SD1897
RF & MICROWAVE TRANSISTORS 1 .65 GHz SATCOM APPLICATIONS
. . . . .
1.65 GHz 28 VOLTS CLASS C OPERATION COMMON BASE P OUT = 10 W MIN. WITH 11.0 dB GAIN
.250 x .320 2LFL (M170) epoxy sealed ORDER CODE SD1897 BRANDING 1897
PIN CONNECTION
DESCRIPTION The SD1897 is a 28 V Class C silicon NPN transistor designed for INMARSAT and other 1.65 GHz SATCOM applications. A gold metallized emitterballasted die geometry is employed providing high gain and efficiency while ensuring long term reliability and ruggedness under severe operating conditions. SD1897 is packaged in a cost-effective epoxy sealed housing. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol Parameter Value Unit
1. Collector 2. Emitter
3. Base
VCBO VCEO VEBO IC PDISS TJ T STG
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature
45 15 3.5 2.3 29 +200 − 65 to +150
V V V A W °C °C
THERMAL DATA RTH(j-c)
July 1993
Junction-Case Thermal Resistance
6.0
°C/W
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SD1897
E LECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC
Symbol Test Conditions Value Min. Typ. Max. Unit
BVCBO BVCEO BVEBO hFE DYNAMIC
Symbol
IC = 3mA IC = 3mA IE = 3mA VCE = 5V
IE = 0mA IB = 0mA IC = 0mA IC = 600mA
45 12 3.5 15
— — — —
— — — 150
V V V —
Test Conditions
Value Min. Typ. Max.
Unit
POUT GP ηc
f = 1.65 GHz f = 1.65 GHz f = 1.65 GHz
PIN = 0.8 W PIN = 0.8 W PIN = 0.8 W
VCE = 28 V VCE = 28 V VCE = 28 V
10 11 48
— — —
— — —
W dB %
TYPICAL PERFORMANCE
POWER OUTPUT vs POWER INPUT
EFFICIENCY vs POWER INPUT
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SD1897
IMPEDANCE DATA
TYPICAL INPUT IMPEDANCE ZIN FREQ. 1600 MHz TYPICAL COLLECTOR LOAD IMPEDANCE ZCL 1650 MHz POUT = 10 W VCE = 28 V PIN = 0.8 W ZIN (Ω) 22.0 + j 23.0 28.0 + j 18.0 ZCL (Ω) 3.1 + j 4.0 3.0 + j 2.0
T EST CIRCUIT
C1, C2 : 0.4 - 2.5pF Johanson Variable Capacitor C3 : 100pF Chip Capacitor ATC C4 : Suppression Filters CDI 9900381-6004 L1, L2 : 4 Turns, Choke #28 AWG .080” I.D. Substrate: Er = 10.2, Height .050”, 1 Oz. Cu. All Dimensions in mm unless otherwise specified
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SD1897
P ACKAGE MECHANICAL DATA Ref.: Dwg. No.12-0170
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
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