SGA-3263

Product Description Stanford Microdevices’ SGA-3263 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. At 850 Mhz and 35mA , the SGA-3263 typically provides +26.2 dBm output IP3, 14.4 dB of gain, and +11.6 dBm of 1dB compressed power using a single positive voltage supply. Only 2 DC-blocking capacitors, a bias resistor and an optional RF choke are required for operation. Gain & Return Loss vs. Frequency VD= 2.6 V, ID= 35 mA (Typ.) Preliminary SGA-3263 DC-5500 MHz, Cascadable SiGe HBT MMIC Amplifier Product Features • High Gain : 13.6 dB at 1950 MHz • Cascadable 50 Ohm • Patented SiGe Technology 20 15 Gain (dB) 10 5 ORL GAIN 0 -10 IRL -20 -30 Return Loss (dB) • Operates From Single Supply • Low Thermal Resistance Package Applications • Cellular, PCS, CDPD • Wireless Data, SONET • Satellite Units dB dB dB dBm dBm dBm dBm M Hz dB dB dB V °C/W 1950 M Hz 1950 M Hz 1950 M Hz 2.3 Frequency 850 M Hz 1950 M Hz 2400 M Hz 850 M Hz 1950 M Hz 850 M Hz 1950 M Hz Min. 13.0 Ty p. 14.4 13.6 13.3 11.6 10.9 26.2 24.1 5500 20.3 21.5 3.8 2.6 255 2.9 Max. 15.8 TL=+25ºC -40 2 3 4 Frequency (GHz) 5 6 0 0 1 Sy mbol G P1dB OIP3 Parameter Small Signal Gain Output Pow er at 1dB Compression Output Third Order Intercept Point (Pow er out per tone = -5dBm) Bandw idth Determined by Return Loss (