1N5821

® 1N582x LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS IF(AV) VRRM Tj VF (max) FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP DO-201AD DESCRIPTION Axial Power Schottky rectifier suited for Switch Mode Power Supplies and high frequency DC to DC converters. Packaged in DO-201AD these devices are intended for use in low voltage, high frequency inverters, free wheeling, polarity protection and small battery chargers. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) IF(AV) Parameter Repetitive peak reverse voltage RMS forward current Average forward current TL = 100°C δ = 0.5 TL = 110°C δ = 0.5 IFSM Tstg Tj dV/dt *: Surge non repetitive forward current Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage tp = 10 ms Sinusoidal 3 3 80 - 65 to + 150 150 10000 Value 1N5820 1N5821 1N5822 20 30 40 10 3 Unit V A A A A °C °C V/µs 3A 40 V 150°C 0.475 V dPtot 1 < thermal runaway condition for a diode on its own heatsink dTj Rth(j−a) July 1999 - Ed: 2A 1/5 1N582x THERMAL RESISTANCES Symbol Rth (j-a) Rth (j-l) Junction to ambient Junction to lead Parameter Lead length = 10 mm Lead length = 10 mm Value 80 25 Unit °C/W °C/W STATIC ELECTRICAL CHARACTERISTICS Symbol IR * Parameter Reverse leakage current Forward voltage drop Tests Conditions Tj = 25°C Tj = 100°C Tj = 25°C Tj = 25°C Pulse test : * tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equations : P = 0.33 x IF(AV) + 0.035 IF2(RMS ) for 1N5820 / 1N5821 P = 0.33 x IF(AV) + 0.060 IF2(RMS ) for 1N5822 IF = 3 A IF = 9.4 A VR = VRRM 1N5820 1N5821 1N5822 2 20 0.475 0.85 2 20 0.5 0.9 2 20 0.525 0.95 Unit mA mA V V VF * Fig. 1: Average forward power dissipation versus average forward current (1N5820/1N5821). 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.0 0.5 1.0 1.5 IF(av) (A) 2.0 2.5 δ=tp/T T Fig. 2: Average forward power dissipation versus average forward current (1N5822). PF(av)(W) 2.0 1.8 δ = 0.05 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.0 0.5 1.0 PF(av)(W) δ = 0.1 δ = 0.05 δ=1 δ = 0.2 δ = 0.5 δ = 0.1 δ = 0.2 δ = 0.5 δ=1 T tp IF(av) (A) δ=tp/T tp 3.0 3.5 4.0 1.5 2.0 2.5 3.0 3.5 2/5 1N582x Fig. 2-1: Average forward current versus ambient temperature (δ=0.5) (1N5820/1N5821). IF(av)(A) 3.5 Rth(j-a)=Rth(j-l)=25°C/W Fig. 2-2: Average forward current versus ambient temperature (δ=0.5) (1N5822). IF(av)(A) 3.5 Rth(j-a)=Rth(j-l)=25°C/W 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 δ=tp/T T Rth(j-a)=80°C/W 3.0 2.5 2.0 1.5 1.0 0.5 T Rth(j-a)=80°C/W tp Tamb(°C) 50 75 100 125 150 0.0 δ=tp/T tp Tamb(°C) 25 0 25 50 75 100 125 150 Fig. 3-1: Non repetitive surge peak forward current versus overload duration (maximum values) (1N5820/1N5821). IM(A) 16 14 12 10 8 6 4 IM Fig. 3-2: Non repetitive surge peak forward current versus overload duration (maximum values) (1N5822). IM(A) 12 11 10 9 8 7 6 5 4 3 IM 2 1 0 1E-3 Ta=25°C Ta=25°C Ta=75°C Ta=75°C Ta=100°C t Ta=100°C 2 0 1E-3 δ=0.5 t(s) 1E-2 1E-1 1E+0 t δ=0.5 t(s) 1E-2 1E-1 1E+0 Fig. 4: Relative variation of thermal impedance junction to ambient versus pulse duration (epoxy printed circuit board, e(Cu)=35mm, recommended pad layout). Zth(j-a)/Rth(j-a) Fig. 5: Junction capacitance versus reverse voltage applied (typical values). 1.0 0.8 0.6 0.4 600 C(pF) F=1MHz Tj=25°C 1N5820 1N5821 1N5822 δ = 0.5 100 δ = 0.2 T 0.2 δ = 0.1 Single pulse tp(s) 1E+0 1E+1 δ=tp/T tp VR(V) 10 1 2 5 10 20 40 0.0 1E-1 1E+2 1E+3 3/5 1N582x Fig. 6-1: Reverse leakage current versus reverse voltage applied (typical values) (1N5820/1N5821). IR(mA) 1N5821 1N5820 Fig. 6-2: Reverse leakage current versus reverse voltage applied (typical values) (1N5822). IR(mA) 1E+2 1E+1 1E+0 1E-1 1E-2 1E-3 5E+1 1E+1 1E+0 1E-1 Tj=25°C Tj=125°C Tj=125°C Tj=100°C Tj=100°C 1E-2 Tj=25°C VR(V) 0 5 10 15 20 25 30 1E-3 0 5 10 15 VR(V) 20 25 30 35 40 Fig. 7-1: Forward voltage drop versus forward current (typical values) (1N5820/1N5821). IFM(A) Fig. 7-2: Forward voltage drop versus forward current (typical values) (1N5822). IFM(A) 50.00 10.00 50.00 10.00 Tj=125°C Tj=100°C Tj=125°C 1.00 1.00 Tj=100°C Tj=25°C Tj=25°C 0.10 VFM(V) 0.01 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0.10 VFM(V) 0.01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Fig. 8: Non repetitive surge peak forward current versus number of cycles. IFSM(A) 100 F=50Hz Tj initial=25°C 80 60 40 20 Number of cycles 0 1 10 100 1000 4/5 1N582x PACKAGE MECHANICAL DATA DO-201AD plastic B A B ØC note 1 E E note 1 ØD ØD note 2 DIMENSIONS REF. Millimeters Min. A B ∅C ∅D E 25.40 5.30 1.30 1.25 Max. 9.50 1.000 0.209 0.051 0.049 2 - The minimum axial length within which the device may be placed with its leads bent at right angles is 0.59"(15 mm) Inches Min. Max. 0.374 1 - The lead diameter ∅ D is not controlled over zone E NOTES Ordering type 1N582x 1N582xRL Marking Part number cathode ring Part number cathode ring Package DO-201AD DO-201AD Weight 1.12g 1.12g Base qty 600 1900 Delivery mode Ammopack Tape & reel Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5