Protection is initiated using the three-byte load sequence. 2. Address and data are loaded. During the Program operation, the addresses are latched on the falling edge of either BEF# or WE#, whichever occurs last. The data is latched on the rising edge of either BEF# or WE#, whichever occurs first. 3. The internal Program operation is initiated after the rising edge of the fourth WE# or BEF#, whichever occurs first. The Program operation, once initiated, will be completed typically within 7 µs. See Figures 7 and 8 for WE# and BEF# controlled Program operation timing diagrams and Figure 20 for flowcharts. During the Program operation, the only valid reads are Data# Polling and Toggle Bit. During the internal Program operation, the host is free to perform additional tasks. Any commands issued during an internal Program operation are ignored. Concurrent Read/Write Operation The SST34HF324G provide the unique benefit of being able to read from or write to SRAM, while simultaneously erasing or programming the flash. This allows data alteration code to be executed from SRAM, while altering the data in flash. The following table lists all valid states. Concurrent Read/Write State Table Flash Program/Erase Program/Erase SRAM Read Write Flash Sector- /Block-Erase Operation These devices offer both Sector-Erase and Block-Erase operations. These operations allow the system to erase the devices on a sector-by-sector (or block-by-block) basis. The sector architecture is based on a uniform sector size of 2 KWord. The Block-Erase mode is based on a uniform block size of 32 KWord. The Sector-Erase operation is initiated by executing a six-byte command sequence with a Sector-Erase command (50H) and sector address (SA) in the last bus cycle. The Block-Erase operation is initiated by executing a six-byte command sequence with Block-Erase command (30H) and block address (BA) in the last bus cycle. The sector or block address is latched on the falling edge of the sixth WE# pulse, while the command (30H or 50H) is latched on the rising edge of the sixth WE# pulse. The internal Erase operation begins after the sixth WE# pulse. Any commands issued during the Block- or SectorErase operation are ignored except Erase-Suspend and Erase-Resume. See Figures 12 and 13 for timing waveforms. The device will ignore all SDP commands when an Erase or Program operation is in progress. Note that Product Identification commands use SDP; therefore, these commands will also be ignored while an Erase or Program operation is in progress. Flash Read Operation The Read operation of the SST34HF324G is controlled by BEF# and OE#, both have to be low for the system to obtain data from the outputs. BEF# is used for device selection. When BEF# is high, the chip is deselected and only standby power is consumed. OE# is the output control and is used to gate data from the output pins. The data bus is in high impedance state when either BEF# or OE# is high. Refer to the Read cycle timing diagram for further details (Figure 6). ©2006 Silicon Storage Technology, Inc. S71310-00-000 6/06 2 32 Mbit Dual-Bank Flash + 4 Mbit SRAM ComboMemory SST34HF324G Data Sheet Flash Chip-Erase Operation The SST34HF324G provide a Chip-Erase operation, which allows the user to erase all sectors/blocks to the “1” state. This is useful when the device must be quickly erased. The Chip-Erase operation is initiated by executing a sixbyte command sequence with Chip-Erase command (10H) at address 555H in the last byte sequence. The Erase operation begins with the rising edge of the sixth WE# or BEF#, whichever occurs first. During the Erase operation, the only valid read is Toggle Bits or Data# Polling. See Table 6 for the command sequence, Figure 11 for timing diagram, and Figure 23 for the flowchart. Any commands issued during the Chip-Erase operation are ignored. The actual completion of the nonvolatile write is asynchronous with the system; therefore, either a Data# Polling (DQ7) or Toggle Bit (DQ6) read may be simultaneous with the completion of the Write cycle. If this occurs, the system may possibly get an erroneous result, i.e., valid data may appear to conflict with either DQ7 or DQ6. In order to prevent spurious rejection, if an erroneous result occurs, the software routine should include a loop to read the accessed location an additional two (2) times. If both reads are valid, then the device has completed the Write cycle, otherwise the rejection is valid. Flash Data# Polling (DQ7) When the device is in an internal Program operation, any attempt to read DQ7 will produce the complement of the true data. Once the Program operation is completed, DQ7 will produce true data. During internal Erase operation, any attempt to read DQ7 will produce a ‘0’. Once the internal Erase operation is completed, DQ7 will produce a ‘1’. The Data# Polling is valid after the rising edge of fourth WE# (or BEF#) pulse for Program operation. For Sector-, Block-, or Chip-Erase, the Data# Polling is valid after the rising edge of sixth WE# (or BEF#) pulse. See Figure 9 for Data# Polling (DQ7) timing diagram and Figure 21 for a flowchart. Toggle Bits (DQ6 and DQ2) During the internal Program or Erase operation, any consecutive attempts to read DQ6 will produce alternating “1”s and “0”s, i.e., toggling between 1 and 0. When the internal Program or Erase operation is completed, the DQ6 bit will stop toggling. The device is then ready for the next operation. The toggle bit is valid after the rising edge of the fourth WE# (or BEF#) pulse for Program operations. For Sector-, Block-, or Chip-Erase, the toggle bit (DQ6) is valid after the rising edge of sixth WE# (or BEF#) pulse. DQ6 will be set to “1” if a Read operation is attempted on an Erase-suspended Sector/Block. If Program operation is initiated in a sector/block not selected in Erase-Suspend mode, DQ6 will toggle. An additional Toggle Bit is available on DQ2, which can be used in conjunction with DQ6 to check whether a particular sector is being actively erased or erase-suspended. Table 1 shows detailed status bit information. The Toggle Bit (DQ2) is valid after the rising edge of the last WE# (or BEF#) pulse of a Write operation. See Figure 10 for Toggle Bit timing diagram and Figure 21 for a flowchart. Flash Erase-Suspend/-Resume Operations The Erase-Suspend operation temporarily suspends a Sector- or Block-Erase operation thus allowing data to be read from any memory location, or program data into any sector/block that is not suspended for an Erase operation. The operation is executed by issuing a one-byte command sequence with Erase-Suspend command (B0H). The device automatically enters read mode within 20 µs after the Erase-Suspend command had been issued. Valid data can be read from any sector or block that is not suspended from an Erase operation. Reading at address location within erase-suspended sectors/blocks will output DQ2 toggling and DQ6 at “1”. While in Erase-Suspend mode, a Program operation is allowed except for the sector or block selected for Erase-Suspend. To resume Sector-Erase or Block-Erase operation which has been suspended, the system must issue an Erase-Resume command. The operation is executed by issuing a one-byte command sequence with Erase Resume command (30H) at any address in the one-byte sequence. Flash Write Operation Status Detection The SST34HF324G provides two software means to detect the completion of a Write (Program or Erase) cycle, in order to optimize the system Write cycle time. The software detection includes two status bits: Data# Polling (DQ7) and Toggle Bit (DQ6). The End-of-Write detection mode is enabled after the rising edge of WE#, which initiates the internal Program or Erase operation. ©2006 Silicon Storage Technology, Inc. S71310-00-000 6/06 3 32 Mbit Dual-Bank Flash + 4 Mbit SRAM ComboMemory SST34HF324G Data Sheet TABLE 1: Write Operation Status Status Normal Operation Standard Program Standard Erase EraseSuspend Mode Read From Erase Suspended Sector/ Block Read From Non-Erase Suspended Sector/ Block Program DQ7 DQ7# 0 1 DQ6 Toggle Toggle 1 DQ2 No Toggle Toggle Toggle Hardware Reset (RST#) The RST# pin provides a hardware method of resetting the device to read array data. When the RST# pin is held low for at least TRP, any in-progress operation will terminate and return to Read mode (see Figure 17). When no internal Program/Erase operation is in progress, a minimum period of TRHR is required after RST# is driven high before a valid Read can take place (see Figure 16). The Erase operation that has been interrupted needs to be reinitiated after the device resumes normal operation mode to ensure data integrity. See Figures 16 and 17 for timing diagrams. Software Data Protection (SDP) The SST34HF324G provide the JEDEC standard Software Data Protection scheme for all data alteration operations, i.e., Program and Erase. Any Program operation requires the inclusion of the three-byte sequence. The three-byte load sequence is used to initiate the Program operation, providing optimal protection from inadvertent Write operations, e.g., during the system power-up or power-down. Any Erase operation requires the inclusion of six-byte sequence. The SST34HF324G are shipped with the Software Data Protection permanently enabled. See Table 6 for the specific software command codes. During SDP command sequence, invalid commands will abort the device to Read mode within TRC. The contents of DQ15DQ8 are “Don’t Care” during any SDP command sequence. Data Data Data DQ7# Toggle No Toggle T1.0 1310 Note: DQ7, DQ6, and DQ2 require a valid address when reading status information. Data Protection The SST34HF324G provide both hardware and software features to protect nonvolatile data from inadvertent writes. Hardware Data Protection Noise/Glitch Protection: A WE# or BEF# pulse of less than 5 ns will not initiate a Write cycle. VDD Power Up/Down Detection: The Write operation is inhibited when VDD is less than 1.5V. Write Inhibit Mode: Forcing OE# low, BEF# high, or WE# high will inhibit the Write operation. This prevents inadvertent writes during power-up or power-down. Hardware Block Protection The SST34HF324G provide a hardware block protection which protects the outermost 8 KWord in Bank 1. The block is protected when WP# is held low. See Figure 3 for BlockProtection location. A user can disable block protection by driving WP# high thus allowing erase or program of data into the protected sectors. WP# must be held high prior to issuing the write command and remain stable until after the entire Write operation has completed. ©2006 Silicon Storage Technology, Inc. S71310-00-000 6/06 4 32 Mbit Dual-Bank Flash + 4 Mbit SRAM ComboMemory SST34HF324G Data Sheet Product Identification The Product Identification mode identifies the device as SST34HF324G and the manufacturer as SST. This mode may be accessed by software operations only. The hardware device ID Read operation, which is typically used by programmers cannot be used on this device because of the shared lines between flash and SRAM in the multi-chip package. Therefore, application of high voltage to pin A9 may damage this device. Users may use the software Product Identification operation to identify the part (i.e., using the device ID) when using multiple manufacturers in the same socket. For details, see Tables 5 and 6 for software operation, Figure 14 for the Software ID Entry and Read timing diagram and Figure 22 for the ID Entry command sequence flowchart. TABLE 2: Product Identification ADDRESS Manufacturer’s ID Device ID SST34HF324G Note: BK = Bank Address (A20-A18) SRAM Operation With BES# low and BEF# high, the SST34HF324G operates as either 256K x16 CMOS SRAM, with fully static operation requiring no external clocks or timing strobes. When BES# and BEF# are high, all memory banks are deselected and the device enters standby. Read and Write cycle times are equal. The control signals UBS# and LBS# provide access to the upper data byte and lower data byte. See Table 5 for SRAM Read and Write data byte control modes of operation. SRAM Read The SRAM Read operation of the SST34HF324G is controlled by OE# and BES#, both have to be low with WE# high for the system to obtain data from the outputs. BES# is used for SRAM bank selection. OE# is the output control and is used to gate data from the output pins. The data bus is in high impedance state when OE# is high. Refer to the Read cycle timing diagram, Figure 3, for further details. SRAM Write The SRAM Write operation of the SST34HF324G is controlled by WE# and BES#, both have to be low for the system to write to the SRAM. During the Word-Write operation, the addresses and data are referenced to the rising edge of either BES# or WE# whichever occurs first. The write time is measured from the last falling edge of BES# or WE# to the first rising edge of BES# or WE#. Refer to the Write cycle timing diagrams, Figures 4 and 5, for further details. DATA 00BFH 7353H T2.0 1310 BK0000H BK0001H Product Identification Mode Exit In order to return to the standard Read mode, the Software Product Identification mode must be exited. Exit is accomplished by issuing the Software ID Exit command sequence, which returns the device to the Read mode. This command may also be used to reset the device to the Read mode after any inadvertent transient condition that apparently causes the device to behave abnormally, e.g., not read correctly. Please note that the Software ID Exit command is ignored during an internal Program or Erase operation. See Table 6 for software command codes, Figure 15 for timing waveform and Figure 22 for a flowchart. ©2006 Silicon Storage Technology, Inc. S71310-00-000 6/06 5 32 Mbit Dual-Bank Flash + 4 Mbit SRAM ComboMemory SST34HF324G Data Sheet A20- A0 Address Buffers SuperFlash Memory (Bank 1) WP# RST# BEF# LBS# UBS# WE# OE# BES# SuperFlash Memory (Bank 2) Control Logic I/O Buffers DQ15 - DQ0 Address Buffers 4 Mbit SRAM 1310 B1.0 FIGURE 1: Functional Block Diagram ©2006 Silicon Storage Technology, Inc. S71310-00-000 6/06 6 32 Mbit Dual-Bank Flash + 4 Mbit SRAM ComboMemory SST34HF324G Data Sheet TABLE 3: Dual-Bank Memory Organization (1 of 2) SST34HF324G Block BA63 BA62 BA61 BA60 BA59 BA58 BA57 Bank 1 BA56 BA55 BA54 BA53 BA52 BA51 BA50 BA49 BA48 BA47 BA46 BA45 BA44 BA43 BA42 BA41 BA40 BA39 BA38 BA37 BA36 Bank 2 BA35 BA34 BA33 BA32 BA31 BA30 BA29 BA28 BA27 BA26 BA25 BA24 BA23 BA22 Block Size 8 KW / 16 KB 24 KW / 48 KB 32 KW / 64 KB 32 KW / 64 KB 32 KW / 64 KB 32 KW / 64 KB 32 KW / 64 KB 32 KW / 64 KB 32 KW / 64 KB 32 KW / 64 KB 32 KW / 64 KB 32 KW / 64 KB 32 KW / 64 KB 32 KW / 64 KB 32 KW / 64 KB 32 KW / 64 KB 32 KW / 64 KB 32 KW / 64 KB 32 KW / 64 KB 32 KW / 64 KB 32 KW / 64 KB 32 KW / 64 KB 32 KW / 64 KB 32 KW / 64 KB 32 KW / 64 KB 32 KW / 64 KB 32 KW / 64 KB 32 KW / 64 KB 32 KW / 64 KB 32 KW / 64 KB 32 KW / 64 KB 32 KW / 64 KB 32 KW / 64 KB 32 KW / 64 KB 32 KW / 64 KB 32 KW / 64 KB 32 KW / 64 KB 32 KW / 64 KB 32 KW / 64 KB 32 KW / 64 KB 32 KW / 64 KB 32 KW / 64 KB 32 KW / 64 KB Address Range x8 3FC000H–3FFFFFH 3F0000H–3FBFFFH 3E0000H–3EFFFFH 3D0000H–3DFFFFH 3C0000H–3CFFFFH 3B0000H–3BFFFFH 3A0000H–3AFFFFH 390000H–39FFFFH 380000H–38FFFFH 370000H–37FFFFH 360000H–36FFFFH 350000H–35FFFFH 340000H–34FFFFH 330000H–33FFFFH 320000H–32FFFFH 310000H–31FFFFH 300000H–30FFFFH 2F0000H–2FFFFFH 2E0000H–2EFFFFH 2D0000H–2DFFFFH 2C0000H–2CFFFFH 2B0000H–2BFFFFH 2A0000H—2AFFFFH 290000H—29FFFFH 280000H—28FFFFH 270000H—27FFFFH 260000H—26FFFFH 250000H—25FFFFH 240000H—24FFFFH 230000H—23FFFFH 220000H—22FFFFH 210000H—21FFFFH 200000H—20FFFFH 1F0000H—1FFFFFH 1E0000H—1EFFFFH 1D0000H—1DFFFFH 1C0000H—1CFFFFH 1B0000H—1BFFFFH 1A0000H—1AFFFFH 190000H—19FFFFH 180000H—18FFFFH 170000H—17FFFFH 160000H—16FFFFH Address Range x16 1FE000H–1FFFFFH 1F8000H–1FDFFFH 1F0000H–1F7FFFH 1E8000H–1EFFFFH 1E0000H–1E7FFFH 1D8000H–1DFFFFH 1D0000H–1D7FFFH 1C8000H–1CFFFFH 1C0000H–1C7FFFH 1B8000H–1BFFFFH 1B0000H–1B7FFFH 1A8000H–1AFFFFH 1A0000H–1A7FFFH 198000H–19FFFFH 190000H–197FFFH 188000H–18FFFFH 180000H–187FFFH 178000H–17FFFFH 170000H–177FFFH 168000H–16FFFFH 160000H–167FFFH 158000H–15FFFFH 150000H–157FFFH 148000H–14FFFFH 140000H–147FFFH 138000H–13FFFFH 130000H–137FFFH 128000H–12FFFFH 120000H–127FFFH 118000H–11FFFFH 110000H–117FFFH 108000H–10FFFFH 100000H–107FFFH 0F8000H–0FFFFFH 0F0000H–0F7FFFH 0E8000H–0EFFFFH 0E0000H–0E7FFFH 0D8000H–0DFFFFH 0D0000H–0D7FFFH 0C8000H–0CFFFFH 0C0000H–0C7FFFH 0B8000H–0BFFFFH 0B0000H–0B7FFFH ©2006 Silicon Storage Technology, Inc. S71310-00-000 6/06 7 32 Mbit Dual-Bank Flash + 4 Mbit SRAM ComboMemory SST34HF324G Data Sheet TABLE 3: Dual-Bank Memory Organization (Continued) (2 of 2) SST34HF324G Block BA21 BA20 BA19 BA18 BA17 BA16 BA15 BA14 BA13 BA12 Bank 2 BA11 BA10 BA9 BA8 BA7 BA6 BA5 BA4 BA3 BA2 BA1 BA0 Block Size 32 KW / 64 KB 32 KW / 64 KB 32 KW / 64 KB 32 KW / 64 KB 32 KW / 64 KB 32 KW / 64 KB 32 KW / 64 KB 32 KW / 64 KB 32 KW / 64 KB 32 KW / 64 KB 32 KW / 64 KB 32 KW / 64 KB 32 KW / 64 KB 32 KW / 64 KB 32 KW / 64 KB 32 KW / 64 KB 32 KW / 64 KB 32 KW / 64 KB 32 KW / 64 KB 32 KW / 64 KB 32 KW / 64 KB 32 KW / 64 KB Address Range x8 150000H—15FFFFH 140000H—14FFFFH 130000H—13FFFFH 120000H—12FFFFH 110000H—11FFFFH 100000H—10FFFFH 0F0000H—0FFFFFH 0E0000H—0EFFFFH 0D0000H—0DFFFFH 0C0000H—0CFFFFH 0B0000H—0BFFFFH 0A0000H—0AFFFFH 090000H—09FFFFH 080000H—08FFFFH 070000H—07FFFFH 060000H—06FFFFH 050000H–05FFFFH 040000H–04FFFFH 030000H–03FFFFH 020000H–02FFFFH 010000H–01FFFFH 000000H–00FFFFH Address Range x16 0A8000H–0AFFFFH 0A0000H–0A7FFFH 098000H–09FFFFH 090000H–097FFFH 088000H–08FFFFH 080000H–087FFFH 078000H–07FFFFH 070000H–077FFFH 068000H–06FFFFH 060000H–067FFFH 058000H–05FFFFH 050000H–057FFFH 048000H–04FFFFH 040000H–047FFFH 038000H–03FFFFH 030000H–037FFFH 028000H–02FFFFH 020000H–027FFFH 018000H–01FFFFH 010000H–017FFFH 008000H–00FFFFH 000000H–007FFFH T3.0 1310 TOP VIEW (balls facing down) SST34HF324G 6 5 4 A13 A9 A12 A8 A14 A10 A15 A11 A16 UBS# DQ15 VSS DQ7 DQ14 DQ13 DQ6 DQ5 DQ12 VDD DQ4 DQ2 DQ10 DQ11 DQ3 DQ0 DQ8 DQ9 DQ1 A0 BEF# OE# VSS 1310 48-lfbga L3K P1a.0 WE# RST# LBS# A19 3 BES# WP# A18 A6 A2 A20 A5 A1 2 A7 A17 A4 1 A3 A B C D E F G H FIGURE 2: Pin Assignments for 48-ball LFBGA (6mm x 8mm) ©2006 Silicon Storage Technology, Inc. S71310-00-000 6/06 8 32 Mbit Dual-Bank Flash + 4 Mbit SRAM ComboMemory SST34HF324G Data Sheet TABLE 4: Pin Description Symbol AMS1 to A0 DQ15-DQ0 Pin Name Address Inputs Data Inputs/Outputs Functions To provide Flash address, A20-A0. To provide SRAM address, A17-A0 To output data during Read cycles and receive input data during Write cycles. Data is internally latched during a flash Erase/Program cycle. The outputs are in tri-state when OE#, BES#, and BEF# are high. To activate the Flash memory bank when BEF# is low To activate the SRAM memory bank when BES# is low To gate the data output buffers To control the Write operations To enable DQ15-DQ8 To enable DQ7-DQ0 To protect and unprotect the bottom 8 KWord (4 sectors) from Erase or Program operation To Reset and return the device to Read mode 2.7-3.3V Power Supply T4.0 1310 BEF# BES# OE# WE# UBS# LBS# WP# RST# VSS Flash Memory Bank Enable SRAM Memory Bank Enable Output Enable Write Enable Upper Byte Control (SRAM) Lower Byte Control (SRAM) Write Protect Reset Ground Power Supply VDD 1. AMS = Most Significant Address ©2006 Silicon Storage Technology, Inc. S71310-00-000 6/06 9 32 Mbit Dual-Bank Flash + 4 Mbit SRAM ComboMemory SST34HF324G Data Sheet TABLE 5: Operational Modes Selection for SRAM Mode Full Standby Output Disable BEF#1 VIH VIH VIL Flash Read Flash Write Flash Erase SRAM Read VIL VIL VIL VIH BES#1,2 VIH X VIL VIL VIH X VIH X VIH X VIH X VIL VIL VIH VIL VIH VIL SRAM Write VIH VIL X VIL VIL VIH VIL Product Identification3 1. 2. 3. 4. OE#2 X X VIH X VIH VIL VIH VIH WE#2 X X VIH X VIH VIH VIL VIL LBS#2 X X X VIH X X X X UBS#2 X X X VIH X X X X VIL VIL VIH VIL VIL VIH X DQ15-0 HIGH-Z HIGH-Z HIGH-Z DOUT DIN X DOUT HIGH-Z DOUT DIN HIGH-Z DIN HIGH-Z HIGH-Z HIGH-Z DOUT DIN X DOUT DOUT HIGH-Z DIN DIN HIGH-Z DQ15-8 HIGH-Z HIGH-Z HIGH-Z DQ15-8=HIGH-Z DQ15-8=HIGH-Z X DOUT DOUT HIGH-Z DIN DIN HIGH-Z VIL VIH VIL VIH X Manufacturer’s ID4 Device ID4 T5.0 1310 Do not apply BEF# = VIL and BES# = VIL at the same time X can be VIL or VIH, but no other value. Software mode only With A20-A18 = VIL; SST Manufacturer’s ID = BFH, is read with A0=0, SST34HF324G Device ID = 7353H, is read with A0=1 ©2006 Silicon Storage Technology, Inc. S71310-00-000 6/06 10 32 Mbit Dual-Bank Flash + 4 Mbit SRAM ComboMemory SST34HF324G Data Sheet TABLE 6: Software Command Sequence Command Sequence Program Sector-Erase Block-Erase Chip-Erase Erase-Suspend Erase-Resume Software ID Entry5 1st Bus Write Cycle Addr1 555H 555H 555H 555H XXXXH XXXXH 555H 555H XXH 2nd Bus Write Cycle Addr1 2AAH 2AAH 2AAH 2AAH 3rd Bus Write Cycle Addr1 555H 555H 555H 555H 4th Bus Write Cycle Addr1 WA3 555H 555H 555H 5th Bus Write Cycle Addr1 2AAH 2AAH 2AAH 6th Bus Write Cycle Addr1 SAX4 BAX 4 Data2 AAH AAH AAH AAH B0H 30H AAH AAH F0H Data2 55H 55H 55H 55H Data2 A0H 80H 80H 80H Data2 Data AAH AAH AAH Data2 55H 55H 55H Data2 50H 30H 10H 555H 2AAH 2AAH 55H 55H BKX6 555H 555H 90H F0H Software ID Exit Software ID Exit 1. 2. 3. 4. T6.0 1310 Address format A10-A0 (Hex), Addresses A20-A11 can be VIL or VIH, but no other value, for the command sequence. DQ15-DQ8 can be VIL or VIH, but no other value, for the command sequence WA = Program word address SAX for Sector-Erase; uses A20-A11 address lines BAX for Block-Erase; uses A20-A15 address lines BKx for Bank address; uses A20-A15 address lines 5. The device does not remain in Software Product Identification mode if powered down. 6. A20-A18 = VIL Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.) Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -20°C to +85°C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +125°C D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD+0.3V Transient Voltage (
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