1530-8

SD1530-08 RF & MICROWAVE TRANSISTORS A VIONICS APPLICATIONS . . . . . . . . . DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS 40 WATTS (typ.) IFF 1030 - 1090 MHz 35 WATTS (min.) DME 1025 - 1150 MHz 25 WATTS (typ.) TACAN 960 - 1215 MHz 9.0 dB MIN. GAIN REFRACTORY GOLD METALLIZATION EMITTER BALLASTING AND LOW THERMAL RESISTANCE FOR RELIABILITY AND RUGGEDNESS INFINITE LOAD VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS INPUT MATCHED, COMMON BASE CONFIGURATION .250 SQ. 2LFL (M105 ) hermetically sealed ORDER CODE SD1530-08 BRAND ING 1530-8 PIN CONNECTION DESCRIPTION The SD1530-08 is a gold metallized silicon, NPN power transistor designed for applications requiring high peak power and low duty cycles such as IFF, DME and TACAN. The SD1530-08 is packaged in the .250” input matched hermetic stripline flange package resulting in improved broadband performance and a low thermal resistance. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter VCBO VCEO VEBO IC PDISS TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 65 65 3.5 2.6 87.5 +200 − 65 to +150 V V V A W °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance August 1993 2.0 °C/W 1/5 SD1530-08 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BV CES BVEBO ICES hFE IC = 10 mA IC = 25 mA IE = 1 mA VCE = 50 V VCE = 5 V IE = 0 mA VBE = 0 V IC = 0 mA IE = 0 mA IC = 500 mA 65 65 3.5 — 10 — — — — — — — — 5 200 V V V mA DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit POUT PG ηc Note: f = 1025 − 1150 MHz PIN = 5.0 W f = 1025 − 1150 MHz PIN = 5.0 W f = 1025 − 1150 MHz PIN = 5.0 W VCE = 50 V VCE = 50 V VCE = 50 V 35 8.5 30 — — — — — — W dB % Pulse W idth = 10 µ Sec, Duty Cycle = 1% T his device is suitable for use under other pulse wi dth/duty cycle conditi ons. Please contact the factory for specific applications assistance. TYPICAL PERFORMANCE POWER OUTPUT vs POWER INPUT 2/5 SD1530-08 I MPEDANCE DATA TYPICAL INPUT IMPEDANCE TYPICAL COLLECTOR LOAD IMPEDANCE 3/5 SD1530-08 TEST CIRCUIT AND PC BOARD LAYOUT C1, C3 : 0.6 - 4.5pF, Johanson Gigatrim C2 : 470pF ATC Chip Capacitor C4 : 1000pF ATC Chip Capacitor C5 : 1000µF, 63V, Electrolytic Capacitor L1 Z1 Z2 Z3 : 4.5 Turns #22 AWG Wire : 500mm Line : .450” Wire Line Length .600” : 50 Ω Shunt Line Z4 Z5 Z6 Z7 Z8 Z9 : : : : : : .110” x .490” .250” x .700” .250” x .225” Ground .185” x .360” .180” x .120” 4/5 SD1530-08 P ACKAGE MECHANICAL DATA Ref.: Dwg. No.12-0105 rev. B Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5