2N2905

2N2905 2N2907 GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N2905 and 2N2907 are silicon planar epitaxial PNP transistors in Jedec TO-39 (for 2N2905) and in Jedec TO-18 (for 2N2907) metal case. They are designed for high speed saturated switching and general purpose application. 2N2905 approved to CECC 50002-102, 2N2907 approved to CECC 50002-103 available on request. TO-18 TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC P t ot Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Total Dissipation at T amb ≤ 25 C for 2N2905 for 2N2907 at T case ≤ 25 o C for 2N2905 for 2N2907 St orage Temperature Max. Operating Junction Temperature o Value -60 -40 -5 -0.6 0.6 0.4 3 1.8 -65 to 200 200 Unit V V V A W W W W o o T stg Tj C C 1/5 November 1997 2N2905/2N2907 THERMAL DATA T O-39 R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 58.3 292 TO -18 97.3 437.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CBO I CEX I BEX Parameter Collector Cut-off Current (IE = 0) Collector Cut-off Current (V BE = -0.5V) Base Cut-off Current (V BE = -0.5V) Test Cond ition s V CB = -50 V V CB = -50 V V CE = -30 V V CE = -30 V I C = -10 µ A -60 Tc ase = 150 C o Min. Typ . Max. -20 -20 -50 -50 Un it nA µA nA nA V V ( BR)CBO ∗ Collector-Base Breakdown Voltage (I E = 0) V ( BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V (BR)EBO ∗ Emitter-Base Breakdown Voltage (I C = 0) V CE(sat )∗ V BE(s at)∗ hFE∗ Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current G ain I C = -10 mA -40 V I E = -10 µ A -5 V I C = -150 mA I C = -500 mA I C = -150 mA I C = -500 mA IC IC IC IC IC = = = = = -0.1 mA -1 mA -10 mA -150 mA -500 mA IB = -15 mA IB = -50 mA IB = -15 mA IB = -50 mA V CE = -10 V V CE = -10 V V CE = -10 V V CE = -10 V V CE = -10 V f = 100 MHz f = 1MHz f = 1MHz 35 50 75 100 30 200 -0.4 -1.6 -1.3 -2.6 V V V V 300 MHz 30 8 10 40 80 30 pF pF ns ns ns ns fT C EBO C CBO td tr ts tf Transition F requency Emitter Base Capacitance Collector Base Capacitance Delay Time Rise Time Storage Time Fall T ime V CE = -20 V I C = -50 mA IC = 0 IE = 0 V EB = -2 V V CB = -10 V V CC = -30 V I B1 = -15 mA V CC = -30 V I B1 = -15 mA I C = -150 mA I C = -150 mA V CC = -6 V I C = -150 mA I B1 = -IB2 = -15 mA V CC = -6 V I C = -150 mA I B1 = -IB2 = -15 mA ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 % 2/5 2N2905/2N2907 TO-18 MECHANICAL DATA mm DIM. MIN. A B D E F G H I L 45o 2.54 1.2 1.16 45o TYP. 12.7 0.49 5.3 4.9 5.8 0.100 0.047 0.045 MAX. MIN. TYP. 0.500 0.019 0.208 0.193 0.228 MAX. inch D G I H E F A L C B 0016043 3/5 2N2905/2N2907 TO-39 MECHANICAL DATA mm DIM. MIN. A B D E F G H I L 5.08 1.2 0.9 45o (typ.) 12.7 0.49 6.6 8.5 9.4 0.200 0.047 0.035 TYP. MAX. MIN. 0.500 0.019 0.260 0.334 0.370 TYP. MAX. inch D G I H E F A L B P008B 4/5 2N2905/2N2907 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersede and replaces all information previously supplied. s SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 5/5