BDX87C

BDX87C BDX88C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BDX87C is a silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power linear and switching applications. The complementary PNP types is the BDX88C. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 6 K Ω R2 Typ. = 55 Ω ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP Value BDX87C BDX88C 100 100 5 12 18 0.2 o Unit V CBO V CEO V EBO IC I CM IB P tot T stg Tj June 1997 Collector-base Voltage (I E = 0 ) Collector-emitter Voltage (I B = 0 ) Emitter-base Voltage (I C = 0 ) Collector Current Collector Peak Current (repetitive) Base Current Total Dissipation at T c ≤ 2 5 C Storage Temperature Max. Operating Junction Temperature V V V A A A W o o 120 -65 to 200 200 C C 1/4 BDX87C-BDX88C THERMAL DATA R thj-case Thermal Resistance Junction-case Max 1.45 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO I CEO I EBO Parameter Collector Cut-off Current (I E = 0 ) Collector Cut-off Current (I B = 0 ) Emitter Cut-off Current (I C = 0 ) Test Conditions V CB = 1 00 V V CB = 1 00 V V CB = 5 0 V V EB = 5 V I C = 1 00 mA T c ase Min. = 1 50 o C Typ. Max. 0.5 5 1 1 Unit mA mA mA mA V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0 ) V CE(sat) ∗ V BE(sat) ∗ V BE ∗ h FE ∗ Collector-emitter Saturation Voltage Base-emitter Saturation Voltage Base-emitter Voltage DC Current Gain 100 IC = 6 A IC = 12 A IC = 12 A IC = 6 A IC = 5 A IC = 6 A IC = 12 A IF = 3 A IF = 8 A IC = 5 A f = 1MHz I B = 2 4 mA I B = 1 20 mA I B = 120 mA V CE = 3 V V CE = 3 V V CE = 3 V V CE = 3 V 1000 750 100 2 .5 V CE = 3 V 25 2 3 4 2.8 18000 1.8 V V V V VF∗ hfe ∗ Parallel-diode Forward Voltage Small SignalCurrent Gain V V ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % For PNP types voltage and current values are negative. 2/4 BDX87C-BDX88C TO-3 MECHANICAL DATA mm MIN. A B C D E G N P R U V 11.00 0.97 1.50 8.32 19.00 10.70 16.50 25.00 4.00 38.50 30.00 TYP. MAX. 13.10 1.15 1.65 8.92 20.00 11.10 17.20 26.00 4.09 39.30 30.30 MIN. 0.433 0.038 0.059 0.327 0.748 0.421 0.649 0.984 0.157 1.515 1.187 inch TYP. MAX. 0.516 0.045 0.065 0.351 0.787 0.437 0.677 1.023 0.161 1.547 1.193 DIM. P G A D C U V O N R B P003F 3/4 E BDX87C-BDX88C Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4