SNA-676

Product Description Stanford Microdevices’ SNA-676 is a high-performance GaAs Heterojunction Bipolar Transistor (MMIC) housed in a low-cost surface mountable stripline package. A Darlington configuration is utilized for broadband performance to 6.5 GHz. These unconditionally stable amplifiers provide 11dB of gain and +18dBm of P1dB when biased at 5.7V and 70mA. This MMIC requires only a single suply voltage. The use of an external resistor allows for bias flexibility and stability. Also available in chip form (SNA-600), its small size (0.4mm x 0.4mm) and gold metallization make it an ideal choice for use in hybrid circuits. The SNA-676 is available in tape and reel at 1000, 3000 and 5000 devices per reel. SNA-676 DC-6.5 GHz, Cascadable GaAs MMIC Amplifier Output Power vs. Frequency 22 20 18 Product Features • Cascadable 50 Ohm Gain Block • 11dB Gain, +18dBm P1dB • High Linearity, +36dBm TOIP Typ. • 1.5:1 Input and Output VSWR • Operates From a Single DC Supply • Low Cost Stripline Mount Ceramic Package 50 Ohm Gain Blocks Applications • Narrow and Broadband Linear Amplifiers • Commercial and Industrial Applications dBm 16 14 12 0.1 1 2 3 4 5 6 7 8 GHz Electrical Specifications at Ta = 25C Sym bol P a r a m e te r s : T e s t C o n d itio n s : Id = 7 0 m A , Z 0 = 5 0 O h m s S m a ll S ig n a l G a in 3 d B B a n d w id th O u tp u t P o w e r a t 1 d B C o m p re s s io n f = 0 .1 -2 .0 G H z f = 2 .0 -6 .5 G H z f = 0 .1 -4 .0 G H z f = 4 .0 -6 .5 G H z f = 0 .1 -6 .5 G H z f = 0 .1 -2 .0 G H z f = 2 .0 G H z f = 0 .1 -6 .5 G H z dBm psec dB V d B /d e g C m V /d e g C 4 .8 f = 0 .1 -4 .0 G H z f = 4 .0 -6 .5 G H z U n its dB dB GHz dBm M in . 9 .0 8 .0 Ty p . 11 .0 9 .0 6 .5 1 8 .0 1 6 .0 7 .5 8 .5 1 .5 :1 3 6 .0 120 1 7 .0 5 .7 -0 .0 0 2 3 -5 .0 6 .8 M ax. G P BW 3dB P 1dB NF VSWR IP T 3 N o is e F ig u r e In p u t / O u tp u t T h i r d O r d e r I n t e r c e p t P o in t G r o u p D e la y R e v e r s e Is o la tio n D e v ic e V o lta g e D e v i c e G a i n T e m p e r a t u r e C o e ff i c i e n t D e v i c e V o l t a g e T e m p e r a t u r e C o e ff i c i e n t dB D IS O L VD d G /d T d V /d T The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com 5-89 SNA-676 DC-6.5 GHz Cascadable MMIC Amplifier Typical Performance at 25° C (Vds = 5.7V, Ids = 70mA) |S11| vs. Frequency -5 -10 -15 12 10 |S21| vs. Frequency dB -20 -25 -30 0.1 1 2 3 4 5 6 7 8 dB 8 6 4 0.1 1 2 3 4 5 6 7 8 GHz GHz |S12| vs. Frequency 0 -5 -10 -5 -10 -15 |S22| vs. Frequency dB -15 -20 -25 0.1 1 2 3 4 5 6 7 8 dB -20 -25 -30 0.1 1 2 3 4 5 6 7 8 GHz GHz 50 Ohm Gain Blocks Noise Figure vs. Frequency 10 9 8 38 36 34 TOIP vs. Frequency dB dB 7 6 5 0.1 1 2 3 4 5 6 6.5 32 30 28 0.1 1 2 3 4 5 6 7 8 GHz GHz Typical S-Parameters Vds = 5.7V, Ids = 70mA F req GHz |S 1 1 | S 11 Ang |S 2 1 | S21 Ang |S 1 2 | S12 Ang |S 2 2 | S22 Ang .1 0 0 .2 5 0 .5 0 0 1 .0 0 1 .5 0 2 .0 0 2 .5 0 3 .0 0 3 .5 0 4 .0 0 4 .5 0 5 .0 0 5 .5 0 6 .0 0 6 .5 0 0 .1 5 2 0 .1 4 6 0 .1 3 1 0 .11 0 0 .0 8 5 0 .0 7 2 0 .0 7 7 0 .1 0 7 0 .1 4 3 0 .1 6 8 0 .1 7 3 0 .1 4 1 0 .0 7 9 0 .0 3 8 0 .0 7 9 -1 4 -2 5 -4 2 -8 3 -1 3 0 178 109 52 0 -4 4 -9 0 -1 4 2 169 62 -5 7 3 .6 2 4 3 .6 0 2 3 .5 4 9 3 .5 8 3 3 .5 6 7 3 .5 4 1 3 .5 1 2 3 .4 2 7 3 .4 0 1 3 .2 9 0 3 .2 8 0 3 .1 0 4 2 .9 2 9 2 .6 5 8 2 .3 5 9 152 145 140 102 59 21 -2 2 -6 4 -1 0 6 -1 4 4 175 128 87 47 1 0 .0 9 5 0 .1 3 9 0 .1 4 9 0 .1 4 8 0 .1 4 6 0 .1 4 5 0 .1 4 1 0 .1 3 6 0 .1 3 2 0 .1 2 8 0 .1 2 4 0 .1 2 4 0 .1 2 3 0 .1 2 1 0 .11 9 -4 -1 0 -3 0 -5 9 -9 0 -1 2 0 -1 5 2 180 147 11 8 88 60 29 0 -3 5 0 .1 9 8 0 .2 0 5 0 .2 4 7 0 .2 2 2 0 .1 9 8 0 .1 9 3 0 .2 0 3 0 .2 2 2 0 .2 4 8 0 .2 7 0 0 .2 8 8 0 .2 8 5 0 .2 7 6 0 .2 5 9 0 .3 2 2 -4 -2 6 -5 6 -11 2 -1 7 9 120 54 1 -6 0 -11 7 177 11 7 51 -1 0 -7 6 (S-Parameters include the effects of two 1.0 mil diameter bond wires, each 20 mils long, connected to the gate and drain pads on the die) 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com 5-90 SNA-676 DC-6.5 GHz Cascadable MMIC Amplifier Absolute Maximum Ratings P a r am e te r A b s o lu te M a xim u m Part Number Ordering Information Part Number Devices Per Reel Reel Size SNA-676-TR1 D e vic e Cu rren t Po w e r D is sip a tio n R F In pu t P ow e r Ju n ctio n Tem p era tu re O p e ratin g Te m p e ra tu re Sto ra g e Te m p e ra ture 11 0m A 7 00 m W 2 00 m W +2 0 0 C -4 5 C to +8 5C -6 5 C to +1 50 C SNA-676-TR2 SNA-676-TR3 1000 3000 5000 7" 13" 13" R e c o m m e n d e d B ia s R e s is to r Va lu e s Notes: 1. Operation of this device above any one of these parameters may cause permanent damage. Suppl y Volta g e(Vs) R bias (O hm s) 5V * 7.5V 24 9V 46 12V 89 15V 131 20V 203 ** Not Recommended MTTF vs. Temperature @ Id = 70mA Lead Temperature Junction Temperature +155C MTTF (hrs) +55C 1000000 +90C +190C 100000 +120C +220C 10000 50 Ohm Gain Blocks Thermal Resistance (Lead-Junction): 250° C/W Typical Biasing Configuration Pin Designation 1 2 3 4 RF in GND RF out and Bias GND Typical Performance at 25° C Power Gain vs. Device Current 20mA Steps 12.0 11.5 11.0 10.5 10.0 9.5 9.0 8.5 8.0 0.1 1.0 2.0 3.0 4.0 5.0 6.0 5.5 5 50 55 60 65 70 75 80 80mA Device Voltage vs. Id 7 6.5 dB 40mA Vdc 6 GHz mA 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com 5-91