ST2304

ST2304 N Channel Enhancement Mode MOSFET 3.2A DESCRIPTION ST2304 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. FEATURE PIN CONFIGURATION SOT-23-3L l 3 l D l G S l 1 2 l 1.Gate 2.Source 30V/3.2A, RDS(ON) = 50m-ohm (Typ.) @VGS = 4.5V 30V/2.0A, RDS(ON) = 65m-ohm @VGS = 2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design 3.Drain PART MARKING SOT-23-3L 3 04YA 1 Y: Year Code 2 A: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2304 2005. V1 ST2304 N Channel Enhancement Mode MOSFET 3.2A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V ID 3.2 2.6 A IDM 10 A Continuous Source Current (Diode Conduction) IS 1.25 A TA=25℃ TA=70℃ PD 1.25 0.8 W TJ 150 ℃ Storgae Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 100 Continuous Drain CurrentTJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Power Dissipation Operation Junction Temperature ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2304 2005. V1 ST2304 N Channel Enhancement Mode MOSFET 3.2A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min V(BR)DSS VGS=0V,ID=250uA 30 VGS(th) VDS=VGS,ID=250uA 1.0 IGSS Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current IDSS V 2.5 V VDS=0V,VGS=±20V ±100 nA VDS=30V,VGS=1.0V 1 VDS=30V,VGS=0V TJ=55℃ 10 Drain-source On-Resistance RDS(on) VGS=10V,ID=3.2A VGS=4.5V,ID=2.0A Forward Transconductance gfs VDS=4.5V,ID=2.5V 4.6 Diode Forward Voltage VSD IS=1.25A,VGS=0V 0.82 1.0 4.5 10 0.050 0.058 0.065 0.075 uA Ω S V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Turn-On Time td(on) Turn-Off Time td(off) Crss tr tf VDS=15V VGS=10V ID≡2.5A VDS=15V VGS=0V F=1MHz VDD=15V RL=15Ω ID=1.0A VGEN=10V RG=6Ω 0.8 nC 1.0 240 110 pF 17 8.0 20 12 30 17 35 8.0 20 nS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2304 2005. V1 ST2304 N Channel Enhancement Mode MOSFET 3.2A TYPICAL CHARACTERICTICS (25℃ Unless noted) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2304 2005. V1 ST2304 N Channel Enhancement Mode MOSFET 3.2A TYPICAL CHARACTERICTICS (25℃ Unless noted) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2304 2005. V1 ST2304 N Channel Enhancement Mode MOSFET 3.2A SOT-23-3L PACKAGE OUTLINE STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2304 2005. V1