BDX53C

® BDX53B / BDX53C BDX54B / BDX54C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s STMicroelectronics PREFERRED SALESTYPES APPLICATIONS s AUDIO AMPLIFIERS s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BDX53B and BDX53C are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use in hammer drivers, audio amplifiers and other medium power linear and switching applications. The complementary PNP types are BDX54B and BDX54C respectively. 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 10 KΩ R2 Typ. = 150 Ω ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V CBO V CEO VEBO IC ICM IB P tot Ts tg Tj Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Emitter-base Voltage (IC = 0) Collector Current Collector Peak Current (repetitive) Base Current T otal Dissipation at Tc ≤ 2 5 C o Value BDX53B BDX54B 80 80 5 8 12 0.2 60 -65 to 150 150 BDX53C BDX54C 100 100 Un it V V V A A A W o o Storage Temperature Max. Operating Junction Temperature C C For PNP types voltage and current values are negative. September 1999 1/6 BDX53B - BDX53C - BDX54B - BDX54C THERMAL DATA R thj -case R thj -amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 2.08 70 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbo l I CBO I CEO IEBO Parameter Collector Cut-off Current (IE = 0) Collector Cut-off Current (IB = 0) Emitter Cut-off Current (I C = 0) Test Con ditions for BDX53B/54B for BDX53C/54C for BDX53B/54B for BDX53C/54C V EB = 5 V I C = 100 mA for BDX53B/54B for BDX53C/54C I B =12 mA I B =12 mA V CE = 3 V 750 1.8 2.5 2.5 V V 80 100 2 2.5 VCB = 80 V V CB = 100V V CE = 40 V V CE = 50V Min. T yp. Max. 0.2 0.2 0.5 0.5 2 Unit mA mA mA mA mA V V V V V CEO(s us) ∗ Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat) ∗ V BE(sat) ∗ h F E∗ VF ∗ Collector-emitter Saturation Voltage Base-emitter Saturation Voltage DC Current Gain IC = 3 A IC = 3 A IC = 3 A Parallel-diode Forward I F = 3 A Voltage IF = 8 A ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % For PNP types voltage and current values are negative. Safe Operating Area Derating Curve 2/6 BDX53B - BDX53C - BDX54B - BDX54C DC Current Gain (NPN type) DC Current Gain (PNP type) Collector Emitter Saturation Voltage (NPN type) Collector Emitter Saturation Voltage (PNP type) Base Emitter Saturation Voltage (NPN type) Base Emitter Saturation Voltage (PNP type) 3/6 BDX53B - BDX53C - BDX54B - BDX54C Base Emitter On Voltage (NPN type) Base Emitter On Voltage (PNP type) Freewheel Diode Forward Voltage (NPN type) Freewheel Diode Forward Voltage (PNP type) Switching Time Resistive Load (NPN type) Switching Time resistive Load (PNP type) 4/6 BDX53B - BDX53C - BDX54B - BDX54C TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107 P011C 5/6 BDX53B - BDX53C - BDX54B - BDX54C Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com . 6/6