SGA-7489

Product Description Stanford Microdevices’ SGA-7489 is a high performance cascadeable 50-ohm amplifier designed for operation at 5 Volts DC. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters with FT up to 50 GHz. This circuit uses a darlington pair topology with resistive feedback for broadband performance as well as stability over its entire temperature range. Internally matched to 50 ohm impedance, the SGA-7489 requires only DC blocking and bypass capacitors and a bias inductor for external components. Frequency performance may be extended using the 2 GHz application circuit shown on sheet 5. Preliminary SGA-7489 DC-3000 MHz Silicon Germanium HBT Cascadeable Gain Block S21 vs. Frequency, T=+25C, Id =130 mA 25 20 Product Features • DC-3000 MHz Operation • Single Voltage Supply • High Output Intercept: +36 dBm typ. at 850 MHz • Low Noise Figure: 2.9 dB typ. at 850 MHz Applications • Oscillator Amplifiers • PA for Low / Medium Power Applications • IF/ RF Buffer Amplifier • Drivers for CATV Amplifiers • LO Driver Amplifier Units Min. Ty p. 22.8 22.6 22.4 20.3* 38.6 37.2 36.0 35.7* 23.7 23.0 22.0 18.3* 3000 11.8 9.3 25.8 25.8 25.4 22.7* 2.9 5.0 82 * Using 2 GHz App.Ckt. (sheet 5) Max. Notes * Using 2 GHz App.Ckt. (sheet 5) * Using 2 GHz App.Ckt. (sheet 5) * Using 2 GHz App.Ckt. (sheet 5) dBm dBm dBm dBm dBm dBm dBm dBm dB dB dB dB MHz S21 (dB) 15 10 5 0 0 500 1000 1500 2000 2500 3000 Frequency (MHz) Sy mbol Parameters: Test Conditions: Z0 = 50 Ohms, ID = 130 mA, T = 25oC Output Pow er at 1dB Compression f f f f f f f f f f f f = = = = = = = = = = = = P1dB 100 MHz 500 MHz 850 MHz 1950 MHz * 100 MHz 500 MHz 850 MHz 1950 MHz * 100 MHz 500 MHz 850 MHz 1950 MHz * IP3 Third Order Intercept Point Pow er out per tone = 0 dBm S21 Bandw idth S11 S22 S12 NF VD Rth,j-l Small Signal Gain (Determined by S11, S22 Values) Input Return Loss Output Return Loss f = DC-3000 MHz f = DC-3000 MHz f f f f = = = = 100 MHz 500 MHz 850 MHz 1950 MHz * dB dB dB dB dB dB dB V o Reverse Isolation Noise Figure, ZS = 50 Ohms Device Voltage Thermal Resistance (junction - lead) f = 850 MHz C/W The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2001 Stanford Microdevices, Inc. All worldwide rights reserved. 726 Palomar Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 1 http://www.stanfordmicro.com EDS-101801 Rev A Preliminary Preliminary SGA-7489 DC-3000 MHz 5V SiGe Amplifier Absolute Maximum Ratings Operation of this device above any one of these parameters may cause permanent damage. Bias Conditions should also satisfy the following expression: IDVD (max) < (TJ - TOP)/Rth, j-l Parameter Supply Current Operating Temperature Maximum Input Pow er Storage Temperature Range Operating Junction Temperature Value 160 (approx.) -40 to +85 +10 -40 to +150 +150 Unit mA C dBm C C Key parameters, at typical operating frequencies: Parameter 100 MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Reverse Isolation 500 MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Reverse Isolation 850 MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Reverse Isolation 1950 MHz Gain Noise Figure Output IP3 * Output P1dB * Input Return Loss Reverse Isolation 2400 MHz Gain Noise Figure Output IP3 * Output P1dB * Input Return Loss Reverse Isolation Ty pical 25 C o Test Condition Unit dB dB dBm dBm dB dB dB dB dBm dBm dB dB dB dB dBm dBm dB dB dB dB dBm dBm dB dB dB dB dBm dBm dB dB (ID = 130 mA, unless otherwise noted) 23.7 2.7 38.6 22.8 15.0 25.8 23.0 2.7 37.2 22.6 16.2 25.8 22.0 2.9 36.0 22.4 17.3 25.4 18.2 --33.3 19.9 15.5 22.9 16.9 --31.9 18.9 13.8 21.7 ZS = 50 Ohms Tone spacing = 1 MHz, Pout per tone = 0 dBm ZS = 50 Ohms Tone spacing = 1 MHz, Pout per tone = 0 dBm ZS = 50 Ohms Tone spacing = 1 MHz, Pout per tone = 0 dBm ZS = 50 Ohms Tone spacing = 1 MHz, Pout per tone = 0 dBm ZS = 50 Ohms Tone spacing = 1 MHz, Pout per tone = 0 dBm * NOTE: P1dB and IP3 @1950,2400 MHz may be improved by using the tuned circuit shown on sheet 5 726 Palomar Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 2 http://www.stanfordmicro.com EDS-101801 Rev A Preliminary Preliminary SGA-7489 DC-3000 MHz 5V SiGe Amplifier Pin # 1 Description RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. GND Connection to ground. Use via holes for best performance to reduce lead inductance. Place vias as close to ground leads as possible. RF OUT/Vcc RF output and bias pin. Bias should be supplied to this pin through an external series resistor and RF choke inductor. Because DC biasing is present on this pin, a DC blocking capacitor should be used in most applications (see application schematic). The supply side of the bias netw ork should be w ell bypassed. GND Same as Pin 2. Application Circuit Component Description Function RF IN Device Schematic 2 3 4 Recommended Bias Resistor Values Supply Voltage(Vs) Rbias (Ohms) Pow er Rating (W) 7V 15 0.5 8V 22 0.5 9V 30 1.0 Choose circuit components such that the following conditions are met at the minimum operational frequency : XLb >= 250 Ohms XCc