SGA-0163

Product Description Stanford Microdevices’ SGA-0163 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 2.1V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters with FT up to 50 GHz. This circuit uses a Darlington pair topology with resistive feedback for broadband performance as well as stability over its entire temperature range. Internally matched to 50 Ohm impedance, the SGA-0163 requires only DC blocking and bypass capacitors for external components. Small Signal Gain vs. Frequency 15 Preliminary Preliminary SGA-0163 DC-4500 MHz, Silicon Germanium Cascadeable Gain Block 10 dB Product Features • DC-4500 MHz Operation • Single Voltage Supply • Low Current Draw: 8mA at 2.1V typ. • High Output Intercept: 10 dBm typ. at 1950MHz 5 0 0 1 2 3 4 5 6 Frequency GHz Applications • Oscillator Amplifiers • Broadband Gain Blocks • IF/RF Buffer Amplifiers Sy mbol Parameters: Test Conditions: Z0 = 50 Ohms, ID = 8 mA, T = 25ºC Output Pow er at 1dB Compression f = 850 MHz f = 1950 MHz f = 2400 MHz f = 850 MHz f = 1950 MHz f = 2400 MHz f = 850 MHz f = 1950 MHz f = 2400 MHz Units dBm dBm dBm dBm dBm dBm dB dB dB MHz f = DC - 4500MHz f = DC - 4500MHz f = 850 MHz f = 1950 MHz f = 2400 MHz f = 1950 MHz dB dB dB dB V ºC/W Min. Ty p. -1.8 -1.8 -2.4 9.4 9.8 9.2 12.7 12.0 11.6 4500 1.6:1 1.3:1 17.6 18.1 18.3 4.6 2.1 255 Max. P1dB IP3 Third Order Intercept Point Pow er out per tone = -17 dBm S21 BW3dB S11 S22 S12 NF VD Rth, j-l Small Signal Gain 3dB Bandw idth Input VSWR Output VSWR Reverse Isolation Noise Figure Device Voltage Thermal Resistance (junction - lead) The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.stanfordmicro.com EDS-101494 Rev A 1 Preliminary Preliminary SGA-0163 DC-4.5 GHz 2.1V SiGe Amplifier Absolute Maximum Ratings Operation of this device above any one of these parameters may cause permanent damage. Bias Conditions should also satisfy the following expression: IDVD (max) < (TJ - TOP)/Rth,j-l Parameter Supply Current Device Voltage Operating Temperature Maximum Input Pow er Storage Temperature Range Operating Junction Temperature Value 16 6 -40 to +85 -4 -40 to +150 +150 Unit mA V ºC dBm ºC ºC Key parameters, at typical operating frequencies: Parameter 100 MHz Gain Output IP3 Output P1dB Input Return Loss Reverse Isolation Noise Figure 500 MHz Gain Output IP3 Output P1dB Input Return Loss Reverse Isolation Noise Figure 850 MHz Gain Output IP3 Output P1dB Input Return Loss Reverse Isolation Noise Figure 1950 MHz Gain Output IP3 Output P1dB Input Return Loss Reverse Isolation Noise Figure 2400 MHz Gain Output IP3 Output P1dB Input Return Loss Reverse Isolation 3500 MHz Gain Output IP3 Output P1dB Input Return Loss Reverse Isolation Ty pical 25ºC Test Condition Unit dB dBm dBm dB dB dB dB dBm dBm dB dB dB dB dBm dBm dB dB dB dB dBm dBm dB dB dB dB dBm dBm dB dB dB dBm dBm dB dB (ID = 8mA, unless otherwise noted) 12.9 9.4 -1.5 12.5 17.3 4.6 12.8 9.5 -1.5 12.7 17.4 4.6 12.7 9.4 -1.8 12.8 17.6 4.7 12.0 9.8 -1.8 12.4 18.1 4.6 11.6 9.2 -2.5 12.1 18.3 10.6 9.3 -2.7 11.8 18.5 Tone spacing = 1 MHz, Pout per tone = -17dBm Zs = 50 Ohms Tone spacing = 1 MHz, Pout per tone = -17dBm Zs = 50 Ohms Tone spacing = 1 MHz, Pout per tone = -17dBm Zs = 50 Ohms Tone spacing = 1 MHz, Pout per tone = -17dBm Zs = 50 Ohms Tone spacing = 1 MHz, Pout per tone = -17dBm Tone spacing = 1 MHz, Pout per tone = -17dBm 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 2 http://www.stanfordmicro.com EDS-101494 Rev A Preliminary Preliminary SGA-0163 DC-4.5 GHz 2.1V SiGe Amplifier Pin # 1 Function Description GND Connection to ground. For best performance use via holes (as close to ground leads as possible) to reduce lead inductance. GND Same as Pin 1 RF IN RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. Same as Pin 1 Same as Pin 1 RF output and bias pin. Bias should be supplied to this pin through an external series resistor and RF choke inductor. Because DC biasing is present on this pin, a DC blocking capacitor should be used in most applications (see application schematic). The supply side of this bias netw ork should be w ell bypassed. Device Schematic 2 3 4 5 6 GND GND RF OUT Application Schematic Recommended Bias Resistor Values Supply Voltage(Vs) Rbias (Ohms) 5V 360 7.5V 680 9V 820 12V 1.2K Cd1 Cd2 R bias Vs Note: A bias resistor is needed for stability over temperature. 50 ohm microstrip Lchoke 1,2 3 Cb1 6 4,5 Cb2 50 ohm microstrip R eference D esignator C b1 C b2 C d1 C d2 Lchoke Function D C Blocki ng D C Blocki ng D ecoupli ng D ecoupli ng AC Blocki ng 500 MH z 220 pF 220 pF 1 uF 100 pF 68 nH 850 MH z 100 pF 100 pF 1 uF 68 pF 33 nH 1950 MH z 68 pF 68 pF 1 uF 22 pF 22 nH 2400 MH z 56 pF 56 pF 1 uF 22 pF 18 nH 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 3 http://www.stanfordmicro.com EDS-101494 Rev A Preliminary Preliminary SGA-0163 DC-4.5 GHz 2.1V SiGe Amplifier 20 S21 vs. Temperature, ID = 8mA 25C -40C 85C 0 S12 vs. Temperature, ID = 8mA 25C -40C 85C 15 -10 dB 10 dB -20 -30 0 1 2 3 4 5 6 0 1 2 3 4 5 6 5 0 GHz GHz 0 -5 S11 vs. Temperature, ID = 8mA 25C -40C 85C 0 S22 vs. Temperature, ID = 8mA 25C -40C 85C -10 dB dB 0 1 2 3 4 5 6 -10 -15 -20 -25 -20 -30 -40 0 1 2 3 4 5 6 GHz GHz 15 IP3 vs. Temperature, ID = 8mA 0 -2 P1dB vs. Temperature, ID = 8mA dBm 10 dBm 5 25C -40C 85C 0 1 2 3 4 -4 -6 -8 25C -40C 85C 0 1 2 3 4 0 -10 GHz GHz 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 4 http://www.stanfordmicro.com EDS-101494 Rev A Preliminary Preliminary SGA-0163 DC-4.5 GHz 2.1V SiGe Amplifier Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. Part Number Ordering Information Part Number SGA-0163 Reel Size 7" Devices/Reel 3000 6 5 4 Note: Pin 1 is on lower left when you can read package marking Package Marking G45 1 2 3 Package Dimensions 1.30 (0.051) REF. Pad Layout 0.026 2.20 (0.087) 2.00 (0.079) 1.35 (0.053) 1.15 (0.045) 0.075 0.035 0.650 BSC (0.025) 2.20 (0.087) 1.80 (0.071) 0.10 (0.004) 0.00 (0.00) 1.00 (0.039) 0.80 (0.031) 0.25 (0.010) 0.15 (0.006) 0.016 0.425 (0.017) TYP. 0.20 (0.0080 0.10 (0.004) 0.30 REF. 10° 0.30 (0.012) 0.10 (0.0040 DIMENSIONS ARE IN INCHES [MM] 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 5 http://www.stanfordmicro.com EDS-101494 Rev A