2N6547

® 2N6547 HIGH POWER NPN SILICON TRANSISTOR s s s s s STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY HIGH CURRENT CAPABILITY FAST SWITCHING SPEED APPLICATIONS SWITCH MODE POWER SUPPLIES s FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS s 1 2 TO-3 DESCRIPTION The 2N6547 is a silicon Multiepitaxial Mesa NPN transistor mounted in TO-3 metal case. It is particulary intended for switching and industrial applications from single and tree-phase mains. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CER V CES V CEO VEBO IC ICM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (R BE = 5 0 Ω ) Collector-Emitter Voltage (V BE = 0 ) Collector-Emitter Voltage (I B = 0 ) Emitter-Base Voltage (I C = 0 ) Collector Current Collector Peak Current Base Current Base Peak Current Total Dissipation at T c = 2 5 o C Storage Temperature Max. Operating Junction Temperature Value 850 850 400 9 15 30 4 20 175 -65 to200 200 Unit V V V V A A A A W o C o C October 2001 1/4 2N6547 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 1 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES I CER I EBO Parameter Collector Cut-off Current (V BE = 0 ) Collector Cut-off Current (R BE = 1 0 Ω ) Emitter Cut-off Current (I C = 0 ) Test Conditions VCE = 8 50 V VCE = 8 50 V VCE = 8 50 V VEB = 9 V IC = 1 00 mA L = 25 mH 400 T c = 1 00 o C T c = 1 00 o C Min. Typ. Max. 1 4 5 1 Unit mA mA mA mA V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0 ) V CE(sat) ∗ Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Transition Frequency Collector-Base Capacitance IC = 1 0 A IC = 1 5 A IC = 1 0A IC = 1 0 A IC = 1 0A IC = 5 A IC = 1 0 A I C = 0 .5 A f = 1 MHz VCB = 1 0 V IB = 2 A IB = 3 A I B = 2 A T c = 100 o C IB = 2 A I B = 2 A T c = 100 o C V CE = 2 V V CE = 2 V V CE = 1 0 V f = 1 MHz 12 6 6 1.5 5 2.5 1.6 1.6 30 24 360 V V V V V V BE(sat) ∗ h FE ∗ fT ∗ C CBO MHz pF (I E = 0 ) ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 % RESISTIVE LOAD SWITCHING TIMES Symbol t on ts tf Parameter Turn-on Time Storage Time Fall Time Test Conditions V CC = 2 50 V I B1 = - I B2 = 2 A IC = 1 0 A Tp ≥ 2 5 µs Min. Typ. Max. 1 4 0.7 Unit µs µs µs INDUCTIVE LOAD SWITCHING TIMES Symbol ts tf Parameter Storage Time Fall Time Test Conditions V CL = 4 50 V L C = 1 80 µ H V BE = - 5 V IC = 10 A I B1 = 2 A T c = 1 00 o C Min. Typ. Max. 5 1.5 Unit µs µs 2/4 2N6547 TO-3 MECHANICAL DATA mm MIN. A B C D E G N P R U V 11.00 0.97 1.50 8.32 19.00 10.70 16.50 25.00 4.00 38.50 30.00 TYP. MAX. 13.10 1.15 1.65 8.92 20.00 11.10 17.20 26.00 4.09 39.30 30.30 MIN. 0.433 0.038 0.059 0.327 0.748 0.421 0.649 0.984 0.157 1.515 1.187 inch TYP. MAX. 0.516 0.045 0.065 0.351 0.787 0.437 0.677 1.023 0.161 1.547 1.193 DIM. P G A D C U V O N R B P003F E 3/4 2N6547 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2001 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4