SNA-576-TR2

Product Description Stanford Microdevices’ SNA-576 is a GaAs monolithic broadband amplifier housed in a low-cost stripline ceramic package. This amplifier provides 19dB of gain when biased at 70mA and 5.0V. External DC decoupling capacitors determine low frequency response. The use of an external resistor allows for bias flexibility and stability. These unconditionally stable amplifiers are designed for use as general purpose 50 ohm gain blocks. Also available in chip form (SNA-500), its small size (0.4mm x 0.4mm) and gold metallization make it an ideal choice for use in hybrid circuits. The SNA-576 is available in tape and reel at 1000, 3000 and 5000 devices per reel. SNA-576 DC-3 GHz, Cascadable GaAs MMIC Amplifier Output Power vs. Frequency 22 20 18 Product Features • Cascadable 50 Ohm Gain Block • 19dB Gain, +18dBm P1dB • 1.5:1 Input and Output VSWR • Operates From Single Supply • Low Cost Stripline Mount Ceramic Package • Hermetically Sealed 50 Ohm Gain Blocks Applications • Narrow and Broadband Linear Amplifiers • Commercial and Industrial Applications dB 16 14 12 0.1 1 2 3 4 5 GHz Electrical Specifications at Ta = 25C Sym bol P a r a m e t e r s : T e s t C o n d itio n s : Id = 7 0 m A , Z 0 = 5 0 O h m s S m a ll S ig n a l P o w e r G a in f = 0 .1 -1 .0 G H z f = 1 .0 -2 .0 G H z f = 2 .0 -3 .0 G H z f = 0 .1 -2 .0 G H z U n its dB dB dB dB GHz f = 2 .0 G H z f = 2 .0 G H z f = 0 .1 -8 .0 G H z f = 2 .0 G H z f = 2 .0 G H z f = 0 .1 -8 .0 G H z dBm psec dB V d B /d e g C m V /d e g C 4 .3 dBm dB M in . 1 8 .0 1 6 .0 1 5 .0 Ty p . 2 0 .0 1 8 .0 1 7 .0 + /- 1 .0 3 .0 1 8 .0 4 .2 1 .5 :1 3 4 .0 120 2 2 .0 5 .0 -0 .0 0 2 7 -5 .0 5 .7 5 .0 M ax. G P G F G a in F la tn e s s 3 d B B a n d w id th O u tp u t P o w e r a t 1 d B C o m p r e s s io n N o is e F ig u r e In p u t / O u tp u t T h ir d O r d e r In te r c e p t P o in t G r o u p D e la y R e v e r s e Is o la tio n D e v ic e V o lta g e D e v ic e G a i n T e m p e ra t u r e C o e ff ic ie n t D e v ic e V o lt a g e T e m p e r a t u re C o e ff ic ie n t BW 3dB P 1dB NF VSW R IP T 3 D IS O L VD d G /d T d V /d T The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com 5-73 SNA-576 DC-3 GHz Cascadable MMIC Amplifier Typical Performance at 25° C (Vds = 5.0V, Ids = 70mA) |S11| vs. Frequency 0 -5 22 20 18 |S21| vs. Frequency dB -10 -15 -20 0.1 1 2 3 4 5 dB 16 14 12 0.1 1 2 3 4 5 GHz GHz |S12| vs. Frequency 0 -5 -10 0 -5 |S22| vs. Frequency dB dB -15 -20 -25 0.1 1 2 3 4 5 -10 -15 -20 0.1 1 2 3 4 5 GHz GHz 50 Ohm Gain Blocks Noise Figure vs. Frequency 6 38 36 5 34 TOIP vs. Frequency dB 4 dBm 32 30 3 0.1 1.0 2 3 4 5 28 0.1 1 2 3 4 5 GHz GHz Typical S-Parameters Vds = 5.0V, Ids = 70mA Freq GHz .100 .250 .500 1.00 1.50 2.00 2.50 3.00 |S11| 0.219 0.146 0.179 0.190 0.183 0.153 0.106 0.050 S11 Ang 156 173 110 51 -7 -56 -106 -153 |S21| 10.104 10.087 8.744 8.302 7.747 7.348 6.651 5.943 S21 Ang -76 -44 134 92 46 5 -40 -78 |S12| 0.065 0.078 0.079 0.080 0.081 0.083 0.085 0.087 S12 Ang 106 147 -26 -49 -76 -100 -128 -154 |S22| 0.178 0.110 0.152 0.180 0.212 0.230 0.233 0.219 S22 Ang -124 -152 131 85 33 -13 -63 -107 (S-Parameters include the effects of two 1.0 mil diameter bond wires, each 20 mils long, connected to the gate and drain pads on the die) 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com 5-74 SNA-576 DC-3 GHz Cascadable MMIC Amplifier Absolute Maximum Ratings P a r am e te r A b s o lu te M a xim u m Part Number Ordering Information Part Number Devices Per Reel Reel Size SNA-576-TR1 D e vic e Cu rren t Po w e r D is sip a tio n R F In pu t P ow e r Ju n ctio n Tem p era tu re O p e ratin g Te m p e ra tu re Sto ra g e Te m p e ra ture 1 00 m A 5 60 m W 2 00 m W +2 0 0 C -4 5 C to +8 5C -6 5 C to +1 50 C SNA-576-TR2 SNA-576-TR3 1000 3000 5000 7" 13" 13" Recommended Bias Resistor Values Supply Voltage(Vs) Rbias (Ohms) 5V * 7.5V 36 9V 57 12V 100 15V 143 20V 214 Notes: 1. Operation of this device above any one of these parameters may cause permanent damage. * Needs active biasing for constant current source MTTF vs. Temperature @ Id = 70mA Lead Temperature Junction Temperature +155C MTTF (hrs) 6.0 +45C 1000000 +80C +190C 100000 +110C +220C 10000 5.0 50 Ohm Gain Blocks Thermal Resistance (Lead-Junction): 315° C/W Typical Biasing Configuration Pin Designation 1 2 3 4 RF in GND RF out and Bias GND Typical Performance at 25° C Power Gain vs. Device Current 21 20 19 18 17 16 15 14 13 12 0 1 2 3 4 Device Voltage vs. Current - Id 6 5.5 dB Vdc 80mA 70mA 60mA 50mA 5 4.5 4 40mA 5 65 70 75 80 85 90 95 GHz mA 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com 5-75