®
BTA/BTB12 and T12 Series
12A TRIACS
SNUBBERLESS™, LOGIC LEVEL & STANDARD
MAIN FEATURES:
Symbol IT(RMS) VDRM/VRRM IGT (Q ) 1 Value 12 600 and 800 5 to 50 Unit A V mA
A1
G
A2
A1
A2
DESCRIPTION Available either in through-hole or surface-mount packages, the BTA/BTB12 and T12 triac series is suitable for general purpose AC switching. They can be used as an ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits... or for phase control operation in light dimmers, motor speed controllers,... The snubberless versions (BTA/BTB...W and T12 series) are specially recommended for use on inductive loads, thanks to their high commutation performances. Logic level versions are designed to interface directly with low power drivers such as microcontrollers. By using an internal ceramic pad, the BTA series provides voltage insulated tab (rated at 2500V RMS) complying with UL standards (File ref.: E81734) ABSOLUTE MAXIMUM RATINGS
Symbol IT(RMS) Parameter RMS on-state current (full sine wave)
A2 G
D2PAK (T12-G)
A2
A1 A2 G
A1 A2 G
TO-220AB Insulated (BTA12)
TO-220AB (BTB12)
Value Tc = 105°C 12 Tc = 90°C t = 20 ms t = 16.7 ms 120 126 78 Tj = 125°C Tj = 25°C Tj = 125°C Tj = 125°C 50 VDRM/VRRM
+ 100
Unit A A
D²PAK/TO-220AB TO-220AB Ins.
ITSM
Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) I²t Value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns
F = 50 Hz F = 60 Hz
I ²t dI/dt
tp = 10 ms F = 120 Hz tp = 10 ms tp = 20 µs
A² s A/µs V A W °C 1/7
VDSM/VRSM Non repetitive surge peak off-state voltage IGM PG(AV) Tstg Tj Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range
4 1 - 40 to + 150 - 40 to + 125
September 2002 - Ed: 6A
BTA/BTB12 and T12 Series
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
s
SNUBBERLESS™ and LOGIC LEVEL (3 Quadrants)
Symbol Test Conditions Quadrant T12 T1235 IGT (1) VGT VGD IH (2) IL dV/dt (2) VD = 12 V RL = 30 Ω I - II - III I - II - III I - II - III MAX. MAX. MIN. MAX. I - III II VD = 67 %VDRM gate open Tj = 125°C Tj = 125°C Tj = 125°C Tj = 125°C (dV/dt)c = 10 V/µs Without snubber MIN. MIN. MAX. 35 50 60 500 6.5 10 10 15 20 3.5 1 35 TW 5 SW 10 1.3 0.2 15 25 30 40 6.5 2.9 35 50 60 500 6.5 50 70 80 1000 12 V/µs A/ms BTA/BTB12 CW 35 BW 50 mA V V mA mA Unit
VD = VDRM RL = 3.3 kΩ Tj = 125°C IT = 100 mA IG = 1.2 IGT
(dI/dt)c (2) (dV/dt)c = 0.1 V/µs
s
STANDARD (4 Quadrants)
Symbol Test Conditions Quadrant BTA/BTB12 C IGT (1) VD = 12 V VGT VGD IH (2) IL dV/dt (2) VD = VDRM RL = 3.3 kΩ Tj = 125°C IT = 500 mA IG = 1.2 IGT VD = 67 %VDRM gate open Tj = 125°C Tj = 125°C I - III - IV II MIN. MIN. (dV/dt)c (2) (dI/dt)c = 5.3 A/ms RL = 30 Ω I - II - III IV ALL ALL MAX. MAX. MIN. MAX. MAX. 25 40 80 200 5 25 50 1.3 0.2 50 50 100 400 10 V/µs V/µs B 50 100 mA V V mA mA Unit
STATIC CHARACTERISTICS
Symbol VT (2) Vto (2) Rd (2) IDRM IRRM
Note 1: minimum IGT is guaranted at 5% of IGT max. Note 2: for both polarities of A2 referenced to A1
Test Conditions ITM = 17 A tp = 380 µs Tj = 25°C Tj = 125°C Tj = 125°C Tj = 25°C Tj = 125°C MAX. MAX. MAX. MAX.
Value 1.55 0.85 35 5 1
Unit V V mΩ µA mA
Threshold voltage Dynamic resistance VDRM = VRRM
2/7
BTA/BTB12 and T12 Series
THERMAL RESISTANCES
Symbol Rth(j-c) Rth(j-a) Junction to case (AC) Parameter D²PAK/TO-220AB TO-220AB Insulated Junction to ambient S=1 cm² D²PAK TO-220AB TO-220AB Insulated
S = Copper surface under tab
Value 1.4 2.3 45 60
Unit °C/W
°C/W
PRODUCT SELECTOR
Voltage (xxx) Part Number 600 V BTA/BTB12-xxxB BTA/BTB12-xxxBW BTA/BTB12-xxxC BTA/BTB12-xxxCW BTA/BTB12-xxxSW BTA/BTB12-xxxTW T1235-xxxG
BTB: non insulated TO-220AB package
Sensitivity 800 V X X X X X X X 50 mA 50 mA 25 mA 35 mA 10 mA 5 mA 35 mA X X X X X X X
Type Standard Snubberless Standard Snubberless Logic level Logic Level Snubberless
Package TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB D²PAK
ORDERING INFORMATION
BT A 12 TRIAC SERIES INSULATION: A: insulated B: non insulated CURRENT: 12A
600
BW
(RG)
PACKING MODE Blank: Bulk RG: Tube
VOLTAGE: 600: 600V 800: 800V
SENSITIVITY & TYPE B: 50mA STANDARD BW: 50mA SNUBBERLESS C: 25mA STANDARD CW: 35mA SNUBBERLESS SW: 10mA LOGIC LEVEL TW: 5mA LOGIC LEVEL
T 12 35
TRIAC SERIES CURRENT: 12A
-
600 G
PACKAGE: G: D2PAK
(-TR)
VOLTAGE: 600: 600V 800: 800V SENSITIVITY: 35: 35mA
PACKING MODE: Blank: Tube -TR: Tape & Reel
3/7
BTA/BTB12 and T12 Series
OTHER INFORMATION
Part Number BTA/BTB12-xxxyz BTA/BTB12-xxxyzRG T1235-xxxG T1235-xxxG-TR Marking BTA/BTB12-xxxyz BTA/BTB12-xxxyz T1235xxxG T1235xxxG Weight 2.3 g 2.3 g 1.5 g 1.5 g Base quantity 250 50 50 1000 Packing mode Bulk Tube Tube Tape & reel
Note: x xx = voltage, yy = sensitivity, z = type
Fig. 1: Maximum power dissipation versus RMS on-state current (full cycle).
P (W) 16 14 12 10 8 6 4 2 0 0 1 2 3 4
IT(RMS)(A)
Fig. 2-1: RMS on-state current versus case temperature (full cycle).
IT(RMS) (A) 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0
BTB/T12
BTA
Tc(°C)
5
6
7
8
9
10 11 12
0
25
50
75
100
125
Fig. 2-2: RMS on-state current versus ambient temperature (printed circuit board FR4, copper thickness: 35µm),full cycle.
IT(RMS) (A) 3.5 3.0 2.5 2.0
D2PAK (S=1cm2)
Fig. 3: Relative variation of thermal impedance versus pulse duration.
K=[Zth/Rth] 1E+0
Zth(j-c)
1E-1
Zth(j-a)
1.5 1.0 0.5 0.0 0 25 Tamb(°C) 50 75 100 125
1E-2 1E-3 1E-2 1E-1
tp(s)
1E+0 1E+1 1E+2 5E+2
4/7
BTA/BTB12 and T12 Series
Fig. 4: values).
ITM (A) 100
On-state characteristics (maximum
Fig. 5: Surge peak on-state current versus number of cycles.
ITSM (A) 130 120 110 100 90 80 70 60 50 40 30 20 10 0
t=20ms
Tj max
Non repetitive Tj initial=25°C
One cycle
10
Tj=25°C Tj max. Vto = 0.85 V Rd = 35 mΩ
Repetitive Tc=90°C
VTM(V)
Number of cycles
1 0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
1
10
100
1000
Fig. 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms, and corresponding value of I²t.
ITSM (A), I²t (A²s) 1000
dI/dt limitation: 50A/µs Tj initial=25°C
Fig. 7: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values).
IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25°C] 2.5 2.0
IGT
ITSM
1.5
100
I²t
IH & IL
1.0 0.5
Tj(°C)
tp (ms) 10 0.01 0.10 1.00 10.00
0.0 -40
-20
0
20
40
60
80
100
120
140
Fig. 8-1: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values) (BW/CW/T1235).
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 2.8 2.4 2.0
C SW
Fig. 8-2: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values) (TW).
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 5.0 4.5 4.0 3.5 3.0 2.5
TW
1.6 1.2 0.8 0.4
B BW/CW/T1235
2.0 1.5 1.0 0.5
(dV/dt)c (V/µs)
(dV/dt)c (V/µs)
1.0 10.0 100.0
0.0 0.1
1.0
10.0
100.0
0.0 0.1
5/7
BTA/BTB12 and T12 Series
Fig. 9: Relative variation of critical rate of decrease of main current versus junction temperature.
(dI/dt)c [Tj] / (dI/dt)c [Tj specified] 6 5 4 3 2 1 0 0 25 50 Tj (°C) 75 100 125
Fig. 10: D²PAK Thermal resistance junction to ambient versus copper surface under tab (printed circuit board FR4, copper thickness: 35 µm).
Rth(j-a) (°C/W) 80
D²PAK
70 60 50 40 30 20 10 0 0 4 8 12 16 S(cm²) 20 24 28 32 36 40
PACKAGE MECHANICAL DATA D²PAK (Plastic)
DIMENSIONS
A E L2 C2
REF.
Millimeters Min. Typ. Max. 4.60 2.69 0.23 0.93 Min.
Inches Typ. Max.
D L L3 A1 B2 B G A2 2.0 MIN. FLAT ZONE V2 C R
A A1 A2 B B2 C C2 D E G L L2 L3 R V2
4.30 2.49 0.03 0.70 1.25 0.45 1.21 8.95 10.00 4.88 15.00 1.27 1.40 0°
1.40
0.40
0.169 0.181 0.098 0.106 0.001 0.009 0.027 0.037 0.048 0.055 0.60 0.017 0.024 1.36 0.047 0.054 9.35 0.352 0.368 10.28 0.393 0.405 5.28 0.192 0.208 15.85 0.590 0.624 1.40 0.050 0.055 1.75 0.055 0.069 0.016 8° 0° 8°
FOOTPRINT DIMENSIONS (in millimeters) D²PAK (Plastic)
16.90
10.30 1.30
5.08
3.70 8.90
6/7
BTA/BTB12 and T12 Series
PACKAGE MECHANICAL DATA TO-220AB / TO-220AB Ins.
DIMENSIONS
B C
REF.
Millimeters Min. Typ. Max. Min.
Inches Typ. Max. 0.625
b2
L F I A
l4
a1
c2
l3
l2 a2
b1 e
M c1
A a1 a2 B b1 b2 C c1 c2 e F I I4 L l2 l3 M
15.20
15.90 0.598
3.75 0.147 13.00 14.00 0.511 0.551 10.00 10.40 0.393 0.409 0.61 0.88 0.024 0.034 1.23 1.32 0.048 0.051 4.40 4.60 0.173 0.181 0.49 0.70 0.019 0.027 2.40 2.72 0.094 0.107 2.40 2.70 0.094 0.106 6.20 6.60 0.244 0.259 3.75 3.85 0.147 0.151 15.80 16.40 16.80 0.622 0.646 0.661 2.65 2.95 0.104 0.116 1.14 1.70 0.044 0.066 1.14 1.70 0.044 0.066 2.60 0.102
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Isreal - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com
7/7
很抱歉,暂时无法提供与“BTA12-800CW”相匹配的价格&库存,您可以联系我们找货
免费人工找货- 国内价格
- 1+1.5225
- 30+1.47
- 100+1.365
- 500+1.26
- 1000+1.2075