74VHC03M

® 74VHC03 QUAD 2-INPUT OPEN DRAIN NAND GATE PRELIMINARY DATA s s s s s s s s HIGH SPEED: tPD = 3.7 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 2 µA (MAX.) at TA = 25 oC HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) POWER DOWN PROTECTION ON INPUTS OPERATING VOLTAGE RANGE: VCC (OPR) = 2V to 5.5V PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 03 IMPROVED LATCH-UP IMMUNITY LOW NOISE: VOLP = 0.8V (Max.) M (Micro Package) T (TSSOP Package) ORDER CODES : 74VHC03M 74VHC03T be used in wired AND configuration. This device can also be used as a led driver and in any other application requiring a current sink. Power down protection is provided on all inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V. All inputs and outputs are equipped with protection circuits against static discharge, giving them 2kV ESD immunity and transient excess voltage. DESCRIPTION The 74VHC03 is an advanced high-speed CMOS QUAD 2-INPUT OPEN DRAIN NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. The internal circuit is composed of 3 stages including buffer output, which provides high noise immunity and stable output. This device can, with an external pull-up resistor, PIN CONNECTION AND IEC LOGIC SYMBOLS June 1999 1/7 74VHC03 INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN No 1, 4, 9, 12 2, 5, 10, 13 3, 6, 8, 11 7 14 SYMBOL 1A to 4A 1B to 4B 1Y to 4Y GND VCC NAME AND FUNCT ION Data Inputs Data Inputs Data Outputs Ground (0V) Positive Supply Voltage TRUTH TABLE A L L H H Z: High Impedance B L H L H Y Z Z Z L ABSOLUTE MAXIMUM RATINGS Symbol VCC VI VO IIK IOK IO Tstg TL Supply Voltage DC Input Voltage DC Output Voltage DC Input Diode Current DC Output Diode Current DC Output Current Storage Temperature Lead Temperature (10 sec) Parameter Value -0.5 to +7.0 -0.5 to +7.0 -0.5 to VCC + 0.5 - 20 ± 20 25 ± 50 -65 to +150 300 Unit V V V mA mA mA mA o o ICC or IGND DC VCC or Ground Current C C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied. RECOMMENDED OPERATING CONDITIONS Symbol VCC VI VO Top dt/dv Supply Voltage Input Voltage Output Voltage Operating Temperature Input Rise and Fall Time (see note 1) (VCC = 3.3 ± 0.3V) (V CC = 5.0 ± 0.5V) Parameter Valu e 2.0 to 5.5 0 to 5.5 0 to VCC -40 to +85 0 to 100 0 to 20 Unit V V V o C ns/V ns/V 1) VIN from 30% to70%of VCC 2/7 74VHC03 DC SPECIFICATIONS Symb ol Parameter T est Cond ition s V CC (V) VIH VIL VOL High Level Input Voltage Low Level Input Voltage Low Level Output Voltage 2.0 3.0 to 5.5 2.0 3.0 to 5.5 2.0 3.0 4.5 3.0 4.5 IOZ High Impedance Output Leakage Current Input Leakage Current Quiescent Supply Current 5.5 0 to 5.5 5.5 I O=50 µ A IO=50 µA IO=50 µA IO=4 mA IO=8 mA VI = VIH or VIL VO = VCC or GND VI = 5.5V or GND VI = VCC or GND 0.0 0.0 0.0 Min. 1.5 0.7VCC 0.5 0.3VCC 0.1 0.1 0.1 0.36 0.36 ±0.25 Typ . Value T A = 25 o C Max. -40 to 85 o C Min . 1.5 0.7VCC 0.5 0.3VCC 0.1 0.1 0.1 0.44 0.44 ±2.5 µA V Max. V V Un it II ICC ±0.1 2 ±1.0 20 µA µA AC ELECTRICAL CHARACTERISTICS (Input tr = tf =3 ns) Symbol Parameter V CC (V) tPZL Propagation Delay Time T est Conditio n CL (p F) 15 50 15 50 50 50 RL RL RL RL RL = 1 KΩ = 1 KΩ = 1 KΩ = 1 KΩ = 1 KΩ Valu e T A = 25 o C Min. T yp. 5.5 8.0 3.7 5.2 8.0 5.2 Max. 7.9 11.4 5.5 7.5 11.4 7.5 Unit -40 to 85 o C Min. 1.0 1.0 1.0 1.0 1.0 1.0 Max. 9.5 13.0 6.5 8.5 13.0 8.5 tPLZ Propagation Delay Time 3.3 (*) 3.3 (*) 5.0(**) 5.0(**) 3.3 (*) 5.0 (**) ns R L = 1 KΩ ns (*) Voltage range is 3.3V ± 0.3V (**) Voltage range is 5V ± 0.5V CAPACITIVE CHARACTERISTICS Symb ol Parameter T est Cond ition s Min. C IN COUT CPD Input Capacitance Output Capacitance Power Dissipation Capacitance (note 1) Typ . 4 5 6 Value T A = 25 o C Max. 10 -40 to 85 o C Min . Max. 10 pF pF pF Un it 1) CPD isdefined as the value of the IC’sinternal equivalent capacitance which is calculated fromthe operating current consumption without load. (Referto Test Circuit).Average operating current can be obtained by the following equation. ICC(opr) = CPD • VCC • fIN + ICC/4 (per Gate) 3/7 74VHC03 DYNAMIC SWITCHING CHARACTERISTICS Symb ol Parameter T est Cond ition s V CC (V) VOLP VOLV VIHD VILD Dynamic Low Voltage Quiet Output (note 1, 2) Dynamic High Voltage Input (note 1, 3) Dynamic Low Voltage Input (note 1, 3) 5.0 -0.8 5.0 5.0 C L = 50 pF 3.5 1.5 Min. Typ . 0.3 -0.3 V Value T A = 25 o C Max. 0.8 -40 to 85 o C Min . Max. Un it 1) Worst case package. 2) Max number of outputs defined as (n). Data inputs are driven 0V to 5.0V, (n -1) outputs switching and one output at GND. 3) Max number of data inputs (n) switching. (n-1) switching 0V to5.0V. Inputs under test switching: 5.0V to threshold (VILD), 0V to threshold (VIHD), f=1MHz. TEST CIRCUIT CL = 15/50 pF or equivalent (includes jig and probe capacitance) RL = R1 = 1KΩ or equivalent RT = ZOUT of pulse generator (typically 50Ω) WAVEFORM: PROPAGATION DELAYS (f=1MHz; 50% duty cycle) 4/7 74VHC03 SO-14 MECHANICAL DATA DIM. MIN. A a1 a2 b b1 C c1 D E e e3 F G L M S 3.8 4.6 0.5 8.55 5.8 1.27 7.62 4.0 5.3 1.27 0.68 8 (max.) 0.149 0.181 0.019 8.75 6.2 0.35 0.19 0.5 45 (typ.) 0.336 0.228 0.050 0.300 0.157 0.208 0.050 0.026 0.344 0.244 0.1 mm TYP. MAX. 1.75 0.2 1.65 0.46 0.25 0.013 0.007 0.019 0.003 MIN. inch TYP. MAX. 0.068 0.007 0.064 0.018 0.010 P013G 5/7 74VHC03 TSSOP14 MECHANICAL DATA mm MIN. A A1 A2 b c D E E1 e K L 0o 0.50 0.05 0.85 0.19 0.09 4.9 6.25 4.3 5 6.4 4.4 0.65 BSC 4o 0.60 8o 0.70 0o 0.020 0.10 0.9 TYP. MAX. 1.1 0.15 0.95 0.30 0.20 5.1 6.5 4.48 0.002 0.335 0.0075 0.0035 0.193 0.246 0.169 0.197 0.252 0.173 0.0256 BSC 4o 0.024 8o 0.028 0.004 0.354 MIN. inch TYP. MAX. 0.433 0.006 0.374 0.0118 0.0079 0.201 0.256 0.176 DIM. A A2 A1 b e K c L E D E1 PIN 1 IDENTIFICATION 1 6/7 74VHC03 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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