B13007D

STB13007DT4 High voltage fast-switching NPN power transistor General features ■ Improved specification: Lower leakage current, Tighter gain range, DC current gain preselection, Tighter storage time range High voltage capability Integrated free-wheeling diode Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Fully characterized at 125 °C Large RBSOA In compliance with the 2002/93/EC European Directive 1 D2PAK (T0-263) ■ ■ ■ ■ ■ ■ ■ ■ 3 Internal schematic diagram Description The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure to enhance switching speeds. Applications ■ ■ Electronic transformers for halogen lamps Switch mode power supplies Order codes Part Number STB13007DT4 Marking B13007D Package D 2PAK Packing Tape & Reel June 2006 Rev 1 1/10 www.st.com 10 STB13007DT4 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 2.2 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2/10 STB13007DT4 Electrical ratings 1 Electrical ratings Table 1. Symbol VCEV VCEO VEBO IC ICM IB IBM Ptot Tstg TJ Absolute maximum rating Parameter Collector-emitter voltage (V BE = -1.5V) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5ms) Base current Base peak current (tP < 5ms) Total dissipation at T c = 25°C Storage temperature Max. operating junction temperature Value 700 400 9 8 16 4 8 80 -65 to 150 150 Unit V V V A A A A W °C °C Table 2. Symbol Rthj-case Rthj-amb Thermal data Parameter Thermal resistance junction-case Thermal resistance junction-amb __max __max Value 1.56 62.5 Unit °C/W °C/W 3/10 Electrical characteristics STB13007DT4 2 Electrical characteristics (Tcase = 25°C unless otherwise specified) Table 3. Symbol ICES ICEO IEBO Electrical characteristics Parameter Collector cut-off current (VBE =0V) Collector cut-off current (IB =0) Emitter cut-off current (IC =0) Test Conditions VCE =700V VCE =700V VCE =400V VEB =9V Min. Typ. Max. 10 0.5 100 100 Unit µA mA µA µA Tc =100°C Collector-emitter VCEO(sus) (1) sustaining voltage (IB = 0) IC =10mA _ _ _ IB = 0.4A IC = 5 A __ _ IB = 1A IC = 8 A IC = 5 A __ _ IB = 2A __ _ IB = 1A IC = 2A 400 0.8 1.5 2 3 V V V V V VCE(sat) (1) Collector-emitter saturation voltage Tc =100°C IC = 2A VBE(sat) (1) Base-emitter saturation voltage IC = 5A IC = 5A _ _ _ IB = 0.4A __ _ IB = 1A __ _ IB = 1A 1.2 1.6 1.5 V V V Tc =100°C hFE Vf DC current gain Diode forward voltage Inductive load Storage time Fall time IC = 2A IC = 5A IC = 3A IC = 5A ___ VClamp = 250V IB1 = 1A RBB = 0Ω (see fig. 11) IC = 5A ___ VClamp = 250V IB1 = 1A RBB = 0Ω VBE(off) = -5V L = 200µH (see fig. 11) 2.2 150 µs ns VBE(off) = -5V L = 200µH 1.7 90 2.3 150 µs ns _ _VCE = 5V _VCE = 5V 18 8 40 25 2.5 V ts tf ts tf Inductive load Storage time Fall time Tc =125°C Note (1) Pulsed duration = 300 µs, duty cycle ≤1.5% 4/10 STB13007DT4 Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Derating curve Figure 3. DC current gain Figure 4. DC current gain Figure 5. Collector-emitter saturation voltage Figure 6. Base-emitter saturation voltage 5/10 Electrical characteristics Figure 7. Diode forward voltage Figure 8. STB13007DT4 Switching times inductive load Figure 9. Switching times inductive load Figure 10. Reverse biased safe operating area 2.2 Test circuits Figure 11. Inductive load switching test circuit 1) Fast electronic switch 2) Non-inductive resistor 3) Fast recovery rectifier 6/10 STB13007DT4 Package mechanical data 3 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 7/10 Package mechanical data STB13007DT4 TO-252 (DPAK) MECHANICAL DATA DIM. MIN. A A1 A2 B B2 C C2 D E G H L2 L4 V2 0.60 0o 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 0.8 1.00 8o 0.024 0o mm TYP. MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 MIN. 0.087 0.035 0.001 0.025 0.204 0.018 0.019 0.236 0.252 0.173 0.368 0.031 0.039 0o inch TYP. MAX. 0.094 0.043 0.009 0.035 0.213 0.024 0.024 0.244 0.260 0.181 0.398 P032P_B 8/10 STB13007DT4 Revision history 4 Revision history Table 4. Date 19-Jun-2006 Revision history Revision 1 Initial release. Changes 9/10 STB13007DT4 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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