ACS102-6T
AC switch family Transient protected AC switch (ACS™)
Main product characteristics
IT(RMS) VDRM/VRRM IGT
■ ■
0.2 A 600 V 5 mA
COM COM NC
G NC NC OUT NC
COM OUT G
Overvoltage protection by crowbar technology High noise immunity - static dV/dt > 300 V/µs
SO-8 ACS102-6T1
TO-92 ACS102-6TA
Applications
■ ■
AC ON/OFF static switching in appliances and industrial control systems Drive of low power high inductive or resistive loads like: – relay, valve, solenoid, – dispenser, door lock – micro-motor
Description
The ACS102-6T belongs to the AC line switch family. This high performance switch can control a load of up to 0.2A. The ACS102-6T switch includes an overvoltage crowbar structure to absorb the overvoltage energy, and a gate level shifter driver to separate the digital controller from the main switch. It is triggered with a negative gate current flowing out of the gate pin.
Benefits
■ ■ ■ ■ ■
Needs no external protection snubber or varistor. Enables equipment to meet IEC 61000-4-5. Reduces component count by up to 80%. Interfaces directly with the micro-controller. Common package tab connection supports connection of several alternating current switches (ACS) on the same cooling pad. Integrated structure based on ASD(a) technology
Functional diagram
OUT
■
G
Order code
Part number ACS102-6TA ACS102-6TA-TR ACS102-6T1 ACS102-6T1-TR Marking ACS1026T ACS1026T ACS1026T ACS1026T COM OUT G
COM
Common drive reference to connect to the mains Output to connect to the load. Gate input to connect to the controller through gate resistor
a. ASD: Application Specific Devices
TM: ACS is a trademark of STMicroelectronics
June 2006
Rev 2
www.st.com
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Characteristics
ACS102-6T
1
Table 1.
Symbol IT(RMS)
Characteristics
Absolute maximum ratings (Tamb = 25° C, unless otherwise specified)
Parameter TO-92 RMS on-state current (full sine wave) SO-08 Non repetitive surge peak on-state current (full cycle sine wave, Tj initial = 25° C) I²t Value for fusing Critical rate of rise of on-state current IG = 2xIGT, tr ≤ 100 ns Non repetitive line peak mains voltage(1) Peak gate current Peak positive gate voltage Average gate power dissipation Storage junction temperature range Operating junction temperature range tp = 20 µs f = 120 Hz f = 60 Hz f = 50 Hz Tamb = 100° C Tamb = 100° C t = 16.7 ms t = 20 ms tp = 10 ms Tj = 125° C Tj = 25° C Tj = 125° C Tj = 125° C Tj = 125° C 7.6 A 7.3 0.38 50 2 1 10 0.1 -40 to +150 -30 to +125 A²s A/µs kV A V W °C Value 0.2 Unit A
ITSM I²t dI/dt VPP IGM VGM PG(AV) Tstg Tj
1. according to test described by IEC 61000-4-5 standard and Figure 16
Table 2.
Symbol IGT (1) VGT VGD IH (2) IL(2) dV/dt (2) (dI/dt)c VCL
(2)
Electrical characteristics (Tj = 25° C, unless otherwise specified)
Test conditions VOUT = 12 V, RL = 33 Ω VOUT = VDRM, RL =3.3 kΩ, Tj = 125° C IOUT = 100 mA IG = 1.2 x IGT VOUT = 67% VDRM, gate open, Tj = 125° C Without snubber (15 V/µs), turn-off time ≤ 20 ms, Tj = 125° C ICL = 0.1 mA, tp = 1 ms, Tj = 125° C Quadrant II - III II - III II - III MAX MAX MIN MAX MAX MIN MIN MIN Value 5 0.9 0.15 20 25 300 0.15 650 Unit
mA V V mA mA V/µs A/ms V
1. minimum IGT is guaranteed at 10% of IGT max 2. for both polarities of OUT referenced to COM
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ACS102-6T Table 3.
Symbol VTM (1) VTO RD
(1) (1)
Characteristics Static electrical characteristics
Test conditions ITM= 0.3 A, tp = 380 µs Tj = 25° C Tj = 125° C Tj = 125° C Tj = 25° C VOUT = 600 V MAX Tj = 125° C 0.2 mA MAX MAX MAX Value 1.2 0.80 500 2 Unit V V mΩ µA
IDRM IRRM
1. for both polarities of OUT referenced to COM
Table 4.
Symbol Rth (j-l) Rth (j-a)
Thermal resistance
Parameter Junction to lead (AC) Junction to ambient S = 40 mm² SO-8 150 TO-92 TO-92 Value 60 150 °C/W Unit
Figure 1.
P (W)
0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0.00 0.00
α=180°
Maximum power dissipation Figure 2. vs RMS on-state current (full cycle)
0.22 0.20 0.18 0.16 0.14 0.12 0.10 0.08 0.06
180°
RMS on-state current vs ambient temperature (full cycle)
IT(RMS) (A)
0.04 0.02 0.00 0
IT(RMS) (A)
0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20
a=180° Printed circuit board FR4 Natural convection
Tamb °C
50 75 100 125
25
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Characteristics
ACS102-6T
Figure 3.
Relative variation of junction to ambient thermal impedance vs pulse duration and package
Figure 4.
Relative variation of gate trigger current, holding current and latching current vs junction temperature
K=[Zth(j-a) /Rth(j-a) ]
1.E+00
IGT, IH, IL [T j] / IGT, IH, IL [T j=25°C]
2.5
2.0
IGT
1.5
1.E-01
TO-92
SO-8
IL & IH
1.0
0.5
tP (S)
1.E-02 1.E-03
Tj(°C) 0.0
1.E+01 1.E+02 1.E+03
1.E-02
1.E-01
1.E+00
-40 -30 -20 -10
0
10 20 30 40 50 60 70 80 90 100 110 120 130
Figure 5.
Non repetitive surge peak on-state Figure 6. current vs number of cycles
Non repetitive surge peak on-state current for a sinusoidal pulse with width tp
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