AM83135-050

AM83135-050 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . . . . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED RUGGEDIZED VSWR 3:1 @ 1dB OVERDRIVE LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 50 W MIN. WITH 5.2 dB GAIN .310 x .310 2LF L (S064) hermetically sealed O RDER CODE AM83135-050 BRANDING 83135-50 DESCRIPTION The AM83135-050 device is a high power silicon bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications. This device is characterized at 10 µsec pulsewidth and 10% duty cycle, but is capable of operation over a range of pulse widths, duty cycles and temperatures and can withstand a 3:1 output VSWR with a +1 dB input overdrive. Low RF thermal resistance, refractory/gold metallization, and computerized automatic wire bonding techniques ensure high reliability and product consistency (including phase characteristics). The AM83135-050 is supplied in the IMPAC™ Hermetic Metal/Ceramic package with internal Input/Output impedance matching circuitry, and is intended for military and other high reliability applications. ABSOLUTE MAXIMUM RATINGS (T case = 25° C) Symbol Parameter PIN CONNECTION 1. Collector 2. Base 3. Emitter 4. Base Value Un it PDISS IC VCC TJ TSTG Power Dissipation* Device Current* (TC ≤ 125 °C) 312 8.0 48 250 − 65 to +200 W A V °C °C Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 0.40 °C/W *Applies only to rated RF amplifier operation November 27, 1996 1/6 AM83135-050 E LECTRICAL SPECIFICATIONS (T case = 25° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVEBO BVCER ICES hFE IC = 25mA IE = 5mA IC = 25mA VBE = 0V VCE = 5V I E = 0mA I C = 0mA RBE = 10W V CE = 42V I C = 3A 55 3.5 55 — 30 — — — — — — — — 20 300 V V V mA — DYNAMIC Symbol Test Conditions Min. Value Typ. Max. Unit POUT ηc GP Note: f = 3.1 — 3.5GHz f = 3.1 — 3.5GHz f = 3.1 — 3.5GHz = = 10 µ Sec 10% P IN = 15W P IN = 15W P IN = 15W VCC = 42V VCC = 42V VCC = 42V 50 30 5.2 — — — — — W % dB P uls e Wi dth D uty Cycl e 2/6 AM83135-050 TYPICAL PERFORMANCE OUTPUT POWER vs FREQUENCY COLLECTOR EFFICIENCY vs COLLECTOR SUPPLY VOLTAGE OUTPUT POWER vs COLLECTOR SUPPLY VOLTAGE COLLECTOR EFFICIENCY vs FREQUENCY 3/6 AM83135-050 IMPEDANCE DATA TYPICAL INPUT IMPEDANCE ZIN PIN = 15 W VCC = 42 V ZO* = 50 ohms FREQ. L = 3.1 GHz M = 3.3 GHz H = 3.5 GHz Z IN (Ω) 16.5 + j 13.5 10.8 + j 5.5 6.7 + j 5.2 ZCL (Ω) 7.7 − j 11.8 6.5 − j 7.2 3.8 − j 6.7 TYPICAL COLLECTOR LOAD IMPEDANCE ZCL PIN = 15 W VCC = 42 V Z O* = 50 ohms *Normalized 4/6 AM83135-050 TEST CIRCUIT All dimensions are in mils. Substrate material: 25 mil thick Al2O3 (Er = 9.6) C - 0.3 to 1.2 pF Johanson Gigatrim L - 1 Turn #26 wire .80 I.D. 5/6 AM83135-050 PACKAGE MECHANICAL DATA R ef.: Dwg. No. 12-0221 UDCS No. 1011424 rev A Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. ©1996 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland Taiwan - Thailand - United Kingdom - U.S.A. 6/6