2N5038

2N5038 HIGH CURRENT NPN SILICON TRANSISTOR s s SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The 2N5038 is a silicon planar multiepitaxial NPN transistors in Jedec TO-3 metal case. They are especially intended for high current and switching applications. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEX V CER V CEO V EBO IC I CM IB P tot T stg Tj Parameter Collector-Base Voltage (I E = 0 ) Collector-Emitter Voltage (V BE =-1.5V R BE =100 Ω ) Collector-Emitter Voltage (R BE < 50 Ω ) Collector-Emitter Voltage (I B = 0 ) Emitter-Base Voltage (I C = 0 ) Collector Current Collector Peak Current Base Current Total Dissipation at T c ≤ 2 5 C o Value 150 150 110 90 7 20 30 5 140 -65 to 200 200 Unit V V V V V A A A W o o Storage Temperature Max. Operating Junction Temperature C C June 1997 1/4 2N5038 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 1.25 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEV Parameter Collector Cut-off Current (V BE = - 1.5V) Collector Cut-off Current (I B = 0 ) Emitter Cut-off Current (I C = 0 ) Test Conditions V CE = 1 40 V V CE = 1 00 V V CE = 7 0 V V EB = 7 V V EB = 5 V I C = 0 .2 A I C = 0 .2 A I C = 0 .2 A IC = 12 A IC = 20 A IC = 20 A IC = 12 A IC = 2 A IC = 12 A IC = 2 A IE = 0 R BE = 50 Ω R BE = 100 Ω V BE = -1.5V I B = 1 .2 A IB = 5 A IB = 5 A V CE = 5 V V CE = 5 V V CE = 5 V V CE = 1 0 V V CB = 1 0 V f = 5 MHz f = 1 MHz 50 20 12 300 0.5 1.5 0.5 V CE = 2 8 V V CE = 4 5 V V BE = -4 V R BE = 2 0 Ω L = 180 µ H 5 0.9 13 pF µs µs µs A A mJ 90 110 150 1 2.5 3.3 1.8 250 100 T c = 1 50 C o Min. Typ. Max. 50 10 20 50 5 Unit mA mA mA mA mA V V V V V V V I CEO I EBO V CEO(sus) ∗ Collector-Emitter Sustaining Voltage V CER(sus) ∗ Collector-Emitter Sustaining Voltage V CEX(sus) ∗ Collector-Emitter Sustaining Voltage V CE(sat) ∗ V BE(sat) ∗ V BE ∗ h FE ∗ hfe C CBO tr ts tf I s/b ∗∗ E s/b Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain Small Signal Current Gain Collector-Base Capacitance Rise Time Storage Time Fall Time Second Breakdown Collector Current Second Breakdown Energy IC = 12 A VCC = 3 0 V I B1 = - IB2 = 1 .2A ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/4 2N5038 TO-3 MECHANICAL DATA mm MIN. A B C D E G N P R U V 11.00 0.97 1.50 8.32 19.00 10.70 16.50 25.00 4.00 38.50 30.00 TYP. MAX. 13.10 1.15 1.65 8.92 20.00 11.10 17.20 26.00 4.09 39.30 30.30 MIN. 0.433 0.038 0.059 0.327 0.748 0.421 0.649 0.984 0.157 1.515 1.187 inch TYP. MAX. 0.516 0.045 0.065 0.351 0.787 0.437 0.677 1.023 0.161 1.547 1.193 DIM. P G A D C U V O N R B P003F 3/4 E 2N5038 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4