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BTB04-600A

BTB04-600A

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

  • 描述:

    BTB04-600A - SENSITIVE GATE TRIACS - STMicroelectronics

  • 数据手册
  • 价格&库存
BTB04-600A 数据手册
® BTA04 T/D/S/A BTB04 T/D/S/A SENSITIVE GATE TRIACS A2 FEATURES Very low IGT = 10mA max Low IH = 15mA max BTA Family: Insulating voltage = 2500V(RMS) (UL recognized: E81734) s s s G A1 DESCRIPTION The BTA/BTB04 T/D/S/A triac family are high performance glass passivated PNPN devices. These parts are suitables for general purpose applications where gate high sensitivity is required. Application on 4Q such as phase control and static switching. A1 A2 G TO-220AB ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) ITSM I2t dI/dt Parameter RMS on-state current (360° conduction angle) Non repetitive surge peak on-state current (Tj initial = 25°C) I2t value Critical rate of rise of on-state current Gate supply: IG = 50mA dIG/dt = 0.1A/µs Storage and operating junction temperature range Maximum lead soldering temperature during 10s at 4.5mm from case BTA BTB Tc = 90°C Tc = 95°C tp = 8.3ms tp = 10ms tp = 10ms Repetitive F = 50Hz Non repetitive Tstg Tj Tl 42 40 8 10 50 -40 to +150 -40 to +110 260 °C °C A2s A/µs A Value 4 Unit A BTA / BTB04Symbol VDRM VRRM Parameter 400 T/D/S/A 600 T/D/S/A 600 700 T/D/S/A 700 V Unit 400 Repetitive peak off-state voltage Tj = 110°C September 2001 - Ed: 1A 1/6 BTA04 T/D/S/A BTB04 T/D/S/A THERMAL RESISTANCE Symbol Rth (j-a) Rth (j-c) DC Rth (j-c) AC Junction to ambient Junction to case for DC Junction to case for 360° conduction angle (F = 50Hz) BTA BTB BTA BTB Parameter Value 60 4.4 3.2 3.3 2.4 °C/W Unit °C/W °C/W GATE CHARACTERISTICS (maximum values) PG(AV) = 1W PGM = 40W (tp = 20µs) IGM = 4A (tp = 20µs) VGM = 16V (tp = 20µs) ELECTRICAL CHARACTERISTICS BTA / BTB04 Symbol IGT Test conditions VD = 12V (DC) RL = 33Ω Tj = 25°C Quadrant T I - II - III IV VGT VGD tgt IL VD = 12V (DC) VD = VDRM RL = 33Ω RL = 3.3kΩ Tj = 25°C Tj =110°C Tj = 25°C Tj = 25°C I - II - III - IV I - II - III - IV I - II - III - IV I - III - IV II IH* VTM * IDRM IRRM dV/dt * IT = 100mA Gate open ITM = 5.5A VDRM rated VRRM rated Linear slope up to VD = 67% VDRM gate open (dI/dt)c = 1.8A/ms tp = 380µs Tj = 25°C Tj = 25°C Tj = 25°C Tj = 110°C Tj = 110°C MAX. MAX. MAX. MAX. TYP. MIN. (dI/dt)c* Tj = 110°C TYP. 10 1 10 1 MAX. MAX. MAX. MIN. TYP. TYP. 10 20 15 10 20 15 1.65 0.01 0.75 10 5 10 5 V/µs V/µs 5 5 D 5 10 1.5 0.2 2 20 40 25 20 40 25 mA V mA S 10 10 A 10 25 V V µs mA mA Unit VD = VDRM IG = 40mA dIG/dt = 0.5A/µs IG = 1.2IGT * For either polarity of electrode A2 voltage with reference to electrode A1 2/6 BTA04 T/D/S/A PRODUCT INFORMATION IT(RMS) Package A BTA (Insulated) 4 V 400 600 700 BTB (Uninsulated) 400 600 T X X X X X X X X X D S VDRM / VRRM BTB04 T/D/S/A Sensitivity Specification A X ORDERING INFORMATION BT Triac Series Insulation: A: insulated B: non insulated Current: 04A A 04 - 400 T Sensitivity Voltage: 400: 400V 600: 600V 700: 700V 3/6 BTA04 T/D/S/A BTB04 T/D/S/A Fig. 2: Correlation between maximum RMS power dissipation and maximum allowable temperature (Tamb and Tcase) for different thermal resistances heatsink + contact (BTA). Fig. 1: Maximum RMS power dissipation versus RMS on-state current (F = 50Hz).(Curves are cut off by (dI/dt)c limitation) Fig. 3: Correlation between maximum RMS power dissipation and maximum allowable temperature (Tamb and Tcase) for different thermal resistances heatsink + contact (BTB). Fig. 4: RMS on-state current versus case temperature. Fig. 5: Relative variation of thermal impedance versus pulse duration. Zth/Rth 1 Fig. 6: Relative variation of gate trigger current and holding current versus junction temperature. Zth(j-c) 0.1 Zth(j-a) tp(s) 0.01 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 4/6 BTA04 T/D/S/A Fig. 7: Non repetitive surge peak on-state current versus number of cycles. BTB04 T/D/S/A Fig. 8: Non repetitive surge peak on-state current for a sinusoidal pulse with width: t ≤ 10ms, and corresponding value of I2t. Fig. 9: On-state characteristics (maximum values). 5/6 BTA04 T/D/S/A BTB04 T/D/S/A PACKAGE MECHANICAL DATA TO-220AB (Plastic) DIMENSIONS REF. B C Millimeters 15.20 3.75 13.00 10.00 0.61 1.23 4.40 0.49 2.40 2.40 6.20 3.75 2.65 1.14 1.14 2.60 14.00 0.511 10.40 0.393 0.88 0.024 1.32 0.048 4.60 0.173 0.70 0.019 2.72 0.094 2.70 0.094 6.60 0.244 3.85 0.147 2.95 0.104 1.70 0.044 1.70 0.044 15.90 0.598 Inches 0.625 0.147 0.551 0.409 0.034 0.051 0.181 0.027 0.107 0.106 0.259 0.151 0.116 0.066 0.066 0.102 Min. Typ. Max. Min. Typ. Max. A a1 F b2 L a2 B b1 b2 C c1 I A l4 a1 c2 c2 e F I I4 L c1 l3 l2 a2 15.80 16.40 16.80 0.622 0.646 0.661 b1 e M l2 l3 M OTHER INFORMATION Ordering type BTA/BTB04-xxxy s s s s Marking BTA/BTB04-xxxy Package TO-220AB Weight 2.3 g Base qty 250 Delivery mode Bulk Epoxy meets UL94,V0 Cooling method: C Recommended torque value: 0.8 m.N. Maximum torque value: 1 m.N. Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2001 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 6/6
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