2N1613

2 N1613 2N1711 SWITCHES AND UNIVERSAL AMPLIFIERS DESCRIPTION The 2N1613 and 2N1711 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are designed for use in high-performance amplifier, oscillator and switching circuits. The 2N1711 is also used to advantage in amplifiers where low noise is an important factor. Products approved to CECC 50002-104 available on request. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CER V EBO IC Pt o t Parameter Collector-base Voltage (I E = 0) Collector-emitter Voltage (R BE ≤ 10 Ω ) Emitter-base Voltage (I C = 0) Collector Current Total Power Dissipation at T amb ≤ 25 °C at T c as e ≤ 25 °C at T c as e ≤ 100 °C Storage and Junction Temperature Value 75 50 7 500 0.8 3 1.7 – 65 to 200 Unit V V V mA W W W °C 1/5 T s t g, T j January 1989 2N1613-2N1711 THERMAL DATA R t h j- cas e R t h j-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 58 219 °C/W °C/W ELECTRICAL CHARACTERISTICS (T amb = 25 °C unless otherwise specified) Symbol I CBO I E BO V ( BR) CBO Parameter Collector Cutoff Current (I E = 0) Emitter Cutoff Current (I C = 0) Test Conditions V CB = 60 V V CB = 60 V V EB = 5 V T am b = 150 °C for 2N 16 13 for 2N 17 11 Min. Typ. Max. 10 10 10 5 Unit nA µA nA nA V Collector-base Breakdown I C = 0.1 mA Voltage Collector-emitter Breakdown Voltage (R B E ≤ 10 Ω) Emitter-base Breakdown Voltage (I C = 0) Collector-emitter Saturation Voltage Base-emitter Saturation Voltage DC Current Gain I C = 10 mA 75 V (BR)CE R * 50 V V ( BR) V CE V BE EBO I E = 0.1 mA I C = 150 mA I C = 150 mA for 2 N16 13 I C = 0.01 mA I C = 0.1 mA I C = 10 mA I C = 150 mA I C = 500 mA I C = 10 mA T amb = –55 °C for 2 N17 11 I C = 0.01 mA I C = 0.1 mA I C = 10 mA I C = 150 mA I C = 500 mA I C = 10 mA T amb = 55 °C I B = 15 mA I B = 15 mA 7 0.5 0.95 1.5 1.3 V V V (s at )* (s at ) * h F E* V CE V CE V CE V CE V CE V CE = = = = = = 10 10 10 10 10 10 V V V V V V 20 35 40 20 20 35 50 80 80 55 35 60 80 130 130 75 65 120 h F E* DC Current Gain V CE V CE V CE V CE V CE V CE = = = = = = 10 10 10 10 10 10 V V V V V V 20 35 300 hfe Small Signal Current Gain for 2 N16 13 I C = 1 mA f = 1 kHz for 2 N17 11 I C = 1 mA f = 1 kHz Transition Frequency I C = 50 mA f = 20 MHz IC = 0 f = 1 MHz IE = 0 f = 1 MHz V CE = 10 V 30 V CE = 10 V 70 V CE = 10 V for 2N 16 13 for 2N 17 11 V EB = 0.5 V V CB = 10 V 60 70 135 80 100 50 18 80 25 300 MHz MHz pF pF 70 150 ft C EBO C CBO Emitter-base Capacitance Collector-base Capacitance * Pulsed : pulse duration = 300 µs, duty cycle = 1 %. 2/5 2N1613-2N1711 ELECTRICAL CHARACTERISTICS (continued) Symbol NF Parameter Noise Figure Test Conditions I C = 0.3 mA R 9 = 510 Ω V CE = 10 V f = 1 kHz for 2N 16 13 for 2N 17 11 V CE = 5 V for 2N 16 13 for 2N 17 11 V CE = 5 V for 2N 16 13 for 2N 17 11 V CE = 5 V for 2N 16 13 for 2N 17 11 Min. Typ. Max. Unit 6 3.5 2.2 4.4 3.6x10– 4 7.3x10– 4 12.5 23.8 12 8 dB dB kΩ kΩ h ie Input Impedance I C = 1 mA f = 1 KHz I C = 1 mA f = 1 kHz I C = 1 mA f = 1 kHz hre Reverse Voltage Ratio hoe Output Admittance µS µS * Pulsed : pulse duration = 300 µs, duty cycle = 1 %. 3/5 2N1613-2N1711 TO39 MECHANICAL DATA mm DIM. MIN. A B D E F G H I L 5.08 1.2 0.9 45o (typ.) 12.7 0.49 6.6 8.5 9.4 0.200 0.047 0.035 TYP. MAX. MIN. 0.500 0.019 0.260 0.334 0.370 TYP. MAX. inch D G I H E F A L B P008B 4/5 2N1613-2N1711 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 5/5