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BU406_03

BU406_03

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

  • 描述:

    BU406_03 - SILICON NPN SWITCHING TRANSISTOR - STMicroelectronics

  • 数据手册
  • 价格&库存
BU406_03 数据手册
® BU406 SILICON NPN SWITCHING TRANSISTOR s s s STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR VERY HIGH SWITCHING SPEED s APPLICATIONS: HORIZONTAL DEFLECTION FOR MONOCHROME TV DESCRIPTION The BU406 is a silicon Epitaxial Planar NPN transistor in Jedec TO-220 plastic package. It is a fast switching device for use in horizontal deflection output stages of large screens MTV receivers with 110o CRT. 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEV V CEO V EBO IC I CM I CM IB P tot T stg Tj Parameter Collector-Base Voltage (I E = 0 ) Collector-Emitter Voltage (V BE = - 1.5 V) Collector-Emitter Voltage (I B = 0 ) Emitter-Base Voltage (I C = 0 ) Collector Current Collector Peak Current (repetitive) Collector Peak Current (t p < 1 0 ms) Base Current Total Dissipation at T c ≤ 2 5 o C Storage Temperature Max. Operating Junction Temperature Value 400 400 200 6 7 10 15 4 60 -65 to 150 150 Unit V V V V A A A A W o C o C 1/4 February 2003 BU406 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 2.08 70 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES Parameter Collector Cut-off Current (V BE = 0 ) Emitter Cut-off Current (I C = 0 ) Collector-emitter Saturation Voltage Base-emitter Saturation Voltage Transition-Frequency Turn-off Time Second Breakdown Collector Current Test Conditions V CE = 400 V V CE = 250 V V CE = 250 V V EB = 6 V IC = 5 A IC = 5 A I C = 0 .5 A IC = 5 A V CE = 4 0 V I B = 0 .5 A I B = 0 .5 A V CE = 1 0V I Bend = 0 .5 A t = 10 ms 4 10 0.75 T c = 1 50 o C Min. Typ. Max. 5 100 1 1 1 1.2 Unit mA µA mA mA V V MHz µs A I EBO V CE(sat) ∗ V BE(sat) ∗ fT t off I s/b ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2/4 BU406 TO-220 MECHANICAL DATA DIM. A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M DIA. 3.75 13.00 2.65 15.25 6.20 3.50 2.60 3.85 0.147 mm MIN. 4.40 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 10.00 16.40 14.00 2.95 15.75 6.60 3.93 0.511 0.104 0.600 0.244 0.137 0.102 0.151 TYP. MAX. 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 MIN. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.394 0.645 0.551 0.116 0.620 0.260 0.154 inch TYP. MAX. 0.181 0.052 0.107 0.027 0.034 0.067 0.067 0.202 0.106 0.409 P011CI 3/4 BU406 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2003 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4
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