BU508AW

BU508AW High voltage NPN Power transistor for standard Definition CRT display Preliminary Data Features ■ ■ ■ ■ ■ ■ ■ State-of-the-art technology: – Diffused collector “Enhanced generation” Stable performances versus operating temperature variation Low base-drive requirement Tight hFE range at operating collector current High ruggedness TO-247 semi-insulated power package In compliance with the 2002/93/EC European directive TO-247 1 2 3 Applications ■ ■ Internal schematic diagram Horizontal deflection output for CRT TV Switch mode power supplies for CRT TV Description The BU508AW is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure for updated performance to the Horizontal Deflection stage. Order codes Part Number BU508AW Marking BU508AW Package TO-247 Packaging Tube March 2007 Rev 1 1/8 www.st.com 8 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Electrical ratings BU508AW 1 Electrical ratings Table 1. Symbol VCES VCEO VEBO IC ICM IB PTOT Tstg TJ Absolute maximum rating Parameter Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Collector-base voltage (IC = 0) Collector current Collector peak current (tP < 5ms) Base current Total dissipation at Tc = 25°C Storage temperature Max. operating junction temperature Value 1500 700 9 8 15 4 125 -65 to 150 °C 150 Unit V V V A A A W Table 2. Symbol Thermal data Parameter Value 1 Unit °C/W Rthj-case Thermal resistance junction-case _______________max 2/8 BU508AW Electrical characteristics 2 Electrical characteristics (Tcase = 25°C unless otherwise specified) Table 3. Symbol ICES IEBO Electrical characteristics Parameter Collector cut-off current (VBE =0) Emitter cut-off current (IC =0) Test conditions VCE = 1500V VCE = 1500V; VEB = 9V TC= 125°C Min. Typ. Max. 0.2 2 1 Unit mA mA mA Collector-emitter VCEO(sus) (1) sustaining voltage (IC =0) VCE(sat) (1) VBE(sat) (1) hFE (1) Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain Inductive load Storage time Fall time IC = 100mA 700 V IC = 4.5A IC = 4.5A IC = 0.1A IC = 4.5A IC = 4.5A IB = 1.6A IB = 2A VCE = 5V VCE = 5V IB(on) = 0.5A 2.5 0.2 10 5 1 1.1 30 V V ts tf VBE(off) = -2.7V fh = 16KHz LBB(off) = 4.5µH µs µs 1. Pulsed: Pulse duration = 300 ms, duty cycle 1.5 % 3/8 Electrical characteristics BU508AW 2.1 Test circuits Figure 1. Power losses and inductive load switching Figure 2. Reverse biased safe operating area 4/8 BU508AW Package mechanical data 3 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 5/8 Package mechanical data BU508AW TO-247 MECHANICAL DATA mm. MIN. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 TYP MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620 DIM. A A1 b b1 b2 c D E e L L1 L2 øP øR S 6/8 BU508AW Revision history 4 Revision history Table 4. Date 02-Mar-2007 Revision history Revision 1 Initial release. Changes 7/8 BU508AW Please Read Carefully: Information in this document is provided solely in connection with ST products. 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