0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
BAS70-07S

BAS70-07S

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

  • 描述:

    BAS70-07S - RF DETECTION DIODE - STMicroelectronics

  • 数据手册
  • 价格&库存
BAS70-07S 数据手册
® BAS70-07S / BAS70-08S RF DETECTION DIODE FEATURES AND BENEFITS s s s LOW DIODE CAPACITANCE LOW SERIES INDUCTANCE AND RESISTANCE SURFACE MOUNT PACKAGE DESCRIPTION Dual and Triple Schottky diode in SOT323-6L package. This diode is intented to be used in RF application for signal detection and temperature compensation. BAS70-07S SCHEMATIC DIAGRAM SOT323-6L BAS70-08S SCHEMATIC DIAGRAM 1 2 3 6 5 4 1 2 3 6 5 4 ABSOLUTE RATINGS (limiting values) Symbol VR IF IFRM IFSM P Tstg Tj TL Parameter Continuous reverse voltage Continuous forward current Repetitive peak forward current Surge non repetitive forward current Power Dissipation Storage temperature range Maximum junction temperature Maximum temperature for soldering tp = 10 ms sinusoidal Ta = 55°C Value 70 70 70 1 250 - 65 to +150 150 260 Unit V mA mA A mW °C °C °C December 2001 - Ed: 2A 1/4 BAS70-07S / BAS70-08S THERMAL RESISTANCE Symbol Rth (j-a) Parameter Junction to ambient on printed circuit board FR4 with recommended pad layout Value 500 Unit °C/W STATIC ELECTRICAL CHARACTERISTICS (Tj = 25°C otherwise specified) Symbol VF Parameter Forward voltage drop Tests Conditions IF = 1 mA IF = 10 mA IF = 15 mA IR VBR Reverse leakage current Breakdown voltage VR = 70 V IR = 10 µA 70 Min. Typ. Max. 0.41 0.75 1 10 Unit V V V µA V ELECTRICAL CHARACTERISTICS Symbol C RF Ls Parameter Junction capacitance Differential forward resistance Series inductance Tests Conditions VR = 0 V IF = 10 mA F = 1 MHz F = 100 MHz 30 1.5 Min. Typ. Max. 2 Unit pF Ohm nH 2/4 BAS70-07S / BAS70-08S Fig. 1: Forward voltage drop versus forward current (typical values). IFM(mA) 1.E+02 Fig. 2: Reverse leakage current versus reverse voltage applied (typical values). IR(µA) 1.E+02 Tj = 150°C 1.E+01 1.E+01 Tj = 85°C 1.E+00 Tj=150°C Tj=125°C 1.E-01 Tj = 25°C 1.E+00 Tj=85°C Tj=25°C Tj=-40°C 1.E-02 VFM(V) VR(V) 1.E-03 1.2 1.E-01 0.0 0.2 0.4 0.6 0.8 1.0 0 10 20 30 40 50 60 70 Fig. 3: Differential forward resistance versus forward current (typical values). Rf(Ω) 1000 F = 10kHz Tj = 25°C Fig. 4: Junction capacitance versus reverse voltage applied (typical values). C(pF) 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 F = 1MHz Vosc = 30mVRMS Tj = 25°C 100 IF(mA) 10 0.1 1.0 10.0 VR(V) 0 10 20 30 40 50 60 70 Fig. 5: Variation of thermal impedance junction to ambient versus pulse duration (printed circuit board, epoxy FR4). Zth(j-a)(°C/W) 1000.0 Fig. 6: Thermal resistance junction to ambient versus copper surface under each lead (printed circuit board, epoxy FR4). Rth(j-a) 600 550 500 100.0 450 400 350 tp(s) 10.0 1.E-02 300 S(mm²) 1.E+01 1.E+02 0 5 10 15 20 25 30 35 40 45 50 1.E-01 1.E+00 3/4 BAS70-07S / BAS70-08S PACKAGE MECHANICAL DATA SOT323-6L DIMENSIONS REF. A D A A2 A1 Millimeters Min. 0.8 0 0.8 0.15 0.1 1.8 1.15 1.8 0.1 Max. 1.1 0.1 1 0.3 0.18 2.2 1.35 2.4 0.4 Inches Min. 0.031 0 0.031 0.006 0.004 0.071 0.045 0.071 0.004 Max. 0.043 0.004 0.039 0.012 0.007 0.086 0.053 0.094 0.016 A1 e e A2 b c D HE E E e HE 0.65 Typ. 0.025 Typ. Q1 c b Q1 FOOTPRINT DIMENSIONS (millimeters) 0.3mm 1mm 2.9mm 1mm 0.35mm MARKING Type BAS70-07S BAS70-08S s Marking D32 Package SOT323-6L Weight 0.006g Base qty 3000 Delivery mode Tape & reel D33 Epoxy meets UL94, V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2001 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4
BAS70-07S 价格&库存

很抱歉,暂时无法提供与“BAS70-07S”相匹配的价格&库存,您可以联系我们找货

免费人工找货