BFY50

BFY50/51 MEDIUM POWER AMPLIFIER DESCRIPTION The BFY50 and BFY52 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are intended for general purpose linear and switching applications. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM P t ot T stg Tj Parameter BFY50 Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (tp < 5 ms) Total Dissipation at T amb ≤ 25 C at T case ≤ 25 o C St orage Temperature Max. Operating Junction Temperature o Value BFY51 60 30 6 1 1.5 0.8 5 -65 to 200 200 80 35 Unit V V V A A W W o o C C 1/5 November 1997 BFY50/BFY51 THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 35 218 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CBO Parameter Collector Cut-off Current (IE = 0) Test Cond ition s for BFY50 V CB = 60 V V CB = 60 V for BFY51 V CB = 40 V V CB = 40 V V EB = 5 V V EB = 5 V I C = 100 µA for BFY50 for BFY51 I C = 30 mA for BFY50 for BFY51 I C = 100 µA Min. Typ . Max. 50 2.5 50 2.5 50 2.5 80 60 35 30 6 Un it nA µA nA µA nA µA V V V V V T ca s e = 100 C o o T ca s e = 100 C T case = 100 oC I EBO V (BR)CBO Emitter Cut-off Current (I C = 0) Collector-Base Breakdown Voltage (IE = 0) V ( BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage V CE(sat )∗ I C = 150 mA for BFY50 for BFY51 IC = 1 A for BFY50 for BFY51 I C = 150 mA IC = 1 A for BFY50 I C = 10 mA I C = 150 mA I C = 1A for BFY51 I C = 10 mA I C = 150 mA I C = 1A V CE = 6 V I C = 1 mA for BFY50 for BFY51 I C = 10 mA for BFY50 for BFY51 I C = 50 mA for BFY50 for BFY51 IE = 0 I B = 15 mA 0.14 0.14 I B = 0.1 A 0.7 0.7 I B = 15 mA I B = 0.1 A V CE = 10 V V CE = 10 V V CE = 10 V V CE = 10 V V CE = 10 V V CE = 10 V f = 1KHz 25 30 45 60 VCE = 10 V 60 50 f = 1MHz 100 110 10 MHz MHz pF 20 30 15 30 40 15 0.95 1.5 40 55 30 55 70 40 1 1.6 1.3 2 V V V V 0.2 0.35 V V V BE(s at)∗ h FE∗ Base-Emitter Saturation Voltage DC Current G ain hfe ∗ Small Signal Current Gain fT Transition F requency C CBO Collector Base Capacitance V CB = 10 V ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 % 2/5 BFY50/BFY51 ELECTRICAL CHARACTERISTICS (continued) Symb ol hie Parameter Input Impedance Test Cond ition s I C = 10 mA for BFY50 for BFY51 I C = 10 mA for BFY50 for BFY51 I C = 10 mA for BFY50 for BFY51 I C = 150 mA I B1 = 15 mA I C = 150 mA I B1 = 15 mA VCE = 5 V f = 1KHz 180 220 VCE = 5 V f = 1KHz 55 70 VCE = 5 V f = 1KHz 30 35 VCC = 10 V V BE = -2 V VCC = 10 V V BE = -2 V 15 40 300 60 Min. Typ . Max. Un it Ω Ω 10 10 -6 µS µS ns ns ns ns -6 hre Reverse Voltage Ratio h oe Output Admittance td tr ts tf Delay Time Rise Time Storage Time Fall T ime I C = 150 mA VCC = 10 V I B1 = -IB2 = 15 mA I C = 150 mA VCC = 10 V I B1 = -IB2 = 15 mA ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 % 3/5 BFY50/BFY51 TO-39 MECHANICAL DATA mm DIM. MIN. A B D E F G H I L 5.08 1.2 0.9 45o (typ.) 12.7 0.49 6.6 8.5 9.4 0.200 0.047 0.035 TYP. MAX. MIN. 0.500 0.019 0.260 0.334 0.370 TYP. MAX. inch D G I H E F A L B P008B 4/5 BFY50/BFY51 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersede and replaces all information previously supplied. s SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 5/5