BTW69-1200

® BTW67 and BTW69 Series 50A SCRS A STANDARD Table 1: Main Features Symbol IT(RMS) VDRM/VRRM IGT Value 50 600 to 1200 80 Unit A V mA G K A G K DESCRIPTION Available in high power packages, the BTW67 / BTW69 Series is suitable in applications where power handling and power dissipation are critical, such as solid state relays, welding equipment, high power motor control. Based on a clip assembly technology, they offer a superior performance in surge current handling capabilities. Thanks to their internal ceramic pad, they provide high voltage insulation (2500VRMS), complying with UL standards (file ref: E81734). Table 3: Absolute Ratings (limiting values) Symbol IT(RMS) IT(AV) ITSM I ²t dI/dt IGM PG(AV) Tstg Tj VRGM RMS on-state current (180° conduction angle) Average on-state current (180° conduction angle) Non repetitive surge peak on-state current I²t Value for fusing Parameter K A G RD91 (BTW67) TOP3 Ins. (BTW69) Table 2: Order Codes Part Numbers BTW67-xxx BTW69-xxxRG Marking BTW67xxx BTW69xxx Value RD91 TOP3 Ins. RD91 TOP3 Ins. tp = 8.3 ms tp = 10 ms Tc = 70°C Tc = 75°C Tc = 70°C Tc = 75°C Tj = 25°C Tj = 25°C Tj = 125°C Tj = 125°C Tj = 125°C 50 32 610 580 1680 50 8 1 - 40 to + 150 - 40 to + 125 5 REV. 5 Unit A A A A2S A/µs A W °C V 1/6 Critical rate of rise of on-state current IG = 2 F = 60 Hz x IGT , tr ≤ 100 ns Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range Maximum peak reverse gate voltage tp = 20 µs February 2006 BTW67 and BTW69 Series Tables 4: Electrical Characteristics (Tj = 25°C, unless otherwise specified) Symbol IGT VGT VGD IH IL dV/dt VTM Vt0 Rd IDRM IRRM VD = VDRM IT = 500 mA IG = 1.2 x IGT VD = 67 % VDRM Gate open ITM = 100 A tp = 380 µs Tj = 125°C Tj = 25°C Tj = 125°C Tj = 125°C Tj = 25°C Tj = 125°C RL = 3.3 kΩ Gate open Tj = 125°C Test Conditions MIN. VD = 12 V RL = 33 Ω MAX. MAX. MIN. MAX. MAX. MIN. MAX. MAX. MAX. MAX. 5 mA Value 8 80 1.3 0.2 150 200 1000 1.9 1.0 8.5 10 Unit mA V V mA mA V/µs V V mΩ µA Threshold voltage Dynamic resistance VDRM = VRRM Table 5: Thermal resistance Symbol Rth(j-c) Rth(j-a) Junction to case (D.C.) Junction to ambient (D.C.) Parameter RD91 (Insulated) TOP3 Insulated TOP3 Insulated Value 1.0 0.9 50 Unit °C/W °C/W Figure 1: Maximum average power dissipation versus average on-state current P(W) 55 50 45 40 35 30 25 20 15 10 5 0 0 5 10 15 20 25 360° α = 180° Figure 2: Average and D.C. on-state current versus case temperature IT(AV)(A) 60 50 40 α = 180° BTW69 D.C. BTW69 BTW67 30 20 10 BTW67 IT(AV)(A) α 30 35 Tcase(°C) 0 0 25 50 75 100 125 2/6 BTW67 and BTW69 Series Figure 3: Relative variation of impedance versus pulse duration thermal Figure 4: Relative variation of gate trigger current, holding current and latching current versus junction temperature IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C] 2.5 K=[Zth/Rth] 1E+0 Zth(j-c) 2.0 1E-1 1.5 Zth(j-a) BTW69 IGT 1.0 1E-2 0.5 IH & IL 1E-3 1E-3 1E-2 1E-1 tp(s) 0.0 1E+0 1E+1 1E+2 5E+2 -40 -20 0 20 Tj(°C) 40 60 80 100 120 140 Figure 5: Surge peak on-state current versus number of cycles Figure 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding values of I²t ITSM(A), I2t (A2s) 5000 Tj initial = 25°C ITSM I2t ITSM(A) 600 550 500 450 400 350 300 250 200 150 100 50 0 1 10 100 1000 Repetitive TC=75°C Non repetitive Tj initial=25°C tp=10ms One cycle 1000 dI/dt limitation Number of cycles 100 0.01 0.10 tp(ms) 1.00 10.00 Figure 7: On-state characteristics (maximum values) ITM(A) 600 Tj max.: Vt0=1.0V Rd=8.5mΩ 100 Tj=max 10 Tj=25°C VTM(V) 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 3/6 BTW67 and BTW69 Series Figure 8: Ordering Information Scheme BTW Standard SCR series Type 67 = 50A in RD91 69 = 50A in TOP3 Voltage 600 = 600V 800 = 800V 1200 = 1200V Packing mode RG = Tube Blanck = Bulk 69 - 600 RG Table 6: Product Selector Part Numbers BTW67-xxx BTW69-xxx Voltage (xxx) 600 V X X 800 V X X 1200 V X X Sensitivity 80 mA 80 mA Package RD91 TOP3 Ins. Figure 9: RD91 Package Mechanical Data A2 L2 L1 REF. A A1 A2 B B1 B2 C C1 C2 E3 F I L1 L2 N1 N2 B2 C B1 C2 A1 C1 N2 N1 B F E3 I A DIMENSIONS Millimeters Inches Min. Max. Min. Max. 40.00 1.575 29.90 30.30 1.177 1.193 22.00 0.867 27.00 1.063 13.50 16.50 0.531 0.650 24.00 0.945 14.00 0.551 3.50 0.138 1.95 3.00 0.077 0.118 0.70 0.90 0.027 0.035 4.00 4.50 0.157 0.177 11.20 13.60 0.441 0.535 3.10 3.50 0.122 0.138 1.70 1.90 0.067 0.075 33° 43° 33° 43° 28° 38° 28° 38° 4/6 BTW67 and BTW69 Series Figure 10: TOP3 Insulated Package Mechanical Data DIMENSIONS H R B A REF. A B C D Millimeters Min. Typ. Max. 4.6 Min. 0.173 4.4 1.45 14.35 0.5 2.7 15.8 20.4 15.1 5.4 3.4 4.08 1.20 4.60 Inches Typ. Max. 0.181 0.061 0.614 0.028 0.114 0.650 0.831 0.610 0.222 0.144 0.164 0.055 0.181 ØL 1.55 0.057 15.60 0.565 0.7 2.9 0.020 0.106 K G F E F G H 16.5 0.622 21.1 0.815 15.5 0.594 5.65 0.213 3.65 0.134 4.17 0.161 1.40 0.047 P C J K ØL D E J J P R In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. Table 7: Ordering Information Ordering type BTW67-xxx BTW69-xxxRG Note: xxx = voltage Marking BTW67xxx BTW69xxx Package RD91 TOP3 Ins. Weight 20 g 4.5 g Base qty 25 30 Delivery mode Bulk Tube Table 8: Revision History Date Apr-2001 13-Feb-2006 Revision 4A 5 Last update. TOP3 Insulated delivery mode changed from bulk to tube. ECOPACK statement added. Description of Changes 5/6 BTW67 and BTW69 Series Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. 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