ST3400S23RG

ST3400S23RG N Channel Enhancement Mode MOSFET 5.8A DESCRIPTION The ST3400S23RG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high side switching. FEATURE PIN CONFIGURATION SOT-23-3L
3
D
G S 1 2 1.Gate 2.Source


3.Drain 30V/5.8A, RDS(ON) = 28mΩ (Typ.) @VGS = 10V 30V/4.8A, RDS(ON) = 33mΩ @VGS = 4.5V 30V/4.0A, RDS(ON) = 40mΩ @VGS = 2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design PART MARKING SOT-23-3L 3 A0YA 1 Y: Year Code 2 A: Week Code 1 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stnasontech.com STN3400S23RG 2006. V1 ST3400S23RG N Channel Enhancement Mode MOSFET 5.8A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±12 V ID 5.8 3.5 A IDM 25 A Continuous Source Current (Diode Conduction) IS 1.7 A TA=25℃ TA=70℃ PD 2.0 1.3 W TJ 150 ℃ Storgae Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 90 Continuous Drain CurrentTJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Power Dissipation Operation Junction Temperature ℃/W 2 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stnasontech.com STN3400S23RG 2006. V1 ST3400S23RG N Channel Enhancement Mode MOSFET 5.8A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max V(BR)DSS VGS=0V,ID=250uA 30 VGS(th) VDS=VGS,ID=250uA 0.4 IGSS Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current IDSS V 1.0 V VDS=0V,VGS=±12V ±100 nA VDS=24V,VGS=0V 1 VDS=24V,VGS=0V TJ=55℃ 10 uA Drain-source On-Resistance RDS(on) VGS=10V,ID=5.8A VGS=4.5V,ID=4.8A VGS=2.5V,ID=4.0A 28 33 40 mΩ Forward Transconductance gfs VDS=4.5V,ID=5.8A 12 S Diode Forward Voltage VSD IS=1.7A,VGS=0V 0.8 1.2 9.7 18 V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Output Capacitance Ciss Coss Reverse Transfer Capacitance Crss Turn-On Time Turn-Off Time VDS=15V VGS=10V ID≡6.7A td(on) tr td(off) tf 1.6 nC 3.1 VDS=15V VGS=0V F=1MHz 450 240 VDD=15V RL=15Ω ID=1.0A VGEN=10V RG=6Ω 7 15 10 20 20 40 11 20 pF 38 nS 3 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stnasontech.com STN3400S23RG 2006. V1 ST3400S23RG N Channel Enhancement Mode MOSFET 5.8A TYPICAL CHARACTERICTICS (25℃ Unless noted) 4 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stnasontech.com STN3400S23RG 2006. V1 ST3400S23RG N Channel Enhancement Mode MOSFET 5.8A TYPICAL CHARACTERICTICS (25℃ Unless noted) 5 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stnasontech.com STN3400S23RG 2006. V1 ST3400S23RG N Channel Enhancement Mode MOSFET 5.8A SOT-23-3L PACKAGE OUTLINE 6 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stnasontech.com STN3400S23RG 2006. V1