BTA06GP

B TA06 GP TRIACS . . . . FEATURES LOW IH = 13mA max HIGH SURGE CURRENT : ITSM = 100A IGT SPECIFIED IN FOUR QUADRANTS INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734) DESCRIPTION The BTA06 GP’s use high performance, glass passivated chips. The insulated TO220AB package, the high surge current and low holding current make this family well adapted to LIGHT DIMMER applications. ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) ITSM RMS on-state current (360° conduction angle) Non repetitive surge peak on-state current ( Tj initial = 25°C ) I2 t value Critical rate of rise of on-state current Gate supply : IG = 500mA diG/dt = 1A/µs Parameter A1 A2 G TO220AB (Plastic) Value Tc = 105 °C tp = 8.3 ms tp = 10 ms tp = 10 ms Repetitive F = 50 Hz Non Repetitive 6 105 100 50 10 50 - 40 to + 150 - 40 to + 125 260 Unit A A I2t dI/dt A2s A/µs Tstg Tj Tl Storage and operating junction temperature range Maximum lead temperature for soldering during 10 s at 4.5 mm from case °C °C °C Symbol Parameter 400 GP BTA06600 GP 600 Unit VDRM VRRM Repetitive peak off-state voltage Tj = 125 °C 400 V March 1995 1/4 BTA06 GP THERMAL RESISTANCES Symbol Rth (j-a) Junction to ambient Parameter Value 60 4 3 Unit °C/W °C/W °C/W Rth (j-c) DC Junction to case for DC Rth (j-c) AC Junction to case for 360 ° conduction angle ( F= 50 Hz) GATE CHARACTERISTICS (maximum values) PG (AV) = 1W PGM = 10W (tp = 20 µs) IGM = 4A (tp = 20 µs) VGM = 16V (tp = 20 µs). ELECTRICAL CHARACTERISTICS Symbol Test Conditions Quadrant Suffix GP IGT VD=12V (DC) RL=33Ω Tj=25°C I-II-III IV VGT VGD tgt VD=12V (DC) RL=33Ω Tj=25°C Tj=110°C Tj=25°C Tj=25°C I-II-III-IV I-II-III-IV I-II-III-IV MAX MAX MAX MIN TYP 50 75 1.5 0.2 2 V V µs mA mA Unit VD=VDRM RL=3.3kΩ VD=VDRM IG = 500mA dIG/dt = 3A/µs IG=1.2 IGT IL I-III- IV II TYP 20 40 IH * VTM * IDRM IRRM dV/dt * IT= 100mA gate open ITM = 8.5A tp= 380µs VDRM VRRM Rated Rated Tj=25°C Tj=25°C Tj=25°C Tj=110°C Tj=110°C MAX MAX MAX MAX MIN TYP 13 1.4 0.01 0.5 30 100 1 10 mA V mA Linear slope up to VD=67%VDRM gate open (dI/dt)c= 1.8A/ms V/µs (dV/dt)c * Tj=110°C MIN TYP V/µs * For either polarity of electrode A2 voltage with reference to electrode A1. 2/4 BTA06 GP Fig.1 : Maximum RMS power dissipation versus RMS on-state current (F=50Hz). (curves are cut off by (dI/dt)c limitation) Fig.2 : Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact. P (W) 180 O P(W) Tcase (o C) 7 6 5 4 3 2 1 0 0 1 7 -105 = 180 = 120 = 90 = 60 = 30 o o o o o 6 5 4 3 2 Rth = 0 o C/W o 2.5 C/W o 5 C/W 10 o C/W -110 -115 -120 Tamb ( C) o I T(RMS) (A) 2 3 4 5 6 1 0 0 20 40 60 80 100 120 -125 140 Fig.3 : RMS on-state current versus case temperature. Fig.4 : Relative variation of thermal impedance versus pulse duration. Zth/Rth 1 I T(RMS) (A) 7 6 Zt h( j-c) 5 4 3 = 180 o 0.1 Zt h( j-a) 2 1 0 0 Tcase ( C) 10 20 30 40 50 60 70 80 90 100 110 120 130 0.01 1E-3 1E-2 1E-1 1E +0 1 E +1 o tp (s) 1E +2 5 E+2 Fig.5 : Relative variation of gate trigger current and holding current versus junction temperature. Fig.6 : Non Repetitive surge peak on-state current versus number of cycles. 3/4 BTA06 GP F ig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : t ≤ 10ms, and corresponding value of I2t. Fig.8 : On-state characteristics (maximum values). PACKAGE MECHANICAL DATA TO220AB Plastic REF. A G I D B J H F O P L C M = N= A B C D F G H I J L M N O P DIMENSIONS Millimeters Inches Min. Max. Min. Max. 10.20 10.50 0.401 0.413 14.23 15.87 0.560 0.625 12.70 14.70 0.500 0.579 5.85 6.85 0.230 0.270 4.50 0.178 2.54 3.00 0.100 0.119 4.48 4.82 0.176 0.190 3.55 4.00 0.140 0.158 1.15 1.39 0.045 0.055 0.35 0.65 0.013 0.026 2.10 2.70 0.082 0.107 4.58 5.58 0.18 0.22 0.80 1.20 0.031 0.048 0.64 0.96 0.025 0.038 Cooling method : C Marking : type number Weight : 2.3 g Recommended torque value : 0.8 m.N. Maximum torque value : 1 m.N. Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-TH OMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. © 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. 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