BDW94C

® BDW93C BDW94B/BDW94C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s s s STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BDW93C is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. It is intented for use in power linear and switching applications. The complementary PNP type is BDW94C. Also BDW94B is a PNP type. 1 2 3 TO-220 I NTERNAL SCHEMATIC DIAGRAM R1 Typ. = 10 KΩ R2 Typ. = 150 Ω ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V CBO V CEO IC ICM IB P tot Ts tg Tj Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Collector Current Collector Peak Current Base Current T otal Dissipation at Tc ≤ 25 C Storage Temperature o Value BDW93C BDW94B 80 80 12 15 0.2 80 -65 to 150 150 BDW94C 100 100 Un it V V A A A W o o C C Max. Operating Junction Temperature For PNP types voltage and current values are negative. October 1999 1/6 BDW93C/BDW94B/BDW94C THERMAL DATA R thj -case Thermal Resistance Junction-case 1.56 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbo l I CBO Parameter Collector Cut-off Current (IE = 0) Test Con ditions for BDW94B for BDW93C/94C T case = 150 o C for BDW94B for BDW93C/94C for BDW94B for BDW93C/94C V EB = 5 V I C = 100 mA for BDW94B for BDW 93C/94C IC = 5 A I C = 10 A IC = 5 A I C = 10 A IC = 3 A IC = 5 A I C = 10 A IF = 5 A I F = 10 A IC = 1 A f = 1 MHz V CE = 10 V 20 I B = 20 mA I B = 100 mA I B = 20 mA I B = 100 mA V CE = 3 V V CE = 3 V V CE = 3 V 1000 750 100 1.3 1.8 V CB = 80 V VCB = 100 V V CB = 80 V VCB = 100 V V CE = 80 V VCE = 100 V Min. Typ. Max. 100 100 5 5 1 1 2 Unit µA µA mA mA mA mA mA I CEO IEBO Collector Cut-off Current (IB = 0) Emitter Cut-off Current (I C = 0) V CEO(s us) ∗ Collector-Emitt er Sustaining Voltage (I B = 0) V CE(sat) ∗ V BE(sat) ∗ h FE∗ Collector-Emitt er Saturation Voltage Base-Emitter Saturation Voltage DC Current G ain 80 100 2 3 2.5 4 20K 2 4 V V V V V V VF * h fe Parallel-diode Forward Voltage Small Signal Current Gain V V ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % For PNP types voltage and current values are negative. 2/6 BDW93C/BDW94B/BDW94C Safe Operating Area DC Current Gain (NPN types) Collector Emitter Saturation Voltage (NPN types) DC Transconductance(NPN types) Collector Emitter Saturation Voltage (NPN types) Collector Emitter Saturation Voltage (PNP types) 3/6 BDW93C/BDW94B/BDW94C Saturated Switching Characteristics (NPN types) Saturated Switching Characteristics (PNP types) Collector Emitter Saturation Voltage (PNP types) DC Current Gain (PNP types) DC Transconductance(PNP types) 4/6 BDW93C/BDW94B/BDW94C TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107 P011C 5/6 BDW93C/BDW94B/BDW94C Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com . 6/6